Intersil Corporation HCTS10MS Datasheet

September 1995

HCTS10MS

Radiation Hardened

Triple 3-Input NAND Gate

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

/mg

-9

Errors/Bit-Day

(Typ)

• Dose Rate Survivability: >1 x 10

• Dose Rate Upset >10

RAD (Si)/s 20ns Pulse

RAD (Si)/s

• Latch-Up Free Under Any Conditions

• Military Temperature Range: -55

C to +125oC

• Signiﬁcant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

- LSTTL Input Compatibility

- VIL = 0.8V Max

- VIH = VCC/2 Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCTS10MS is a Radiation Hardened Triple 3-Input NAND Gate. A high on all inputs forces the output to a Low state.

The HCTS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCTS10MS is supplied in a 14 lead Ceramic ﬂatpack (K sufﬁx) or a SBDIP Package (D sufﬁx).

Ordering Information

PART

NUMBER

HCTS10DMSR -55oC to +125oC Intersil Class

HCTS10KMSR -55oC to +125oC Intersil Class

HCTS10D/ Sample

HCTS10K/ Sample

HCTS10HMSR +25oC Die Die

TEMPERATURE

RANGE

+25oC Sample 14 Lead SBDIP

+25oC Sample 14 Lead Ceramic

SCREENING

LEVEL PACKAGE

14 Lead SBDIP

S Equivalent

14 Lead Ceramic

S Equivalent

Flatpack

Pinouts

14 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T14, LEAD FINISH C

TOP VIEW

1 2

GND

14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP3-F14, LEAD FINISH C

TOP VIEW

1A1 B1 A2 B2 C2 Y2

GND

VCC

14 13

12 11 10

9 8

VCC C1 Y1 C3 B3 A3 Y3

Functional Diagram

(1, 3, 9)

Bn Yn

(2, 4, 10)

(5, 11, 13)

TRUTH TABLE

INPUTS OUTPUTS

An Bn Cn Yn

LLL H LLH H LHL H

LHH H HLL H HLH H HHL H HHH L

NOTE: L = Logic Level Low, H = Logic level High

(6, 8, 12)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207

Spec Number

518778

File Number 2434.2

Speciﬁcations HCTS10MS

Absolute Maximum Ratings Reliability Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classiﬁcation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..

Operating Conditions

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . 100ns/V Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W

If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.5mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.6mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC

(NOTE 1)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current (Sink)

Output Current (Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 2.25V,

Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,

Input Leakage Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC -0.4V, VIL = 0V

IOL = 50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V, IOL = 50µA, VIL = 0.8V

IOH = -50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V, IOH = -50µA, VIL = 0.8V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-10µA

2, 3 +125oC, -55oC - 200 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1 +25oC -4.8 - mA

2, 3 +125oC, -55oC -4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC -0.5 +0.5 µA

2, 3 +125oC, -55oC -5.0 +5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Noise Immunity Functional Test

NOTES:

1. All voltages reference to device GND.

2. For functional tests VO ≥4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V, VIH = 2.25V,

VIL = 0.8V (Note 2)

7, 8A, 8B +25oC, +125oC, -55oC---

Spec Number 518778

Speciﬁcations HCTS10MS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP

(NOTES 1, 2)

PARAMETER SYMBOL

Input to Output TPHL VCC = 4.5V 9 +25oC 2 22 ns

TPLH VCC = 4.5V 9 +25oC 2 20 ns

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Capacitance Power Dissipation

Input Capacitance CIN VCC = 5.0V, f = 1MHz 1 +25oC - 10 pF

Output Transition Time

NOTE:

1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.

CPD VCC = 5.0V, f = 1MHz 1 +25oC - 53 pF

TTHL TTLH

CONDITIONS

VCC = 4.5V 1 +25oC - 15 ns

A SUB-

GROUPS TEMPERATURE

10, 11 +125oC, -55oC 2 24 ns

10, 11 +125oC, -55oC 2 22 ns

1 +125oC, -55oC - 71 pF

1 +125oC, -55oC - 10 pF

1 +125oC, -55oC - 22 ns

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

200K RAD

(NOTES 1, 2)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.2 mA Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND,

VOUT = 0.4V

Output Current (Source) IOH VCC = 4.5V, VIN = VCC or GND,

VOUT = VCC -0.4V

Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = VCC/2,

VIL = 0.8V, IOL = 50µA

Output Voltage High VOH VCC = 4.5Vand 5.5V, VIH = VCC/2V,

VIL = 0.8V, IOH = -50µA Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC-±5 µA Noise Immunity

Functional Test Input to Output TPHL VCC = 4.5V +25oC 2 24 ns

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.

3. For functional tests VO ≥4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V, VIH = 2.25V, VIL = 0.8V,

(Note 3)

TPLH +25oC 2 22 ns

CONDITIONS TEMPERATURE

+25oC 4.0 - mA

+25oC -4.0 - mA

+25oC - 0.1 V

+25oC VCC

+25oC ---

LIMITS

UNITSMIN MAX

-V

-0.1

Spec Number 518778

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