Intersil Corporation HCTS163MS Datasheet

September 1995

HCTS163MS

Radiation Hardened

Synchronous Counter

Features

• 3 Micron Radiation Hardened CMOS SOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

2

/mg

-9

Errors/Bit-Day

(Typ)

12

• Dose Rate Survivability: >1 x 10

10

• Dose Rate Upset: >10

RAD (Si)/s 20ns Pulse

RAD (Si)/s

• Latch-Up Free Under Any Conditions

• Fanout (Over Temperature Range)

- Standard Outputs 10 LSTTL Loads

o

• Military Temperature Range: -55

C to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• LSTTL Input Compatibility

- VIL = 0.8V Max

- VIH = VCC/2 Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCTS163MS is a Radiation Hardened synchronous
presettable counter that feature look-ahead carry logic for use in
high speed counting application. HCTS163MS is a binary counter,
and is reset synchronously with the clock. Counting and parallel
presetting are both accomplished synchronously with the negative
to positive transition of the clock.

The HCTS163MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.

Pinouts

MR

CP

P0
P1
P2
P3

PE

GND

16 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T16

TOP VIEW

16

1

MR

2

CP

3

P0

4

P1

5

P2

6

P3

7

PE

8

GND

16 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDFP4-F16

TOP VIEW

116
2
3
4
5
6
7
8

VCC
TC

15
14

Q0

13

Q1

12

Q2
Q3

11
10

TE

9

SPE

15
14
13
12
11
10

9

VCC
TC
Q0
Q1
Q2
Q3
TE
SPE

The HCTS163MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

HCTS163DMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead SBDIP

HCTS163KMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead Ceramic Flatpack

HCTS163D/Sample +25oC Sample 16 Lead SBDIP

HCTS163K/Sample +25oC Sample 16 Lead Ceramic Flatpack

HCTS163HMSR +25oC Die Die

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

570

Spec Number

File Number 2480.2

DB NA

518600

Functional Block Diagram

7

PE

10

MR

TE

9

SPE

1

2

CP

TE

VCC

T0
MR

HCTS163MS

Q0 Q1 Q2 Q3

6

Q3

T3
MR

P3

TE

P

D3

CP

P0

3

P

D0

Q0

CP

T1
MR

P1

4

P

D1

Q1

CP

T2
MR

P2

5

P

D2

Q2

CP

Q0

Q1

1314

12

11

Q3Q2

TC

15

TRUTH TABLE

INPUTS OUTPUTS

OPERATING MODE

MR CP PE TE SPE PN QN TC

Reset (clear) l XXXXLL

Parallel Load h (Note 3) X X l l L L

h (Note 3) X X l h H (Note 1)

Count h (Note 3) h h h (Note 3) X Count (Note 1)

Inhibit h (Note 3) X l (Note 2) X h (Note 3) X Qn (Note 1)

h (Note 3) X X l (Note 2) h (Note 3) X Qn L

H = HIGH Voltage Level
L = LOW Voltage Level
h = HIGH voltage level one setup time prior to the LOW-to-HIGH clock transition
l = LOW voltage level one setup time prior to the LOW-to-HIGH clock transition
X = Immaterial
q = Lower case letter indicate the state of the referenced output prior to the LOW-to-HIGH clock transition

= LOW-to-HIGH clock transition

NOTES:

1. The TC output is HIGH when TE is HIGH and the counter is at terminal count (HLLH for 162 and HHHH for 163)

2. The HIGH-to-LOW transition of PE or TE on the 54/74163 and 54/74160 should only occur while CP is high for conventional operation

3. The LOW-to-HIGH transition of SPE or MR on the 54/74163 should only occur while CP is high for conventional operation

Spec Number 518600

571

Specifications HCTS163MS

Absolute Maximum Ratings Reliability Information

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.

Operating Conditions

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5 VCC (TR, TF) . . . . . . . .500ns Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W

If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.7mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.8mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC

JA

θ

JC

(NOTE 1)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current
(Sink)

Output Current
(Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 2.25V,

Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,

Input Leakage
Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC - 0.4V,
VIL = 0V

IOL = 50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V

IOH = -50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-40µA

2, 3 +125oC, -55oC - 750 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1 +25oC -4.8 - mA

2, 3 +125oC, -55oC -4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Noise Immunity
Functional Test

NOTES:

1. All voltages referenced to device GND.

2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V, VIH = 2.25V,

VIL = 0.8V (Note 2)

7, 8A, 8B +25oC, +125oC, -55oC---

572

Spec Number 518600