Intersil Corporation HCTS10MS Datasheet
September 1995
HCTS10MS
Radiation Hardened
Triple 3-Input NAND Gate
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
2
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
/mg
-9
Errors/Bit-Day
(Typ)
• Dose Rate Survivability: >1 x 10
10
• Dose Rate Upset >10
RAD (Si)/s 20ns Pulse
12
RAD (Si)/s
• Latch-Up Free Under Any Conditions
o
• Military Temperature Range: -55
C to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
- LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
• Input Current Levels Ii ≤ 5µA at VOL, VOH
Description
The Intersil HCTS10MS is a Radiation Hardened Triple 3-Input
NAND Gate. A high on all inputs forces the output to a Low state.
The HCTS10MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS10MS is supplied in a 14 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
PART
NUMBER
HCTS10DMSR -55oC to +125oC Intersil Class
HCTS10KMSR -55oC to +125oC Intersil Class
HCTS10D/
Sample
HCTS10K/
Sample
HCTS10HMSR +25oC Die Die
TEMPERATURE
RANGE
+25oC Sample 14 Lead SBDIP
+25oC Sample 14 Lead Ceramic
SCREENING
LEVEL PACKAGE
14 Lead SBDIP
S Equivalent
14 Lead Ceramic
S Equivalent
Flatpack
Flatpack
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14, LEAD FINISH C
TOP VIEW
A1
1
2
B1
3
A2
4
B2
5
C2
6
Y2
7
GND
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP3-F14, LEAD FINISH C
TOP VIEW
1A1
B1
A2
B2
C2
Y2
GND
2
3
4
5
6
7
14
VCC
13
C1
12
Y1
11
C3
10
B3
9
A3
8
Y3
14
13
12
11
10
9
8
VCC
C1
Y1
C3
B3
A3
Y3
Functional Diagram
An
(1, 3, 9)
Bn Yn
(2, 4, 10)
Cn
(5, 11, 13)
TRUTH TABLE
INPUTS OUTPUTS
An Bn Cn Yn
LLL H
LLH H
LHL H
LHH H
HLL H
HLH H
HHL H
HHH L
NOTE: L = Logic Level Low, H = Logic level High
(6, 8, 12)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
1
Spec Number
518778
File Number 2434.2
Specifications HCTS10MS
Absolute Maximum Ratings Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . 100ns/V Max
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Thermal Resistance θ
SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.5mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.6mW/oC
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
JA
θ
JC
(NOTE 1)
PARAMETER SYMBOL
Quiescent Current ICC VCC = 5.5V,
Output Current
(Sink)
Output Current
(Source)
Output Voltage Low VOL VCC = 4.5V, VIH = 2.25V,
Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,
Input Leakage
Current
IOL VCC = 4.5V, VIH = 4.5V,
IOH VCC = 4.5V, VIH = 4.5V,
IIN VCC = 5.5V, VIN = VCC or
CONDITIONS
VIN = VCC or GND
VOUT = 0.4V, VIL = 0V
VOUT = VCC -0.4V,
VIL = 0V
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
GND
GROUP
A SUB-
GROUPS TEMPERATURE
1 +25oC-10µA
2, 3 +125oC, -55oC - 200 µA
1 +25oC 4.8 - mA
2, 3 +125oC, -55oC 4.0 - mA
1 +25oC -4.8 - mA
2, 3 +125oC, -55oC -4.0 - mA
1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
1, 2, 3 +25oC, +125oC, -55oC VCC
1, 2, 3 +25oC, +125oC, -55oC VCC
1 +25oC -0.5 +0.5 µA
2, 3 +125oC, -55oC -5.0 +5.0 µA
LIMITS
-V
-0.1
-V
-0.1
UNITSMIN MAX
Noise Immunity
Functional Test
NOTES:
1. All voltages reference to device GND.
2. For functional tests VO ≥4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
FN VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V (Note 2)
7, 8A, 8B +25oC, +125oC, -55oC---
2
Spec Number 518778
Specifications HCTS10MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
(NOTES 1, 2)
PARAMETER SYMBOL
Input to Output TPHL VCC = 4.5V 9 +25oC 2 22 ns
TPLH VCC = 4.5V 9 +25oC 2 20 ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
Capacitance Power
Dissipation
Input Capacitance CIN VCC = 5.0V, f = 1MHz 1 +25oC - 10 pF
Output Transition
Time
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
CPD VCC = 5.0V, f = 1MHz 1 +25oC - 53 pF
TTHL
TTLH
CONDITIONS
VCC = 4.5V 1 +25oC - 15 ns
A SUB-
GROUPS TEMPERATURE
10, 11 +125oC, -55oC 2 24 ns
10, 11 +125oC, -55oC 2 22 ns
1 +125oC, -55oC - 71 pF
1 +125oC, -55oC - 10 pF
1 +125oC, -55oC - 22 ns
LIMITS
UNITSMIN MAX
LIMITS
UNITSMIN MAX
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
(NOTES 1, 2)
PARAMETER SYMBOL
Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.2 mA
Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
Output Current (Source) IOH VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = VCC/2,
VIL = 0.8V, IOL = 50µA
Output Voltage High VOH VCC = 4.5Vand 5.5V, VIH = VCC/2V,
VIL = 0.8V, IOH = -50µA
Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC-±5 µA
Noise Immunity
Functional Test
Input to Output TPHL VCC = 4.5V +25oC 2 24 ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
3. For functional tests VO ≥4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
FN VCC = 4.5V, VIH = 2.25V, VIL = 0.8V,
(Note 3)
TPLH +25oC 2 22 ns
CONDITIONS TEMPERATURE
+25oC 4.0 - mA
+25oC -4.0 - mA
+25oC - 0.1 V
+25oC VCC
+25oC ---
LIMITS
UNITSMIN MAX
-V
-0.1
Spec Number 518778
3
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