Intersil Corporation HCTS11MS Datasheet

November 1994

HCTS11MS

Radiation Hardened

Triple 3-Input AND Gate

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K or 1 Mega-RAD (Si)

10

• Dose Rate Upset >10

RAD(Si)/s 20ns Pulse

• Latch-Up Free Under Any Conditions

o

• Military Temperature Range: -55

C to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• LSTTL Input Compatibility

- VIL = 0.8V Max.

- VIH = VCC/2 Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCTS11MS is a Radiation Hardened Triple 3­Input AND Gate. A high on all inputs forces the output to a
High state.

The HCTS11MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCTS11MS is supplied in a 14 lead Weld Seal Ceramic
flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line
Package (D suffix).

Pinouts

14 PIN CERAMIC DUAL-IN-LINE

MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C

TOP VIEW

A1

1
2

B1

3

A2

4

B2

5

C2

6

Y2

7

GND

14 PIN CERAMIC FLAT PACK

MIL-STD-1835 DESIGNATOR CDFP3-F14, LEAD FINISH C

TOP VIEW

1A1
B1
A2
B2
C2
Y2

GND

2

3

4

5

6

7

14

VCC

13

C1

12

Y1

11

C3

10

B3

9

A3

8

Y3

14
13

12
11
10

9
8

VCC
C1
Y1
C3
B3
A3
Y3

Truth Table

INPUTS OUTPUTS

An Bn Cn Yn

LLL L
LLH L
LHL L

LHH L
HLL L
HLH L
HHL L
HHH H

NOTE: L = Logic Level Low, H = Logic level High

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com

| Copyright © Intersil Corporation 1999

Functional Diagram

An

Bn Yn

Cn

7-141

File Number

2409.1

Specifications HCTS11MS

Absolute Maximum Ratings Reliability Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to 7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.

Operating Conditions

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . 100ns/V Max.

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Impedance . . . . . . . . . . . . . . . . θ

Weld Seal DIC. . . . . . . . . . . . . . . . . . . 75oC/W 16oC/W

Weld Seal Flat Pack . . . . . . . . . . . . . . 64oC/W 12oC/W

Power Dissipation per Package (PD)

For TA = -55oC to +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

For TA = +100oC to +125oC. . . . . . . .Derate Linearly at 13mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC

ja

θ

jc

GROUP

(NOTE 1)

PARAMETERS SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current
(Sink)

Output Current
(Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 2.25V,

Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,

Input Leakage
Current

Noise Immunity
Functional Test

NOTE:

1. All voltages reference to device GND.

2. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

FN VCC = 4.5V, VIH = 2.25V,

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC -0.4V,
VIL = 0V

IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,

IOL = 50µA, VIL = 0.8V

IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,

IOH = -50µA, VIL = 0.8V

GND

VIL = 0.8V (Note 2)

A SUB-

GROUPS TEMPERATURE

1 +25oC-10µA

2, 3 +125oC, -55oC - 200 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1 +25oC -4.8 - mA

2, 3 +125oC, -55oC -4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC -0.5 +0.5 µA

2, 3 +125oC, -55oC -5.0 +5.0 µA

7, 8A, 8B +25oC, +125oC, -55oC 4.0 0.5 -

LIMITS

UNITSMIN MAX

-V

-0.1

-V

-0.1

7-142

Specifications HCTS11MS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP

(NOTES 1, 2)

PARAMETER SYMBOL

Input to Output TPHL VCC = 4.5V 9 +25oC 2 18 ns

TPLH VCC = 4.5V 9 +25oC 2 20 ns

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input tr = tf = 3ns, VIL = GND, VIH = 3V.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Capacitance Power
Dissipation

Input Capacitance CIN VCC = Open, f = 1MHz 1 +25oC - 10 pF

Output Transition
Time

NOTES:

1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.

CPD VCC = 5.0V, f = 1MHz 1 +25oC Typical 26 pF

TTHL
TTLH

CONDITIONS

VCC = 4.5V 1 +25oC - 15 ns

A SUB-

GROUPS TEMPERATURE

10, 11 +125oC, -55oC 2 20 ns

10, 11 +125oC, -55oC 2 22 ns

1 +125oC Typical 56 pF

1 +125oC - 10 pF

1 +125oC - 22 ns

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

200K RAD

(NOTES 1, 2)

PARAMETERS SYMBOL

Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.2 - 1.0 mA
Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND,

VOUT = 0.4V

Output Current
(Source)

Output Voltage Low VOL VCC = 4.5V and 5.5V,

Output Voltage High VOH VCC = 4.5V and 5.5V,

Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC-±5-±5 µA
Noise Immunity

Functional Test

IOH VCC = 4.5V, VIN = VCC or GND,

VOUT = VCC -0.4V

VIH = VCC/2, VIL = 0.8V at 200K
RAD, VIL = 0.3V at 1M RAD,
IOL = 50µA

VIH = VCC/2, VIL = 0.8V at 200K
RAD, VIL = 0.3V at 1M RAD,
IOH = -50µA

FN VCC = 4.5V, VIH = 2.25V,

VIL = 0.8V at 200K RAD,
VIL = 0.3V at 1M RAD (Note 3)

CONDITIONS

TEMP-

ERATURE

+25oC 4.0 - 4.0 - mA

+25oC -4.0 - -4.0 - mA

+25oC - 0.1 - 0.1 V

+25oC VCC

+25oC-----

LIMITS

- VCC

-0.1

1M RAD

LIMITS

UNITSMIN MAX MIN MAX

-V

-0.1

7-143