Intersil Corporation HCTS85MS Datasheet

September 1995

HCTS85MS

Radiation Hardened

4-Bit Magnitude Comparator

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

2

/mg

-9

Errors/

Bit-Day (Typ)

• Dose Rate Survivability: >1 x 10

• Dose Rate Upset >10

10

RAD (Si)/s 20ns Pulse

12

RAD (Si)/s

• Latch-Up Free Under Any Conditions

• Fanout (Over Temperature Range)

-Standard Outputs: 10 LSTTL Loads

o

• Military Temperature Range: -55

C to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• LSTTL Input Compatibility

-VIL = 0.8V Max

-VIH = VCC/2 Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCTS85MS is a Radiation Hardened 4-bit high
speed magnitude comparator. This device compares two
binary, BCD, or other monotonic codes and presents the
three possible magnitude results at the outputs (A>B, A<B,
and A=B). The 4-bit input words are weighted (A0 to A3 and
B0 to B3), where A3 and B3 are the most significant bits.
The HCTS85MS is expandable without external gating, both
serial and parallel operation.

The HCTS85MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family
with TTL input compatibility.

Pinouts

16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE

(SBDIP) MIL-STD-1835 CDIP2-T16, LEAD FINISH C

TOP VIEW

16

1

B3

GND

2
3
4
5
6
7
8

TOP VIEW

116
2
3
4
5
6
7
8

(A<B)IN
(A=B)IN

(A>B)IN
(A<B)OUT
(A=B)OUT
(A>B)OUT

16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH C

B3
(A<B)IN
(A=B)IN
(A>B)IN

(A<B)OUT
(A=B)OUT
(A>B)OUT

GND

VCC

15

A3

14

B2

13

A2

12

A1
B1

11
10

A0

9

B0

15
14
13
12
11
10

9

VCC
A3
B2
A2
A1
B1
A0
B0

The HCTS85MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

HCTS85DMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead SBDIP

HCTS85KMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead Ceramic Flatpack

HCTS85D/Sample +25oC Sample 16 Lead SBDIP

HCTS85K/Sample +25oC Sample 16 Lead Ceramic Flatpack

HCTS85HMSR +25oC Die Die

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

1

Spec Number

File Number 3059.1

518624

Functional Block Diagram

B3

B3

A3

A3
B2

B2

A2

A2
B1

B1

A1

A1

B0

B0

A0

A0

B3

A3

B2

A2

B1

A1

(A>B)

B0

A0

(A=B)

(A<B)

1

15

14

13

11

12

4

IN

9

10

3

IN

2

IN

A1
B1

A3
B3

A2
B2

A2
B2

A3
B3

A1
B1

HCTS85MS

B0
A0

B0
A0

7

6

5

(A<B)
OUT

(A=B)
OUT

(A>B)
OUT

TRUTH TABLE

COMPARING INPUTS CASCADING INPUTS OUTPUTS

A3, B3 A2, B2 A1, B1 A0, B0 A>B A<B A=B A>B A<B A=B

A3>B3 XXXXXXHLL
A3<B3 XXXXXXLHL
A3=B3 A2>B2 XXXXXHLL
A3=B3 A2<B2 XXXXXLHL
A3=B3 A2=B2 A1>B1 XXXXHLL
A3=B3 A2=B2 A1<B1 XXXXLHL
A3=B3 A2=B2 A1=B1 A0>B0 X X X H L L
A3=B3 A2=B2 A1=B1 A0<B0 X X X L H L
A3=B3 A2=B2 A1=B1 A0=B0 H L L H L L
A3=B3 A2=B2 A1=B1 A0=B0 L H L L H L
A3=B3 A2=B2 A1=B1 A0=B0 L L H L L H
A3=B3 A2=B2 A1=B1 A0=B0 X X H L L H
A3=B3 A2=B2 A1=B1 A0=B0 H H LLLL
A3=B3 A2=B2 A1=B1 A0=B0 L L L H H L

NOTE: L = Logic Level Low, H = Logic Level High, x = Immaterial

2

Single Device

OR

Series Cascading

Parallel Cascading

Spec Number 518624

Specifications HCTS85MS

Absolute Maximum Ratings Reliability Information

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.

Operating Conditions

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . 500ns Max.

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W

If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.7mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.8mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . . . 2.0V to VCC

JA

θ

JC

(NOTE 1)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current
(Sink)

Output Current
(Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 2.25V,

Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,

Input Leakage
Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC - 0.4V,
VIL = 0V

IOL = 50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V

IOH = -50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-40µA

2, 3 +125oC, -55oC - 750 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1 +25oC -4.8 - mA

2, 3 +125oC, -55oC -4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Noise Immunity
Functional Test

NOTES:

1. All voltages referenced to device GND.

2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V, VIH = 2.25V,

VIL = 0.8V (Note 2)

7, 8A, 8B +25oC, +125oC, -55oC---

3

Spec Number 518624