Intersil Corporation HFA1100-883 Datasheet

HFA1100/883

July 1994

Features

• This Circuit is Processed in Accordance to MIL-STD­883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.

• Low Distortion (HD3, 30MHz) . . . . . . . . . . -84dBc (Typ)

• Wide -3dB Bandwidth . . . . . . . . . . . . . . . 850MHz (Typ)

• Very High Slew Rate . . . . . . . . . . . . . . . 2300V/µs (Typ)

• Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . 11ns (Typ)

• Excellent Gain Flatness (to 50MHz) . . . . . 0.05dB (Typ)

• High Output Current . . . . . . . . . . . . . . . . . . 65mA (Typ)

• Fast Overdrive Recovery. . . . . . . . . . . . . . . <10ns (Typ)

Applications

• Video Switching and Routing

• Pulse and Video Amplifiers

• Wideband Amplifiers

• RF/IF Signal Processing

850MHz Current Feedback Amplifier

Description

The HFA1100/883 is a high speed, wideband, fast settling
current feedback amplifier. Built with Intersil’ proprietary,
complementary bipolar UHF-1 process, it is the fastest
monolithic amplifier available from any semiconductor man­ufacturer.

The HFA1100/883’s wide bandwidth, fast settling character­istic, and low output impedance, make this amplifier ideal for
driving fast A/D converters.

Component and composite video systems will also benefit
from this amplifier’s performance, as indicated by the excel­lent gain flatness, and 0.03%/0.05 Deg. Differential Gain/
Phase specifications (R

Ordering Information

PART NUMBER

HFA1100MJ/883 -55oC to +125oC 8 Lead CerDIP

=75Ω).

L

TEMPERATURE

RANGE PACKAGE

• Flash A/D Driver

• Medical Imaging Systems

Pinout

NC

-IN

+IN

1
2
3
4

V-

HFA1100/883

(CERDIP)

TOP VIEW

-

+

8

NC

7

V+

6

OUT

5

NC

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

3-174

Spec Number 511104-883

File Number 3615.1

Specifications HFA1100/883

Absolute Maximum Ratings Thermal Information

Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-

Output Current (50% Duty Cycle) . . . . . . . . . . . . . . . . . . . . . . . .±55mA

Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .< 2000V

Storage Temperature Range . . . . . . . . . . . . . . -65oC ≤ TA≤ +150oC

Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Operating Conditions

Operating V

Operating Temperature Range. . . . . . . . . . . . .-55oC ≤ TA≤ +125oC

Device Tested at: V

PARAMETERS SYMBOL CONDITIONS

Input Offset Voltage V

Common Mode
Rejection Ratio

Power Supply
Rejection Ratio

Non-Inverting Input (+IN)
Current

+IN Current Common
Mode Sensitivity

+IN Resistance +R

Inverting Input (-IN)
Current

-IN Current Common
Mode Sensitivity

-IN Current Power
Supply Sensitivity

Output Voltage Swing V

(±VS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V

SUPPLY

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

= ±5V, AV= +1, RF= 510Ω, R

SUPPLY

VCM= 0V 1 +25oC-66mV

IO

CMRR ∆VCM= ±2V

V+ = 3V, V- = -7V
V+ = 7V, V- = -3V

PSRRP ∆V

SUPPLY

V+ = 6.25V, V- = -5V
V+ = 3.75V, V- = -5V

PSRRN ∆V

SUPPLY

V+ = 5V, V- = -6.25V
V+ = 5V, V- = -3.75V

I

BSP

CMS

VCM= 0V 1 +25oC -40 40 µA

∆VCM= ±2V

IBP

V+ = 3V, V- = -7V
V+ = 7V, V- = -3V

Note 1 1 +25oC25-kΩ

IN

I

BSN

CMS

VCM= 0V 1 +25oC -50 50 µA

∆VCM= ±2V

IBN

V+ = 3V, V- = -7V
V+ = 7V, V- = -3V

PPSS

IBN

∆V

SUPPLY

V+ = 6.25V, V- = -5V
V+ = 3.75V, V- = -5V

NPSS

IBN

∆V

SUPPLY

V+ = 5V, V- = -6.25V
V+ = 5V, V- = -3.75V

OP100

AV=-1
RL= 100Ω

V

ON100

AV=-1
RL= 100Ω

SOURCE

= ±1.25V

= ±1.25V

= ±1.25V

= ±1.25V

VIN= -3.5V 1 +25oC3-V
VIN= -3V 2, 3 +125oC, -55oC 2.5 - V
VIN=+3.5V 1 +25oC - -3 V
VIN= +3V 2, 3 +125oC, -55oC - -2.5 V

Thermal Resistance θ

CerDIP Package . . . . . . . . . . . . . . . . . 115oC/W 30oC/W

Maximum Package Power Dissipation at +75oC

CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.87W

Package Power Dissipation Derating Factor above +75oC

CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8.7mW/oC

RL≥ 50Ω

= 0Ω, RL = 100Ω, V

= 0V, Unless Otherwise Specified.

OUT

GROUP A

SUBGROUPS TEMPERATURE

2, 3 +125oC, -55oC -10 10 mV

1 +25oC40-dB

2, 3 +125oC, -55oC38 - dB

1 +25oC45-dB

2, 3 +125oC, -55oC42 - dB

1 +25oC45-dB

2, 3 +125oC, -55oC42 - dB

2, 3 +125oC, -55oC -65 65 µA

1 +25oC-40µA/V

2, 3 +125oC, -55oC-50µA/V

2, 3 +125oC, -55oC20 - kΩ

2, 3 +125oC, -55oC -75 75 µA

1 +25oC-7µA/V

2, 3 +125oC, -55oC-10µA/V

1 +25oC-15µA/V

2, 3 +125oC, -55oC-27µA/V

1 +25oC-15µA/V

2, 3 +125oC, -55oC-27µA/V

JA

LIMITS

θ

JC

UNITSMIN MAX

3-175

Spec Number 511104-883

Specifications HFA1100/883

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

Device Tested at: V

PARAMETERS SYMBOL CONDITIONS

Output Voltage Swing V

Output Current +I

Quiescent Power
Supply Current

NOTES:

1. Guaranteed from +IN Common Mode Rejection Test, by: +RIN= 1/CMS

2. Guaranteed from V

= ±5V, AV= +1, RF= 510Ω, R

SUPPLY

OP50

V

ON50

OUT

-I

OUT

I

CC

I

EE

Test with RL=50Ω, by: I

OUT

= 0Ω, RL = 100Ω, V

SOURCE

AV=-1
RL=50Ω

AV=-1
RL=50Ω

VIN= -3V 1, 2 +25oC, +125oC 2.5 - V
VIN= -2V 3 -55oC 1.5 - V
VIN= +3V 1, 2 +25oC, +125oC - -2.5 V
VIN= +2V 3 -55oC - -1.5 V

Note 2 1, 2 +25oC, +125oC50 - mA

Note 2 1, 2 +25oC, +125oC - -50 mA

RL= 100Ω 1 +25oC1426mA

RL= 100Ω 1 +25oC -26 -14 mA

OUT=VOUT

/50Ω.

= 0V, Unless Otherwise Specified.

OUT

GROUP A

SUBGROUPS TEMPERATURE

LIMITS

UNITSMIN MAX

3 -55oC30-mA

3 -55oC - -30 mA

2, 3 +125oC, -55oC - 33 mA

2, 3 +125oC, -55oC -33 - mA

.

IBP

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

Table 2 Intentionally Left Blank. See AC Specifications in Table 3

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Characterized at: V

= ±5V, AV= +2, RF= 360Ω, RL = 100Ω, Unless Otherwise Specified.

SUPPLY

PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE

-3dB Bandwidth BW(-1) AV= -1, RF= 430Ω
V

= 200mV

OUT

P-P

BW(+1) AV= +1, RF= 510Ω

V

= 200mV

OUT

P-P

BW(+2) AV= +2,

V

= 200mV

OUT

P-P

Gain Flatness GF30 AV= +2, RF= 510Ω, f ≤ 30MHz

V

= 200mV

OUT

P-P

GF50 AV= +2, RF= 510Ω, f ≤ 50MHz

V

= 200mV

OUT

P-P

GF100 AV= +2, RF= 510Ω, f ≤ 100MHz

V

= 200mV

OUT

P-P

1 +25oC 300 - MHz

1 +25oC 550 - MHz

1 +25oC 350 - MHz

1 +25oC-±0.04 dB

1 +25oC-±0.10 dB

1 +25oC-±0.30 dB

LIMITS

UNITSMIN MAX

3-176

Spec Number 511104-883

Specifications HFA1100/883

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

Device Characterized at: V

PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE

Slew Rate +SR(+1) AV= +1, RF= 510Ω,V

Rise and Fall Time T

= ±5V, AV= +2, RF= 360Ω, RL = 100Ω, Unless Otherwise Specified.

SUPPLY

-SR(+1) AV= +1, RF= 510Ω,V

+SR(+2) AV= +2, V

-SR(+2) AV= +2, V
AV= +2, V

R

OUT

OUT

OUT

= 5V
= 5V
= 0.5V

P-P

P-P

OUT

OUT

P-P

= 5V
= 5V

1, 2 +25oC 1200 - V/µs

P-P

1, 2 +25oC 1100 - V/µs

P-P

1, 2 +25oC 1650 - V/µs
1, 2 +25oC 1500 - V/µs
1, 2 +25oC-1ns

LIMITS

UNITSMIN MAX

T

Overshoot +OS AV= +2, V

-OS AV= +2, V

Settling Time TS(0.1) AV= +2, RF= 510Ω

TS(0.05) AV= +2, RF= 510Ω

2nd Harmonic
Distortion

HD2(30) AV= +2, f = 30MHz, V
HD2(50) AV= +2, f = 50MHz, V

HD2(100) AV= +2, f = 100MHz,

3rd Harmonic
Distortion

HD3(30) AV= +2, f = 30MHz,V
HD3(50) AV= +2, f = 50MHz, V

HD3(100) AV= +2, f = 100MHz,

F

AV= +2, V

V

OUT

V

OUT

V

OUT

V

OUT

OUT

OUT

OUT

= 2V to 0V, to 0.1%

= 2V to 0V, to 0.05%

= 2V

P- P

= 2V

P-P

= 0.5V

= 0.5V
= 0.5V

P-P

P-P

P-P

OUT

OUT

OUT

OUT

= 2V
= 2V

= 2V
= 2V

1, 2 +25oC-1ns

1, 3 +25oC - 25 %
1, 3 +25oC - 20 %

1 +25oC - 20 ns

1 +25oC - 33 ns

P-P

P-P

1 +25oC - -48 dBc
1 +25oC - -45 dBc
1 +25oC - -35 dBc

P-P

P-P

1 +25oC - -65 dBc
1 +25oC - -60 dBc
1 +25oC - -40 dBc

NOTES:

1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param­eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot-to-lot and within lot variation.

2. Measured between 10% and 90% points.

3. For 200ps input transition times. Overshoot decreases as input transition times increase, especially for AV= +1. Please refer to
Performance Curves.

TABLE 4. ELECTRICAL TEST REQUIREMENTS

MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLE 1)

Interim Electrical Parameters (Pre Burn-In) 1

Final Electrical Test Parameters 1 (Note 1), 2, 3

Group A Test Requirements 1, 2, 3

Groups C and D Endpoints 1

NOTE:

1. PDA applies to Subgroup 1 only.

3-177

Spec Number 511104-883

HFA1100/883

Die Characteristics

DIE DIMENSIONS:

63 x 44 x 19 mils ± 1 mils
1600µm x 1130µm x 483µm ± 25.4µm

METALLIZATION:

Type: Metal 1: AICu(2%)/TiW Type: Metal 2: AICu(2%)
Thickness: Metal 1: 8k

Å ± 0.4kÅ Thickness: Metal 2: 16kÅ ± 0.8kÅ

GLASSIVATION:

Type: Nitride
Thickness: 4k

WORST CASE CURRENT DENSITY:

2.0 x 10

Å ± 0.5kÅ

5

A/cm2at 47.5mA

TRANSISTOR COUNT: 52
SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-)

Metallization Mask Layout

HFA1100/883

+IN

V

BAL

-IN

V-

L

OUT

BAL

V

H

V+

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Spec Number 511104-883