Intersil Corporation HCTS365MS Datasheet
September 1995
HCTS365MS
Radiation Hardened
Hex Buffer/Line Driver Non-Inverting
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
2
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
/mg
-9
Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 10
10
• Dose Rate Upset >10
RAD (Si)/s 20ns Pulse
12
RAD (Si)/s
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Bus Driver Outputs: 15 LSTTL Loads
• Military Temperature Range: -55
o
C to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii ≤ 5µA @ VOL, VOH
Description
The Intersil HCTS365MS is a Radiation Hardened noninverting hex buffer and line driver with Tri-state outputs. The
output enables (
puts. If either
High impedance state. For Data,
Low.
OE1 and OE2) control the three-state out-
OE1 or OE2 is high the outputs will be in a
OE1 and OE2 must be
Pinouts
OE1
A1
Y1
A2
Y2
A3
Y3
GND
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
16
1
OE1
2
A1
3
Y1
4
A2
5
Y2
6
A3
7
Y3
8
GND
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
116
2
3
4
5
6
7
8
VCC
15
OE2
14
A6
13
Y6
12
A5
11
Y5
10
A4
9
Y4
15
14
13
12
11
10
9
VCC
OE2
A6
Y6
A5
Y5
A4
Y4
The HCTS365MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family
Ordering Information
PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE
HCTS365DMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead SBDIP
HCTS365KMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead Ceramic Flatpack
HCTS365D/Sample +25oC Sample 16 Lead SBDIP
HCTS365K/Sample +25oC Sample 16 Lead Ceramic Flatpack
HCTS365HMSR +25oC Die Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
Spec Number
File Number 3070.1
518637
Functional Diagram
OE1
OE2
HCTS365MS
XX
2
1A
1
15
ONE OF THE IDENTICAL CIRCUITS
4
2A
6
2A
10
2A
12
2A
14
2A
GND
8
3
7
9
11
13
3
1Y
27
7
2
27
27
27
TRUTH TABLE
INPUTS OUTPUTS
OE1 OE2 A Y
LLLL
LLHH
XHXZ
HXXZ
Spec Number 518637
2
Specifications HCTS365MS
Absolute Maximum Ratings Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V (TR, TF) . . . . . . . . . . 500ns Max.
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Thermal Resistance θ
SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.7mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.8mW/oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
JA
θ
JC
(NOTE 1)
PARAMETER SYMBOL
Quiescent Current ICC VCC = 5.5V,
Output Current
(Sink)
Output Current
(Source)
Output Voltage Low VOL VCC = 4.5V, VIH = 2.25V,
Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,
Input Leakage
Current
IOL VCC = 4.5V, VIH = 4.5V,
IOH VCC = 4.5V, VIH = 4.5V,
IIN VCC = 5.5V, VIN = VCC or
CONDITIONS
VIN = VCC or GND
VOUT = 0.4V, VIL = 0
VOUT = VCC - 0.4V,
VIL = 0V
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH =2.75V,
IOH = -50µA, VIL = 0.8V
GND
GROUP
A SUB-
GROUPS TEMPERATURE
1 +25oC-40µA
2, 3 +125oC, -55oC - 750 µA
1 +25oC 7.2 - mA
2, 3 +125oC, -55oC 6.0 - mA
1 +25oC -7.2 - mA
2, 3 +125oC, -55oC -6.0 - mA
1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
1, 2, 3 +25oC, +125oC, -55oC VCC
1, 2, 3 +25oC, +125oC, -55oC VCC
1 +25oC-±0.5 µA
2, 3 +125oC, -55oC-±5.0 µA
LIMITS
-V
-0.1
-V
-0.1
UNITSMIN MAX
Three-State Output
Leakage Current
Noise Immunity
Functional Test
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
IOZ VCC = 5.5V,
Applied Voltage = 0V or VCC
FN VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
1 +25oC-±1 µA
2, 3 +125oC, -55oC-±50 µA
7, 8A, 8B +25oC, +125oC, -55oC---
3
Spec Number 518637
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