Intersil Corporation HFA1112-883 Datasheet

June 1994

HFA1112/883

Ultra High Speed

Programmable Gain Buffer Amplifier

Features

• This Circuit is Processed in Accordance to MIL-STD­883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.

• User Programmable For Closed-Loop Gains of +1, -1
or +2 Without Use of External Resistors

• Low Differential Gain and Phase . . . . 0.02%/0.04 Deg.

• Low Distortion (HD3, 30MHz) . . . . . . . . . . -73dBc (Typ)

• Wide -3dB Bandwidth . . . . . . . . . . . . . . . 850MHz (Typ)

• Very High Slew Rate . . . . . . . . . . . . . . . 2400V/µs (Typ)

• Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . 13ns (Typ)

• Excellent Gain Flatness (to 100MHz) . . . . 0.07dB (Typ)

• Excellent Gain Accuracy. . . . . . . . . . . . . .0.99V/V (Typ)

• High Output Current . . . . . . . . . . . . . . . . . . 60mA (Typ)

• Fast Overdrive Recovery. . . . . . . . . . . . . . . <10ns (Typ)

Applications

• Video Switching and Routing

• Pulse and Video Amplifiers

• Wideband Amplifiers

• RF/IF Signal Processing

• Flash A/D Driver

• Medical Imaging Systems

Description

The HFA1112/883 is a closed loop buffer that achieves a
high degree of gain accuracy, wide bandwidth, and low dis­tortion. Manufactured on the Intersil proprietary complemen­tary bipolar UHF-1 process, the HFA1112/883 also offers
very fast slew rates, and high output current.

A unique feature of the pinout allows the user to select a volt­age gain of +1, -1, or +2, without the use of any external
components. The result is a more flexible product, fewer part
types in inventory, and more efficient use of board space.

Component and composite video systems will also benefit
from this buffer’s performance, as indicated by the excellent
gain flatness, and 0.02%/0.04 Deg. Differential Gain/Phase
specifications (R

Compatibility with existing op amp pinouts provides flexibility
to upgrade low gain amplifiers, while decreasing component
count. Unlike most buffers, the standard pinout provides an
upgrade path should a higher closed loop gain be needed at
a future date.

This amplifier is available with programmable output clamps
as the HFA1113/883. For applications requiring a standard
buffer pinout, please refer to the HFA1110/883 datasheet.

= 150Ω).

L

Ordering Information

TEMPERATURE

PART NUMBER

HFA1112MJ/883 -55oC to +125oC 8 Lead Ceramic DIP

RANGE PACKAGE

Pinout

HFA1112/883

(CERDIP)

TOP VIEW

NC

-IN

+IN

V-

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

300

1

300

2
3
4

3-184

8

NC

-

7

+

V+

6

OUT

5

NC

Spec Number 511084-883

File Number 3610.1

Specifications HFA1112/883

Absolute Maximum Ratings Thermal Information

Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-

Output Current (50% Duty Cycle) . . . . . . . . . . . . . . . . . . . . . . . .±55mA

Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V

Storage Temperature Range . . . . . . . . . . . . . . -65oC ≤ TA≤ +150oC

Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Operating Conditions

Operating Supply Voltage (±VS) . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V

Operating Temperature Range. . . . . . . . . . . . .-55oC ≤ TA≤ +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Tested at V

D.C. PARAMETERS SYMBOL CONDITIONS

Output Offset Voltage V

Power Supply
Rejection Ratio

Non-Inverting Input
(+IN) Current

+IN Common
Mode Rejection

+IN Resistance +R

Gain
(V

= 2V

OUT

P-P

)

Gain
(V

=2V

OUT

P-P

)

Gain
(V

= 4V

OUT

P-P

)

Output Voltage
Swing

Output Voltage
Swing

SUPPLY

= ±5V, R

SOURCE

OS

PSRRP ∆V

PSRRN ∆V

I

BSP

CMS

IBP

IN

A

VP1

A

VM1

A

VP2

V

OP100

V

ON100

V

OP50

V

ON50

= 0Ω, RL = 100Ω, V

VCM = 0V 1 +25oC -25 25 mV

= ±1.25V

SUP

V+ = 6.25V, V- = -5V
V+ = 3.75V, V- = -5V

= ±1.25V

SUP

V+ = 5V, V- = -6.25V
V+ = 5V, V- = -3.75V

VCM = 0V 1 +25oC -40 40 µA

∆VCM = ±2V
V+ = 3V, V- = -7V
V+ = 7V, V- = -3V

Note 1 1 +25oC25-kΩ

AV = +1
VIN = -1V to +1V

AV = -1
VIN = -1V to +1V

AV = +2
VIN = -1V to +1V

AV = -1
RL = 100Ω

AV = -1
RL = 100Ω

AV = -1
RL = 50Ω

AV = -1
RL = 50Ω

VIN = -3.2V 1 +25oC3-V
VIN = -2.7V 2, 3 +125oC, -55oC 2.5 - V
VIN = +3.2V 1 +25oC - -3 V
VIN = +2.7V 2, 3 +125oC, -55oC - -2.5 V
VIN = -2.7V 1, 2 +25oC, +125oC 2.5 - V
VIN = -2.25V 3 -55oC 1.5 - V
VIN = +2.7V 1, 2 +25oC, +125oC - -2.5 V
VIN = +2.25V 3 -55oC - -1.5 V

Thermal Resistance θ

CerDIP Package . . . . . . . . . . . . . . . . . 115oC/W 30oC/W

Maximum Package Power Dissipation at +75oC

CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.87W

Package Power Dissipation Derating Factor above +75oC

CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8.7mW/oC

RL ≥ 50Ω

= 0V, Unless Otherwise Specified.

OUT

GROUP A

SUBGROUPS TEMPERATURE

2, 3 +125oC, -55oC -40 40 mV

1 +25oC39-dB

2, 3 +125oC, -55oC35-dB

1 +25oC39-dB

2, 3 +125oC, -55oC35-dB

2, 3 +125oC, -55oC -65 65 µA

1 +25oC-40µA/V

2, 3 +125oC, -55oC-50µA/V

2, 3 +125oC, -55oC20-kΩ

1 +25oC 0.980 1.020 V/V

2, 3 +125oC, -55oC 0.975 1.025 V/V

1 +25oC 0.980 1.020 V/V

2, 3 +125oC, -55oC 0.975 1.025 V/V

1 +25oC 1.960 2.040 V/V

2, 3 +125oC, -55oC 1.950 2.050 V/V

JA

LIMITS

θ

JC

UNITSMIN MAX

3-185

Spec Number 511084-883

Specifications HFA1112/883

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

Device Tested at V

D.C. PARAMETERS SYMBOL CONDITIONS

Output Current +I

Quiescent Power
Supply Current

NOTES:

1. Guaranteed from +IN Common Mode Rejection Test, by: +RIN = 1/CMS

2. Guaranteed from V

Table 2 Intentionally Left Blank.

SUPPLY

= ±5V, R

OUT

-I

OUT

I

CC

I

EE

Test with RL = 50Ω, by: I

OUT

= 0Ω, RL = 100Ω, V

SOURCE

Note 2 1, 2 +25oC, +125oC50 -mA

Note 2 1, 2 +25oC, +125oC - -50 mA

RL = 100Ω 1 +25oC1426mA

RL = 100Ω 1 +25oC -26 -14 mA

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

OUT

= V

= 0V, Unless Otherwise Specified.

OUT

SUBGROUPS TEMPERATURE

/50Ω.

OUT

GROUP A

LIMITS

UNITSMIN MAX

3 -55oC30-mA

3 -55oC - -30 mA

2, 3 +125oC, -55oC - 33 mA

2, 3 +125oC, -55oC -33 - mA

.

IBP

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Characterized at V

= ±5V, RL = 100Ω, Unless Otherwise Specified.

SUPPLY

PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE

-3dB Bandwidth BW(-1) AV = -1, V
BW(+1) AV = +1, V
BW(+2) AV = +2, V

Gain Flatness GF30 AV = +2, f ≤ 30MHz

V

= 200mV

OUT

GF50 AV = +2, f ≤ 50MHz

V

= 200mV

OUT

GF100 AV = +2, f ≤ 100MHz

V

= 200mV

OUT

Slew Rate +SR(-1) AV = -1, V

-SR(-1) AV = -1, V

+SR(+1) AV = +1, V

-SR(+1) AV = +1, V

+SR(+2) AV = +2, V

-SR(+2) AV = +2, V

Rise and Fall Time TR(-1) AV = -1, V

TF(-1) AV = -1, V

OUT

OUT
OUT

OUT
OUT

OUT
OUT
OUT

OUT
OUT
OUT

= 200mV

= 200mV
= 200mV

P-P

P-P

P-P

= 5V

P-P

= 5V

P-P

= 5V

P-P

= 5V

P-P

= 5V

P-P

= 5V

P-P

= 0.5V

P-P

= 0.5V

P-P

P-P

P-P
P-P

1 +25oC 450 - MHz
1 +25oC 500 - MHz
1 +25oC 350 - MHz
1 +25oC-±0.04 dB

1 +25oC-±0.08 dB

1 +25oC-±0.22 dB

1, 2 +25oC 1500 - V/µs
1, 2 +25oC 1800 - V/µs
1, 2 +25oC 900 - V/µs
1, 2 +25oC 800 - V/µs
1, 2 +25oC 1200 - V/µs
1, 2 +25oC 1100 - V/µs
1, 2 +25oC - 750 ps
1, 2 +25oC - 800 ps

LIMITS

UNITSMIN MAX

TR(+1) AV = +1, V

TF(+1) AV = +1, V

TR(+2) AV = +2, V

TF(+2) AV = +2, V

OUT

OUT

OUT

OUT

= 0.5V

= 0.5V

= 0.5V

= 0.5V

P-P

P-P

P-P

P-P

1, 2 +25oC - 750 ps

1, 2 +25oC - 750 ps

1, 2 +25oC - 1000 ps

1, 2 +25oC - 1000 ps

Spec Number 511084-883

3-186

Specifications HFA1112/883

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

Device Characterized at V

PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE

Overshoot +OS(-1) AV = -1, V

Settling Time TS(0.1) AV = +2, to 0.1%

2nd Harmonic
Distortion

3rd Harmonic
Distortion

NOTES:

1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These pa­rameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by character­ization based upon data from multiple production runs which reflect lot-to-lot and within lot variation.

2. Measured between 10% and 90% points.

3. For 200ps input transition times. Overshoot decreases as input transition times increase, especially for AV = +1. Please refer to
Performance curves.

= ±5V, RL = 100Ω, Unless Otherwise Specified.

SUPPLY

= 0.5V

-OS(-1) AV = -1, V

+OS(+1) AV = +1, V

-OS(+1) AV = +1, V

+OS(+2) AV = +2, V

-OS(+2) AV = +2, V

V

= 2V to 0V

OUT

OUT
OUT

OUT
OUT
OUT
OUT

= 0.5V

= 0.5V
= 0.5V
= 0.5V
= 0.5V

P-P
P-P

P-P
P-P
P-P
P-P

TS(0.05) AV = +2, to 0.05%

V

= 2V to 0V

OUT

HD2(30) AV = +2, f = 30MHz

V

= 2V

OUT

P-P

HD2(50) AV = +2, f = 50MHz

V

= 2V

OUT

P-P

HD2(100) AV = +2, f = 100MHz

V

= 2V

OUT

P-P

HD3(30) AV = +2, f = 30MHz

V

= 2V

OUT

P-P

HD3(50) AV = +2, f = 50MHz

V

= 2V

OUT

P-P

HD3(100) AV = +2, f = 100MHz

V

= 2V

OUT

P-P

LIMITS

UNITSMIN MAX

1, 3 +25oC - 30 %
1, 3 +25oC - 25 %
1, 3 +25oC - 65 %
1, 3 +25oC - 60 %
1, 3 +25oC - 20 %
1, 3 +25oC - 20 %

1 +25oC - 20 ns

1 +25oC - 33 ns

1 +25oC - -45 dBc

1 +25oC - -40 dBc

1 +25oC - -35 dBc

1 +25oC - -65 dBc

1 +25oC - -55 dBc

1 +25oC - -45 dBc

TABLE 4. ELECTRICAL TEST REQUIREMENTS

MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLE 1)

Interim Electrical Parameters (Pre Burn-In) 1
Final Electrical Test Parameters 1 (Note 1), 2, 3
Group A Test Requirements 1, 2, 3
Groups C and D Endpoints 1

NOTE:

1. PDA applies to Subgroup 1 only.

3-187

Spec Number 511084-883

HFA1112/883

Die Characteristics

DIE DIMENSIONS:

63 x 44 x 19 mils ± 1 mils
1600µm x 1130µm x 483µm ± 25.4µm

METALLIZATION:

Type: Metal 1: AICu(2%)/TiW Type: Metal 2: AICu(2%)
Thickness: Metal 1: 8k

Å ± 0.4kÅ Thickness: Metal 2: 16kÅ ± 0.8kÅ

GLASSIVATION:

Type: Nitride
Thickness: 4k

WORST CASE CURRENT DENSITY:

2.0 x 10

Å ± 0.5kÅ

5

A/cm2at 47.5mA

TRANSISTOR COUNT: 52
SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-)

Metallization Mask Layout

HFA1112/883

NC

NC

NC

+IN

V-

-IN

NC

V+

OUT

3-188

Spec Number 511084-883

HFA1112/883

Test Circuit

-V

IN

+V

IN

V

+I

BIAS

Z

=

100K

V

Z

(Applies to Table 1)

V+

0.1

100K (0.01%)

­+

HA-5177

K2

K1

+

I

CC

NC

1

2
1

2

0.1

10 0.1

0.1

+

2

3

10 0.1

+

-

7

DUT

4

510

6

100 100

0.1

510

470pF

K3

1K

V

VOS =

+

­x100

V

OUT

Y

100

V

Y

NOTE:

I

EE

1. All Resistors = ±1% (Ω)

2. All Capacitors = ±10% (µF)

V-

3. Unless Otherwise Noted

4. Chip Components Recommended

5. For AV = +1, K1 = Position 1, K2 = Position 1

6. For AV = +2, K1 = Position 1, K2 = Position 2, -VIN = 0V

7. For AV = -1, K1 = Position 1, K2 = Position 2, +VIN = 0V

Test Waveforms

SIMPLIFIED TEST CIRCUIT FOR LARGE AND SMALL SIGNAL PULSE RESPONSE (Applies to Table 3)

AV = +1 or +2 TEST CIRCUIT

V

IN

R

S

50Ω

NOTE:

1. VS = ±5V, RG = 0Ω for AV = +2, RG = ∞ for AV = +1

2. RF = Internal, RS = 50Ω

3. RL = 100Ω For Small and Large Signals

LARGE SIGNAL WAVEFORM

V

OUT

+2.5V

+SR

-2.5V -2.5V

10%

R

3
2

G

90%

V+

+

7

6

-

V-

50Ω

4

90%

10%

50Ω

V

-SR

OUT

2

+2.5V

AV = -1 TEST CIRCUIT

V+

7

2

V

IN

R

S

50Ω

6

-

3

+

4

V-

50Ω

50Ω

NOTE:

1. VS = ±5V, AV = -1

2. RF = Internal

3. RS = 50Ω, RL = 100Ω For Small and Large Signals

SMALL SIGNAL WAVEFORM

V

OUT

+250mV

TR, +OS

-250mV -250mV

10%

90%

90%

T

10%

V

OUT

2

+250mV

, -OS

F

3-189

Spec Number 511084-883