Intersil Corporation HCTS153MS Datasheet

September 1995
HCTS153MS
Radiation Hardened
Dual 4-Input Multiplexer
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
2
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
/mg
-9
Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 10
10
• Dose Rate Upset >10
RAD (Si)/s 20ns Pulse
12
RAD (Si)/s
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
- Standard Outputs 10 LSTTL Loads
• Military Temperature Range -55
o
C to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range 4.5V to 5.5V
• LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii 5µA at VOL, VOH
Description
The Intersil HCTS153MS is a Radiation Hardened dual 4-to-1 line selector/multiplexer which selects one of four sources for each section by the common select inputs, S0 and S1. When the enable inputs (1 outputs are in the low logic state.
The HCTS153MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS153MS is supplied in a 16 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).
E, 2E) are high, the
Pinouts
1E
S1 1I3 1I2 1I1 1I0
Y1
GND
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16
TOP VIEW
16
1
1E
2
S1
3
1I3
4
1I2
5
1I1
6
1I0
7
Y1
8
GND
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16
TOP VIEW
116 2 3 4 5 6 7 8
VCC
15
E
2
14
S0
13
2I3
12
2I2 2I1
11 10
2I0
9
Y2
15 14 13 12 11 10
9
VCC 2
E S0 2I3 2I2 2I1 2I0 Y2
Ordering Information
PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE
HCTS153DMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead SBDIP
HCTS153KMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead Ceramic Flatpack
HCTS153D/Sample +25oC Sample 16 Lead SBDIP
HCTS153K/Sample +25oC Sample 16 Lead Ceramic Flatpack
HCTS153HMSR +25oC Die Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
540
Spec Number
File Number 2463.2
DB NA
518609
Functional Block Diagram
HCTS153MS
VCC
GND
15
13 12 11 10 14 2
S0 S1 1E1I0 1I1 1I2 1I32I02I12I22I32E
6
543
1
9
2Y
7
1Y
TRUTH TABLE
SELECT INPUTS DATA INPUTS ENABLE OUTPUT
S1 S0 I0 I1 I2 I3 EY
XXXXXXHL LLLXXXLL LLHXXXLH LHXLXXLL LHXHXXLH HLXXLXLL HLXXHXLH HHXXXLLL HHXXXHLH
Select inputs A and B are common to both sections H = High Level, L = Low Level, X = Immaterial
Spec Number 518609
541
Specifications HCTS153MS
Absolute Maximum Ratings Reliability Information
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . .500ns Max
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Thermal Resistance θ
SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.7mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.8mW/oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
JA
θ
JC
(NOTE 1)
PARAMETER SYMBOL
Quiescent Current ICC VCC = 5.5V,
Output Current (Sink)
Output Current (Source)
Output Voltage Low VOL VCC = 4.5V, VIH = 2.25V,
Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,
Input Leakage Current
IOL VCC = 4.5V, VIH = 4.5V,
IOH VCC = 4.5V, VIH = 4.5V,
IIN VCC = 5.5V, VIN = VCC or
CONDITIONS
VIN = VCC or GND
VOUT = 0.4V, VIL = 0V
VOUT = VCC - 0.4V, VIL = 0V
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V, IOL = 50µA, VIL = 0.8V
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V, IOH = -50µA, VIL = 0.8V
GND
GROUP
A SUB-
GROUPS TEMPERATURE
1 +25oC-40µA
2, 3 +125oC, -55oC - 750 µA
1 +25oC 4.8 - mA
2, 3 +125oC, -55oC 4.0 - mA
1 +25oC -4.8 - mA
2, 3 +125oC, -55oC -4.0 - mA
1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
1, 2, 3 +25oC, +125oC, -55oC VCC
1, 2, 3 +25oC, +125oC, -55oC VCC
1 +25oC-±0.5 µA
2, 3 +125oC, -55oC-±5.0 µA
LIMITS
-V
-0.1
-V
-0.1
UNITSMIN MAX
Noise Immunity Functional Test
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
FN VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
7, 8A, 8B +25oC, +125oC, -55oC---
542
Spec Number 518609
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