September 1995
HCTS240AMS
Radiation Hardened
Octal Buffer/Line Driver, Three-State
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
2
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
/mg
-9
Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 10
10
• Dose Rate Upset >10
RAD (Si)/s 20ns Pulse
12
RAD (Si)/s
• Latch-Up Free Under Any Conditions
o
• Military Temperature Range: -55
C to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii ≤ 5µA at VOL, VOH
Description
The Intersil HCTS240AMS is a Radiation Hardened inverting
octal buffer/line driver , three-state, with two active low output
enables (1
controls outputs 2Yn.
The HCTS240AMS utilizes advanced CMOS/SOS
technology to achieve high-speed operation. This device is a
member of radiation hardened, high-speed, CMOS/SOS
Logic Family .
OE, 2OE). 1OE controls outputs 1Yn, 2OE
Pinouts
1 OE
1 A0
Y3
2
1 A1
Y2
2
1 A2
2 Y1
1 A3
Y0
2
GND
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20, LEAD FINISH C
TOP VIEW
1 OE
1 A0
2
Y3
1 A1
2
Y2
1 A2
2
Y1
1 A3
Y0
2
GND
1
2
3
4
5
6
7
8
9
10
VCC
20
2
OE
19
1
Y0
18
2 A3
17
1
Y1
16
2 A2
15
Y2
1
14
2 A1
13
12
Y3
1
11
2 A0
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20, LEAD FINISH C
TOP VIEW
120
2
3
4
5
6
7
8
9
10
19
18
17
16
15
14
13
12
11
VCC
OE
2
Y0
1
2 A3
1
Y1
2 A2
Y2
1
2 A1
Y3
1
2 A0
The HCTS240AMS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE
HCTS240ADMSR -55oC to +125oC Intersil Class S Equivalent 20 Lead SBDIP
HCTS240AKMSR -55oC to +125oC Intersil Class S Equivalent 20 Lead Ceramic Flatpack
HCTS240AD/Sample +25oC Sample 20 Lead SBDIP
HCTS240AK/Sample +25oC Sample 20 Lead Ceramic Flatpack
HCTS240AHMSR +25oC Die Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
Spec Number
File Number 2105.2
518889
Specifications HCTS240AMS
Absolute Maximum Ratings Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±35mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . . .100ns Max
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Thermal Resistance θ
SBDIP Package. . . . . . . . . . . . . . . . . . . . 72oC/W 24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 107oC/W 28oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.9mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .9.3mW/oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . VCC to VCC/2V
JA
θ
JC
(NOTE 1)
PARAMETER SYMBOL
Supply Current ICC VCC = 5.5V,
Output Current
(Sink)
Output Current
(Source)
Output Voltage Low VOL VCC = 4.5V, VIH = 2.25V,
Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,
Input Leakage
Current
IOL VCC = 4.5V, VIH = 4.5V,
IOH VCC = 4.5V, VIH = 4.5V,
IIN VCC = 5.5V, VIN = VCC or
CONDITIONS
VIN = VCC or GND
VOUT = 0.4V, VIL = 0V,
(Note 2)
VOUT = VCC - 0.4V,
VIL = 0V, (Note 2)
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
GND
GROUP
A SUB-
GROUPS TEMPERATURE
1 +25oC-40µA
2, 3 +125oC, -55oC - 750 µA
1 +25oC 7.2 - mA
2, 3 +125oC, -55oC 6.0 - mA
1 +25oC -7.2 - mA
2, 3 +125oC, -55oC -6.0 - mA
1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
1, 2, 3 +25oC, +125oC, -55oC VCC
1, 2, 3 +25oC, +125oC, -55oC VCC
1 +25oC-±0.5 µA
2, 3 +125oC, -55oC-±5.0 µA
LIMITS
-V
-0.1
-V
-0.1
UNITSMIN MAX
Three-State Output
Leakage Current
Noise Immunity
Functional Test
NOTES:
1. All voltages referenced to device GND.
2. Force/measure functions may be interchanged.
3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
4. Due to tester noise at -55oC VIH is increased 200mV.
IOZ VCC = 5.5V,
Applied Voltage = 0V or
VCC
FN VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 3)
1 +25oC-±1 µA
2, 3 +125oC, -55oC-±50 µA
7, 8A, 8B +25oC, +125oC, -55oC- - V
3
Spec Number 518889