Intersil Corporation HCTS191MS Datasheet

September 1995

HCTS191MS

Radiation Hardened

Synchronous 4-Bit Up/Down Counter

Features

• 3 Micron Radiation Hardened CMOS SOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

2

/mg

-9

Errors/Bit-

Day (Typ)

• Dose Rate Survivability: >1 x 10

• Dose Rate Upset: >10

10

RAD (Si)/s 20ns Pulse

• Cosmic Ray Upset Immunity 2 x 10

12

RAD (Si)/s

-9

Errors/Bit Day

• Latch-Up Free Under Any Conditions

• Fanout (Over Temperature Range)

- Standard Outputs - 10 LSTTL Loads

• Military Temperature Range: -55

o

C to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• LSTTL Input Compatibility

- VIL = 0.8V Max

- VIH = VCC/2 Min

• Input Current Levels Ii ≤ 5µA @ VOL, VOH

Description

The Intersil HCTS191MS is a Radiation Hardened asynchro­nously presettable 4 bit binary up/down synchronous counter.
Presetting the counter to the number on the preset data inputs
(P0 - P3) is accomplished by a low asynchronous parallel load
input (

PL). Counting occurs when PL is high, Count Enable (CE)
is low, and the
or high for down-counting. The counter is incremented or decre­mented synchronously with the low-to-high transition of the clock.

When an overflow or underflow of the counter occurs, the
Terminal Count output (TC), which is low during counting, goes
high and remains high for one clock cycle. This output can be
used for look-ahead carry in high speed cascading. The TC
output also initiates the Ripple Clock output (
high, goes low and remains low for the low-level portion of the
clock pulse. These counter can be cascaded using the Ripple
Carry output.

The HCTS191MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCTS191MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).

Up/Down (U/D) input is either low for up-counting

RC) which, normally

Pinouts

16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE

(SBDIP) MIL-STD-1835 CDIP2-T16

TOP VIEW

P1

1

Q1

2

Q0

3

CE

4

U/D

5

Q2

6

Q3

7

GND

8

16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE

(FLATPACK) MIL-STD-1835 CDFP4-F16

TOP VIEW

P1
Q1
Q0
CE

U/D

Q2
Q3

GND

FUNCTION

Count Up H L L
Count Down H L H
Asynchronous Preset L X X X
No Change H H X X

H = High Level, L = Low Level, X = Immaterial

= Transition from low to high

NOTE: U/D orCE should be changed only when CLOCK (CP)

is high.

116
2
3
4
5
6
7
8

TRUTH TABLE

PL CE U/D CP

VCC

16

P0

15
14

CP

13

RC

12

TC

11

PL
P2

10

9

P3

VCC
15
14
13
12
11
10

9

P0
CP
RC
TC
PL
P2
P3

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

HCTS191DMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead SBDIP
HCTS191KMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead Ceramic Flatpack
HCTS191D/Sample +25oC Sample 16 Lead SBDIP
HCTS191K/Sample +25oC Sample 16 Lead Ceramic Flatpack
HCTS191HMSR +25oC Die Die

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

580

Spec Number

File Number 2250.2

DB NA

518621

Functional Diagram

581

CP

U/D

PD

14

5

11

13

RC

12

TC

HCTS191MS

PL

P

TCPQ

Q

FF0

PL

P

TCPQ

FF1

PL

P

TCPQ

Q

Q

FF2

PL

P

TCPQ

Q

FF3

Spec Number 518621

CE

4

Q0

3

Q1

2

Q2

6

Q3

7

Specifications HCTS191MS

Absolute Maximum Ratings Reliability Information

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..

Operating Conditions

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . .500ns Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W

If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.7mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.8mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC

JA

θ

JC

(NOTE 1)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current
(Sink)

Output Current
(Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 2.25V,

Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,

Input Leakage
Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC -0.4V,
VIL = 0V

IOL = 50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V

IOH = -50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-40µA

2, 3 +125oC, -55oC - 750 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1 +25oC -4.8 - mA

2, 3 +125oC, -55oC -4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC - 5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Noise Immunity
Functional Test

NOTES:

1. All voltages reference to device GND.

2. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V, VIH = 2.25V,

VIL = 0.8V (Note 2)

7, 8A, 8B +25oC, +125oC, -55oC---

582

Spec Number 518621