Intersil Corporation HCTS390MS Datasheet

September 1995

HCTS390MS

Radiation Hardened

Dual Decade Ripple Counter

Features

• 3 Micron Radiation Hardened CMOS SOS

• Total Dose 200K RAD (Si)

2

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

/mg

-9

Errors/

Bit-Day (Typ)

• Dose Rate Survivability: >1 x 10

10

• Dose Rate Upset >10

RAD (Si)/s 20ns Pulse

12

RAD (Si)/s

• Latch-Up Free Under Any Conditions

o

• Military Temperature Range: -55

C to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• LSTTL Input Compatibility

- VIL = 0.8V Max

- VIH = 2.0V Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCTS390MS is a Radiation Hardened dual
decade ripple counter.

The HCTS390MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family .

The HCTS390MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).

Pinouts

CP0N 1

MR 1

Q0 1

CP1N 1

Q1 1
Q2 1
Q3 1
GND

16 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T16

TOP VIEW

16

CP0N 1

CP1N 1

FLATPACK PACKAGE (FLATPACK)

1
2

MR 1

3

Q0 1

4
5

Q1 1

6

Q2 1

7

Q3 1

8

GND

16 LEAD CERAMIC METAL SEAL

MIL-STD-1835 CDFP4-F16

TOP VIEW

116
2
3
4
5
6
7
8

VCC

15

CP0N 2

14

MR 2

13

Q0 2

12

CP1N 2

11

Q1 2

10

Q2 2

9

Q3 2

15
14
13
12
11
10

9

VCC
CP0N 2
MR 2
Q0 2
CP1N 2
Q1 2
Q2 2
Q3 2

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

HCTS390DMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead SBDIP

HCTS390KMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead Ceramic Flatpack

HCTS390D/Sample +25oC Sample 16 Lead SBDIP

HCTS390K/Sample +25oC Sample 16 Lead Ceramic Flatpack

HCTS390HMSR +25oC Die Die

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

662

Spec Number

File Number 2476.2

DB NA

518634

Functional Diagram

4(12)
CP1

n

1(15)

nCP0

2(14)

nMR

HCTS390MS

Q

φ

R

Q

φ

R

Q

φ

R

Q

φ

R

3(13)

INPUTS

H H All Qs Low

H = High Level
L = Low Logic Level
X = Immaterial

= Low-to-High
= High-to-Low

nQ0

5(11)

6(10) 7(9)

nQ1

TRUTH TABLE

L No Change

L Count

nQ2 nQ3

ACTIONCP MR

663

Spec Number 518634

Specifications HCTS390MS

Absolute Maximum Ratings Reliability Information

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.

Operating Conditions

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

Input Rise and Fall Time at 4.5V VCC (tr, tf) . . . . . . . . . .500ns Max

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W

If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.7mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.8mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . . . 2.0V to VCC

JA

θ

JC

(NOTE 1)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current
(Sink)

Output Current
(Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 2.25V,

Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,

Input Leakage
Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V
(Standard Driver)

VOUT = VCC - 0.4V,
VIL = 0V (Standard Driver)

IOL = 50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V

IOH = -50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-40µA

2, 3 +125oC, -55oC - 750 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1 +25oC -4.8 - mA

2, 3 +125oC, -55oC -4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Noise Immunity
Functional Test

NOTES:

1. All voltages referenced to device GND.

2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V, VIH = 2.25V,

VIL = 0.80V (Note 2)

7, 8A, 8B +25oC, +125oC, -55oC---

664

Spec Number 518634