September 1995
HCTS161AMS
Radiation Hardened
Synchronous Counter
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• Minimum LET for SEU Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
2
/mg
-9
Errors/Bit-
Day (Typ)
12
• Dose Rate Survivability: >1 x 10
10
• Dose Rate Upset >10
RAD (Si)/s 20ns Pulse
RAD (Si)/s
• Latch-Up Free Under Any Conditions
o
• Military Temperature Range: -55
C to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
-VIL = 0.8V Max
-VIH = VCC/2V Min
• Input Current Levels Ii ≤ 5µA at VOL, VOH
Description
The Intersil HCTS161AMS high-reliability high-speed presettable
four-bit binary synchronous counter features asynchronous reset
and look-ahead carry logic. The HCTS161AMS has an active-low
master reset to zero,
enable,
SPE, disables counting and allows data at the preset
inputs (P0 - P3) to load the counter. The data is latched to the
outputs on the positive edge of the clock input, CP. The
HCTS161AMS has two count enable pins, PE and TE. TE also
controls the terminal count output, TC. The terminal count output
indicates a maximum count for one clock pulse and is used to
enable the next cascaded stage to count.
The HCTS161AMS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
MR. A low level at the synchronous parallel
Pinouts
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
MR
CP
P0
P1
P2
P3
PE
GND
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
TOP VIEW
MR
1
CP
2
P0
3
P1
4
P2
5
P3
6
PE
7
GND
8
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
TOP VIEW
116
2
3
4
5
6
7
8
VCC
16
TC
15
Q0
14
Q1
13
12
Q2
11
Q3
10
TE
9
SPE
15
14
13
12
11
10
9
VCC
TC
Q0
Q1
Q2
Q3
TE
SPE
The HCTS161AMS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE
HCTS161ADMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead SBDIP
HCTS161AKMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead Ceramic Flatpack
HCTS161AD/Sample +25oC Sample 16 Lead SBDIP
HCTS161AK/Sample +25oC Sample 16 Lead Ceramic Flatpack
HCTS161AHMSR +25oC Die Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
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Spec Number
File Number 2144.2
518888
Specifications HCTS161AMS
Absolute Maximum Ratings Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . .100ns Max
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Thermal Resistance θ
SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.7mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.8mW/oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
JA
θ
JC
(NOTE 1)
PARAMETER SYMBOL
Supply Current ICC VCC = 5.5V,
Output Current
(Sink)
Output Current
(Source)
Output Voltage Low VOL VCC = 4.5V, VIH = 2.25V,
Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,
Input Leakage
Current
IOL VCC = 4.5V, VIH = 4.5V,
IOH VCC = 4.5V, VIH = 4.5V,
IIN VCC = 5.5V, VIN = VCC or
CONDITIONS
VIN = VCC or GND
VOUT = 0.4V, VIL = 0V ,
(Note 2)
VOUT = VCC -0.4V,
VIL = 0V, (Note 2)
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
GND
GROUP
A SUB-
GROUPS TEMPERATURE
1 +25oC-40µA
2, 3 +125oC, -55oC - 750 µA
1 +25oC 4.8 - mA
2, 3 +125oC, -55oC 4.0 - mA
1 +25oC -4.8 - mA
2, 3 +125oC, -55oC -4.0 - mA
1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
1, 2, 3 +25oC, +125oC, -55oC VCC
1, 2, 3 +25oC, +125oC, -55oC VCC
1 +25oC-±0.5 µA
2, 3 +125oC, -55oC-±5.0 µA
LIMITS
-V
-0.1
-V
-0.1
UNITSMIN MAX
Noise Immunity
Functional Test
NOTES:
1. All voltages reference to device GND.
2. Force/measure functions may be interchanged.
3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
FN VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 3)
7, 8A, 8B +25oC, +125oC, -55oC- - V
2
Spec Number 518888
Specifications HCTS161AMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
(NOTES 1, 2)
PARAMETER SYMBOL
Propagation Delay
CP to Qn
Propagation Delay
CP to TC
Propagation Delay
TE to TC
Propagation Delay
MR to Q
Propagation Delay
MR to TC
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TPLH1 VCC = 4.5V, VIH = 3.0V,
TPHL1 VCC = 4.5V, VIH = 3.0V,
TPLH2 VCC = 4.5V, VIH = 3.0V,
TPHL2 VCC = 4.5V, VIH = 3.0V,
TPLH3 VCC = 4.5V, VIH = 3.0V,
TPHL3 VCC = 4.5V, VIH = 3.0V,
TPHL4 VCC = 4.5V, VIH = 3.0V,
TPHL5 VCC = 4.5V, VIH = 3.0V,
CONDITIONS
VIL = 0V
VIL = 0V
VIL = 0V
VIL = 0V
VIL = 0V
VIL = 0V
VIL = 0V
VIL = 0V
A SUB-
GROUPS TEMPERATURE
9 +25oC 2 27 ns
10, 11 +125oC, -55oC 2 29 ns
9 +25oC 2 27 ns
10, 11 +125oC, -55oC 2 29 ns
9 +25oC 2 28 ns
10, 11 +125oC, -55oC 2 31 ns
9 +25oC 2 29 ns
10, 11 +125oC, -55oC 2 33 ns
9 +25oC 2 20 ns
10, 11 +125oC, -55oC 2 21 ns
9 +25oC225
10, 11 +125oC, -55oC229
9 +25oC 2 38 ns
10, 11 +125oC, -55oC 2 45 ns
9 +25oC 2 44 ns
10, 11 +125oC, -55oC 2 51 ns
LIMITS
UNITSMIN MAX
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(NOTE 1)
PARAMETER SYMBOL
Capacitance Power
Dissipation
Input Capacitance CIN VCC = 5.0V, VIH = 5.0,
Pulse Width Time CP TW VCC = 4.5V, VIH = 4.5,
Pulse Width Time MR TW VCC = 4.5V, VIH = 4.5,
Setup Time Pn to CP TSU VCC = 4.5V, VIH = 4.5,
Setup Time PE to CP or TE TSU VCC = 4.5V, VIH = 4.5,
Setup Time SPE to CP TSU VCC = 4.5V, VIH = 4.5,
Hold Time Pn to CP TSU VCC = 4.5V, VIH = 4.5,
CPD VCC = 5.0V, VIH = 5.0,
CONDITIONS TEMPERATURE
VIL = 0.0V, f = 1MHz
VIL = 0.0V, f = 1MHz
VIL = 0.0V,
VIL = 0.0V,
VIL = 0.0V,
VIL = 0.0V,
VIL = 0.0V,
VIL = 0.0V,
LIMITS
UNITSMIN MAX
+25oC - 231 pF
+125oC, -55oC - 285 pF
+25oC - 10 pF
+125oC, -55oC - 10 pF
+25oC16-ns
+125oC, -55oC24-ns
+25oC20-ns
+125oC, -55oC30-ns
+25oC10-ns
+125oC, -55oC15-ns
+25oC13-ns
+125oC, -55oC20-ns
+25oC12-ns
+125oC, -55oC18-ns
+25oC5-ns
+125oC, -55oC5-ns
Spec Number 518888
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