Intersil Corporation HCTS27MS Datasheet

September 1995

HCTS27MS

Radiation Hardened

Triple 3-Input NOR Gate

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD (Si)

2

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

/mg

-9

Errors/Bit-Day

(Typ)

• Dose Rate Survivability: >1 x 10

10

• Dose Rate Upset >10

RAD (Si)/s 20ns Pulse

12

RAD (Si)/s

• Latch-Up Free Under Any Conditions

o

• Military Temperature Range: -55

C to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• LSTTL Input Compatibility

- VIL = 0.8V Max

- VIH = VCC/2 Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCTS27MS is a Radiation Hardened Triple 3-Input
NOR Gate. A Low on all inputs forces the output to a High state.

Pinouts

14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL

PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14

TOP VIEW

A1

1
2

B1

3

A2

4

B2

5

C2

6

Y2

7

GND

14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE

(FLATPACK) MIL-STD-1835 CDFP3-F14

TOP VIEW

1A1
B1
A2
B2
C2
Y2

GND

2

3

4

5

6

7

14

VCC

13

C1

12

Y1

11

C3

10

B3

9

A3

8

Y3

14
13

12
11
10

9
8

VCC
C1
Y1
C3
B3
A3
Y3

The HCTS27MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of

Functional Diagram

radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS27MS is supplied in a 14 lead Ceramic flatpack (K

suffix) or a SBDIP Package (D suffix).

Ordering Information

PART

NUMBER

HCTS27DMSR -55oC to +125oC Intersil Class

HCTS27KMSR -55oC to +125oC Intersil Class

HCTS27D/
Sample

HCTS27K/
Sample

HCTS27HMSR +25oC Die Die

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

TEMPERATURE

RANGE

+25oC Sample 14 Lead SBDIP

+25oC Sample 14 Lead

| Copyright © Intersil Corporation 1999

SCREENING

LEVEL PACKAGE

14 Lead SBDIP

S Equivalent

14 Lead

S Equivalent

Ceramic
Flatpack

Ceramic
Flatpack

An Bn Cn Yn

LLL H
LLH L
LHL L

LHH L
HLL L
HLH L
HHL L
HHH L

NOTE: L = Logic Level Low, H = Logic level High

430

An

Bn Yn

Cn

TRUTH TABLE

INPUTS OUTPUTS

Spec Number

518643

File Number 3055.1

DB NA

Specifications HCTS27MS

Absolute Maximum Ratings Reliability Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.

Operating Conditions

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (tr, tf) . . . . . . 100ns/V Max.

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W

If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.5mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.6mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC

JA

θ

JC

(NOTE 1)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current
(Sink)

Output Current
(Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 2.25V,

Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,

Input Leakage
Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC -0.4V,
VIL = 0V

IOL = 50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V

IOH = -50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-10µA

2, 3 +125oC, -55oC - 200 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1 +25oC -4.8 - mA

2, 3 +125oC, -55oC -4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Noise Immunity
Functional Test

NOTES:

1. All voltages reference to device GND.

2. For functional tests VO ≥4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V, VIH = 2.25V,

VIL = 0.8V (Note 2)

7, 8A, 8B +25oC, +125oC, -55oC---

431

Spec Number 518643

Specifications HCTS27MS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP

(NOTES 1, 2)

PARAMETER SYMBOL

Input to Output TPHL VCC = 4.5V 9 +25oC 2 18 ns

Input to Output TPLH VCC = 4.5V 9 +25oC 2 20 ns

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Capacitance Power
Dissipation

Input Capacitance CIN VCC = 5.0V, f = 1MHz 1 +25oC - 10 pF

CPD VCC = 5.0V, f = 1MHz 1 +25oC - 35 pF

CONDITIONS

A SUB-

GROUPS TEMPERATURE

10, 11 +125oC, -55oC 2 20 ns

10, 11 +125oC, -55oC 2 22 ns

1 +125oC, -55oC - 38 pF

LIMITS

LIMITS

UNITSMIN MAX

UNITSMIN MAX

1 +125oC - 10 pF

Output Transition
Time

NOTE:

1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.2 mA

Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND,

Output Current
(Source)

Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = VCC/2,

TTHL
TTLH

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

VCC = 4.5V 1 +25oC - 15 ns

1 +125oC, -55oC - 22 ns

(NOTES 1, 2)

CONDITIONS TEMPERATURE

+25oC 4.0 - mA

VOUT = 0.4V

IOH VCC = 4.5V, VIN = VCC or GND,

VOUT = VCC -0.4V

VIL = 0.8V , IOL = 50µA

+25oC -4.0 - mA

+25oC - 0.1 V

200K RAD

LIMITS

UNITSMIN MAX

Output Voltage High VOH VCC = 4.5V and 5.5V, VIH = VCC/2,

VIL = 0.8V , IOH = -50µA

Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC-±5 µA

+25oC VCC

-0.1

-V

Spec Number 518643

432