Intersil Corporation HCTS245MS Datasheet

September 1995

HCTS245MS

Radiation Hardened

Octal Bus Transceiver, Three-State, Non-Inverting

Features

• 3 Micron Radiation Hardened CMOS SOS

• Total Dose 200K RAD (Si)

2

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

/mg

-9

Errors/

Bit-Day (Typ)

12

• Dose Rate Survivability: >1 x 10

10

• Dose Rate Upset >10

RAD (Si)/s 20ns Pulse

RAD (Si)/s

• Latch-Up Free Under Any Conditions

• Fanout (Over Temperature Range)

- Bus Driver Outputs - 15 LSTTL Loads

o

• Military Temperature Range: -55

C to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• LSTTL Input Compatibility

- VIL = 0.8V Max

- VIH = VCC/2 Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCTS245MS is a Radiation Hardened Non­Inverting Octal Bidirectional Bus Transceiver, Three-State,
intended for two-way asynchronous communication between
data busses. The HCTS245MS allows data transmission
from the A bus to the B bus or from the B bus to the A bus.
The logic level at the direction input (DIR) determines the
data direction. The output enable input (
in the high-impedance state when high.

The HCTS245MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCTS245MS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).

OE) puts the I/O port

Pinouts

DIR

A0
A1
A2
A3
A4
A5
A6
A7

GND

20 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T20

TOP VIEW

1

DIR

2

A0

3

A1

4

A2

5

A3

6

A4

7

A5

8

A6

9

A7

10

GND

20 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDFP4-F20

TOP VIEW

120
2
3
4
5
6
7
8
9
10

20

VCC

19

OE

18

B0

17

B1

16

B2

15

B3

14

B4

13

B5

12

B6

11

B7

19
18
17
16
15
14
13
12
11

VCC
OE
B0
B1
B2
B3
B4
B5
B6
B7

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

HCTS245DMSR -55oC to +125oC Intersil Class S Equivalent 20 Lead SBDIP

HCTS245KMSR -55oC to +125oC Intersil Class S Equivalent 20 Lead Ceramic Flatpack

HCTS245D/Sample +25oC Sample 20 Lead SBDIP

HCTS245K/Sample +25oC Sample 20 Lead Ceramic Flatpack

HCTS245HMSR +25oC Die Die

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

614

Spec Number

File Number 2360.2

DB NA

518615

Functional Diagram

B DATA

11

(18, 17, 16, 15,

14, 13, 12)

DIR

OUTPUT
ENABLE

19

HCTS245MS

ONE OF 8 TRANSCEIVERS

P
N

P

N

1

TRUTH TABLE

CONTROL

INPUTS

A DATA

9
(2, 3, 4, 5,

6, 7, 8)

TO OTHER
7 CIRCUITS

OPERATIONOE DIR

L L B Data to A Bus

L H A Data to B Bus

H X Isolation

H = High Voltage Level, L = Low Voltage Level,
X = Immaterial

To prevent excess currents in the High-Z (Isolation) modes, all I/O terminals
should be terminated with 10kΩ to 1MΩ resistors.

615

Spec Number 518615

Specifications HCTS245MS

Absolute Maximum Ratings Reliability Information

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..

Operating Conditions

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . . .500ns Max

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 72oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 107oC/W 28oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W

If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.9mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .9.3mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC

JA

θ

JC

(NOTE 1)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current
(Sink)

Output Current
(Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 2.25V,

Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,

Input Leakage
Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC -0.4V,
VIL = 0V

IOL = 50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V

IOH = -50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-40µA

2, 3 +125oC, -55oC - 750 µA

1 +25oC 7.2 - mA

2, 3 +125oC, -55oC 6.0 - mA

1 +25oC -7.2 - mA

2, 3 +125oC, -55oC -6.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Three-State Output
Leakage Current

Noise Immunity
Functional Test

NOTES:

1. All voltages reference to device GND.

2. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

IOZ VCC = 5.5V, Applied

Voltage = 0V or VCC

FN VCC = 4.5V, VIH = 2.25V,

VIL = 0.8V (Note 2)

1 +25oC-±1 µA

2, 3 +125oC, -55oC-±50 µA

7, 8A, 8B +25oC, +125oC, -55oC---

616

Spec Number 518615