September 1995
HCTS32MS
Radiation Hardened
Quad 2-Input OR Gate
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
2
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
/mg
-9
Errors/Bit-Day
(Typ)
• Dose Rate Survivability: >1 x 10
10
• Dose Rate Upset >10
RAD (Si)/s 20ns Pulse
12
RAD (Si)/s
• Latch-Up Free Under Any Conditions
o
• Military Temperature Range: -55
C to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii ≤ 5µA @ VOL, VOH
Description
The Intersil HCTS32MS is a Radiation Hardened Quad 2-Input OR
Gate. A Low on all inputs forces the output to a Low state.
The HCTS32MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
Pinouts
B1
Y1
A2
B2
Y2
GND
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14
TOP VIEW
A1
1
2
B1
3
Y1
4
A2
5
B2
6
Y2
7
GND
14 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP3-F14
TOP VIEW
1A1
2
3
4
5
6
7
14
VCC
13
B4
12
A4
11
Y4
10
B3
9
A3
8
Y3
14
13
12
11
10
9
8
VCC
B4
A4
Y4
B3
A3
Y3
The HCTS32MS is supplied in a 14 lead Ceramic flatpack (K
Functional Diagram
suffix) or a SBDIP Package (D suffix).
An
Ordering Information
PART
NUMBER
HCTS32DMSR -55oC to +125oC Intersil Class
HCTS32KMSR -55oC to +125oC Intersil Class
HCTS32D/
Sample
HCTS32K/
Sample
HCTS32HMSR +25oC Die Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
TEMPERATURE
RANGE
+25oC Sample 14 Lead SBDIP
+25oC Sample 14 Lead
| Copyright © Intersil Corporation 1999
SCREENING
LEVEL PACKAGE
14 Lead SBDIP
S Equivalent
14 Lead
S Equivalent
Ceramic
Flatpack
Ceramic
Flatpack
450
(1, 4, 9, 12)
Bn
(2, 5, 10, 13)
NOTE: L = Logic Level Low, H = Logic level High
Yn
(3, 6, 8, 11)
TRUTH TABLE
INPUTS OUTPUTS
An Bn Yn
LLL
LHH
HLH
HHH
Spec Number
518638
File Number 2248.2
DB NA
Specifications HCTS32MS
Absolute Maximum Ratings Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . 100ns/V Max
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Thermal Resistance θ
SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.5mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.6mW/oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
JA
θ
JC
(NOTE 1)
PARAMETER SYMBOL
Quiescent Current ICC VCC = 5.5V,
Output Current
(Sink)
Output Current
(Source)
Output Voltage Low VOL VCC = 4.5V, VIH = 2.25V,
Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,
Input Leakage
Current
IOL VCC = 4.5V, VIH = 4.5V,
IOH VCC = 4.5V, VIH = 4.5V,
IIN VCC = 5.5V, VIN = VCC or
CONDITIONS
VIN = VCC or GND
VOUT = 0.4V, VIL = 0V
(Note 3)
VOUT = VCC -0.4V,
VIL = 0V (Note 3)
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
GND
GROUP
A SUB-
GROUPS TEMPERATURE
1 +25oC-10µA
2, 3 +125oC, -55oC - 200 µA
1 +25oC 4.8 - mA
2, 3 +125oC, -55oC 4.0 - mA
1 +25oC -4.8 - mA
2, 3 +125oC, -55oC -4.0 - mA
1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
1, 2, 3 +25oC, +125oC, -55oC VCC
1, 2, 3 +25oC, +125oC, -55oC VCC
1 +25oC-±0.5 µA
2, 3 +125oC, -55oC-±5.0 µA
LIMITS
-V
-0.1
-V
-0.1
UNITSMIN MAX
Noise Immunity
Functional Test
NOTES:
1. All voltages reference to device GND.
2. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
3. Force/Measure functions may be interchanged.
FN VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
7, 8A, 8B +25oC, +125oC, -55oC---
451
Spec Number 518638
Specifications HCTS32MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
(NOTES 1, 2)
PARAMETER SYMBOL
Input to Output TPHL VCC = 4.5V 9 +25oC 2 18 ns
Input to Output TPLH VCC = 4.5V 9 +25oC 2 20 ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input tr = tf = 3ns, VIL = GND, VIH = 3V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
Capacitance Power
Dissipation
Input Capacitance CIN VCC = 5.0V, f = 1MHz 1 +25oC - 10 pF
CPD VCC = 5.0V, f = 1MHz 1 +25oC - 30 pF
CONDITIONS
A SUB-
GROUPS TEMPERATURE
10, 11 +125oC, -55oC 2 20 ns
10, 11 +125oC, -55oC 2 22 ns
1 +125oC, -55oC - 45 pF
LIMITS
LIMITS
UNITSMIN MAX
UNITSMIN MAX
1 +125oC - 10 pF
Output Transition
Time
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
PARAMETER SYMBOL
Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.2 mA
Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND,
Output Current
(Source)
Output Voltage Low VOL VCC = 4.5V and 5.5V,
TTHL
TTLH
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
VCC = 4.5V 1 +25oC - 15 ns
1 +125oC - 22 ns
(NOTES 1, 2)
CONDITIONS TEMPERATURE
+25oC 4.0 - mA
VOUT = 0.4V
IOH VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VIH = VCC/2, VIL = 0.8V , IOL = 50µA
+25oC -4.0 - mA
+25oC - 0.1 V
200K RAD
LIMITS
UNITSMIN MAX
Output Voltage High VOH VCC = 4.5V and 5.5V,
VIH = VCC/2, VIL = 0.8V, IOH = -50µA
Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC-±5 µA
+25oC VCC
-0.1
-V
Spec Number 518638
452