Intersil Corporation HCTS153MS Datasheet

September 1995

HCTS153MS

Radiation Hardened

Dual 4-Input Multiplexer

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

/mg

-9

Errors/

Bit-Day (Typ)

• Dose Rate Survivability: >1 x 10

• Dose Rate Upset >10

RAD (Si)/s 20ns Pulse

RAD (Si)/s

• Latch-Up Free Under Any Conditions

• Fanout (Over Temperature Range)

- Standard Outputs 10 LSTTL Loads

• Military Temperature Range -55

C to +125oC

• Signiﬁcant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range 4.5V to 5.5V

• LSTTL Input Compatibility

- VIL = 0.8V Max

- VIH = VCC/2 Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCTS153MS is a Radiation Hardened dual 4-to-1 line selector/multiplexer which selects one of four sources for each section by the common select inputs, S0 and S1. When the enable inputs (1 outputs are in the low logic state.

The HCTS153MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCTS153MS is supplied in a 16 lead Ceramic ﬂatpack (K sufﬁx) or a SBDIP Package (D sufﬁx).

E, 2E) are high, the

Pinouts

S1 1I3 1I2 1I1 1I0

GND

16 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T16

TOP VIEW

1I3

1I2

1I1

1I0

GND

16 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDFP4-F16

TOP VIEW

116 2 3 4 5 6 7 8

VCC

2I3

2I2 2I1

11 10

2I0

15 14 13 12 11 10

VCC 2

E S0 2I3 2I2 2I1 2I0 Y2

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

HCTS153DMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead SBDIP

HCTS153KMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead Ceramic Flatpack

HCTS153D/Sample +25oC Sample 16 Lead SBDIP

HCTS153K/Sample +25oC Sample 16 Lead Ceramic Flatpack

HCTS153HMSR +25oC Die Die

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207

540

Spec Number

File Number 2463.2

DB NA

518609

Functional Block Diagram

HCTS153MS

VCC

GND

13 12 11 10 14 2

S0 S1 1E1I0 1I1 1I2 1I32I02I12I22I32E

543

TRUTH TABLE

SELECT INPUTS DATA INPUTS ENABLE OUTPUT

S1 S0 I0 I1 I2 I3 EY

XXXXXXHL LLLXXXLL LLHXXXLH LHXLXXLL LHXHXXLH HLXXLXLL HLXXHXLH HHXXXLLL HHXXXHLH

Select inputs A and B are common to both sections H = High Level, L = Low Level, X = Immaterial

Spec Number 518609

541

Speciﬁcations HCTS153MS

Absolute Maximum Ratings Reliability Information

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classiﬁcation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.

Operating Conditions

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . .500ns Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W

If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.7mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.8mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC

(NOTE 1)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current (Sink)

Output Current (Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 2.25V,

Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,

Input Leakage Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC - 0.4V, VIL = 0V

IOL = 50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V, IOL = 50µA, VIL = 0.8V

IOH = -50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V, IOH = -50µA, VIL = 0.8V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-40µA

2, 3 +125oC, -55oC - 750 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1 +25oC -4.8 - mA

2, 3 +125oC, -55oC -4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Noise Immunity Functional Test

NOTES:

1. All voltages referenced to device GND.

2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V, VIH = 2.25V,

VIL = 0.8V (Note 2)

7, 8A, 8B +25oC, +125oC, -55oC---

542

Spec Number 518609

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