Intersil Corporation HCTS138MS Datasheet

August 1995

HCTS138MS

Radiation Hardened Inverting

3-to-8 Line Decoder/Demultiplexer

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

/mg

-9

Errors/

Bit-Day (Typ)

• Dose Rate Survivability: >1 x 10

• Dose Rate Upset >10

RAD (Si)/s 20ns Pulse

RAD (Si)/s

• Latch-Up Free Under Any Conditions

• Fanout (Over Temperature Range)

- Bus Driver Outputs - 15 LSTTL Loads

• Military Temperature Range: -55

C to +125oC

• Signiﬁcant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• LSTTL Input Compatibility

- VIL = 0.8V Max

- VIH = VCC/2 Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCTS138MS is a Radiation Hardened 3-to-8 line Decoder/Demultiplexer. The outputs are active in the low state. Two active low and one active high enables ( E3) are provided. If the device is enabled, the binary inputs (A0, A1, A2) determine which one of the eight normally high outputs will go to a low logic level.

The HCTS138MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCTS138MS is supplied in a 16 lead Ceramic ﬂatpack (K sufﬁx) or a SBDIP Package (D sufﬁx).

E1, E2,

Pinouts

A0 A1 A2 E1 E2 E3 Y7

GND

16 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T16

TOP VIEW

VCC

GND

16 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDFP4-F16

TOP VIEW

116 2 3 4 5 6 7 8

16 15

15 14 13 12 11 10

VCC Y0 Y1 Y2 Y3 Y4 Y5 Y6

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

HCTS138DMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead SBDIP

HCTS138KMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead Ceramic Flatpack

HCTS138D/Sample +25oC Sample 16 Lead SBDIP

HCTS138K/Sample +25oC Sample 16 Lead Ceramic Flatpack

HCTS138HMSR +25oC Die Die

510

Spec Number

File Number 2462.2

DB NA

518605

Functional Diagram

INPUTS

HCTS138MS

TRUTH TABLE

OUTPUTSENABLE

E3 E2 E1 A2 A1 A0 Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7

XXHXXXHHHHHHHH

LXXXXXHHHHHHHH

XHXXXXHHHHHHHH

HLLLLLLHHHHHHH

HLLLLHHLHHHHHH

HLLLHLHHLHHHHH

HLLLHHHHHLHHHH

HLLHLLHHHHLHHH

HLLHLHHHHHHLHH

HL LHHLHHHHHHLH

HLLHHHHHHHHHHL

H = High Level, L = Low Level, X = Don’t Care

511

Spec Number 518605

Speciﬁcations HCTS138MS

Absolute Maximum Ratings Reliability Information

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classiﬁcation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..

Operating Conditions

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . .500ns Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W

If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.7mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.8mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . VCC/2 to VCC

(NOTE 1)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current (Sink)

Output Current (Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 2.25V,

Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,

Input Leakage Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC -0.4V, VIL = 0V

IOL = 50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V, IOL = 50µA, VIL = 0.8V

IOH = -50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V, IOH = -50µA, VIL = 0.8V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-40µA

2, 3 +125oC, -55oC - 750 µA

1 +25oC 7.2 - mA

2, 3 +125oC, -55oC 6.0 - mA

1 +25oC -7.2 - mA

2, 3 +125oC, -55oC -6.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Noise Immunity Functional Test

NOTES:

1. All voltages reference to device GND.

2. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V, VIH = 2.25V,

VIL = 0.8V, (Note 2)

7, 8A, 8B +25oC, +125oC, -55oC---

512

Spec Number 518605

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