Intersil Corporation HCTS190MS Datasheet

September 1995

HCTS190MS

Radiation Hardened

Synchronous 4-Bit Up/Down Counter

Features

• 3 Micron Radiation Hardened CMOS SOS

• Total Dose 200K RAD (Si)

2

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10
Bit-Day (Typ)

• Dose Rate Survivability: >1 x 10

10

• Dose Rate Upset >10

RAD (Si)/s 20ns Pulse

12

RAD (Si)/s

• Latch-Up Free Under Any Conditions

• Fanout (Over Temperature Range)

- Standard Outputs - 10 LSTTL Loads

• Military Temperature Range: -55

o

C to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• LSTTL Input Compatibility

- VIL = 0.8V Max

- VIH = VCC/2 Min

• Input Current Levels Ii ≤ 5µA @ VOL, VOH

/mg

-9

Errors/

Description

The Intersil HCTS190MS is an asynchronously presettable
BCD Decade synchronous counter. Presetting the counter to
the number on the preset data inputs (P0 - P3) is accom­plished by a low on the parallel load input (
occurs when (
Up/Down (

PL) is high, Count Enable (CE) is low and the

U/D) input is either low for up-counting or high for
down-counting. The counter is incremented or decremented
synchronously with the low-to-high transition of the clock.

When an overflow or underflow of the counter occurs, the
Terminal Count output (TC), which is low during counting,
goes high and remains high for one clock cycle. This output
can be used for look-ahead carry in high speed cascading.
The TC output also initiates the Ripple Clock output (
which, normally high, goes low and remains low for the low­level portion of the clock pulse. These counter can be cas­caded using the Ripple Carry output.

If the decade counter is preset to an illegal state or assumes
an illegal state when power is applied, it will return to the
normal sequence in one or two counts

The HCTS190MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCTS190MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).

PL). Counting

RC)

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

HCTS190DMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead SBDIP
HCTS190KMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead Ceramic Flatpack
HCTS190D/Sample +25oC Sample 16 Lead SBDIP
HCTS190K/Sample +25oC Sample 16 Lead Ceramic Flatpack
HCTS190HMSR +25oC Die Die

Pinouts

16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE

(SBDIP) MIL-STD-1835 CDIP2-T16, LEAD FINISH C

TOP VIEW

P1
Q1
Q0
CE

U/D

Q2
Q3

GND

1
2
3
4
5
6
7
8

VCC

16

P0

15
14

CP

13

RC

12

TC

11

PL
P2

10

P3

9

16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH C

TOP VIEW

P1
Q1
Q0
CE

U/D

Q2
Q3

GND

116
2
3
4
5
6
7
8

15
14
13
12
11
10

9

VCC
P0
CP
RC
TC
PL
P2
P3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

1

Spec Number

518614

File Number 2474.2

Functional Diagram

HCTS190MS

PL

11

U/D

5

CE

4

CP
14

9P310 P21P115 P0

PL PL PL PL

CP

P

Q

T

Q

2Q1 6Q2

P

T

CP

Q

Q

P
T

CP

P

Q

T

Q

CP

FF0 FF1 FF2 FF3

3Q0

Q

Q

Q3

7

TC
12

13

RC

TRUTH TABLE

FUNCTION P; CE U/D CP

Count Up H L L

Count Down H L H

Asynchronous Preset L X X X

No Change H H X X

H = High Level
L = Low Level
X = Immaterial

= Transition from low to high

NOTE: U/D or CE should be changed only when clock is high.

Spec Number 518614

2

Specifications HCTS190MS

Absolute Maximum Ratings Reliability Information

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..

Operating Conditions

Supply Voltage(VCC) . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times @ 4.5 VCC (TR, TF). . . . . . . .500ns Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W

If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.7mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.8mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC

JA

θ

JC

(NOTE 1)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current
(Sink)

Output Current
(Source)

Output Voltage Low VOL VCC = 4.5V, VIH =2.25V,

Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,

Input Leakage
Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC -0.4V,
VIL = 0V

IOL = 50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V

IOL = -50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V,
IOL = -50µA, VIL = 0.8V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-40µA

2, 3 +125oC, -55oC - 750 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1 +25oC -4.8 - mA

2, 3 +125oC, -55oC -4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Noise Immunity
Functional Test

NOTES:

1. All voltages reference to device GND.

2. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤0.5V is recognized as a logic “0”.

FN VCC = 4.5V, VIH = 2.25V,

VIL = 0.8V (Note 2)

7, 8A, 8B +25oC, +125oC, -55oC---

3

Spec Number 518614