Intersil Corporation HCTS04MS Datasheet

August 1995

HCTS04MS

Radiation Hardened

Hex Inverter

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

/mg

-9

Errors/Bit-Day

(Typ)

• Dose Rate Survivability: >1 x 10

• Dose Rate Upset >10

RAD (Si)/s 20ns Pulse

RAD (Si)/s

• Latch-Up Free Under Any Conditions

• Military Temperature Range: -55

C to +125oC

• Signiﬁcant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• LSTTL Input Compatibility

- VIL = 0.8V Max

- VIH = VCC/2

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCTS04MS is a Radiation Hardened Hex Inverter. A logic level on any input forces the output to the opposite logic state.

The HCTS04MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCTS04MS is supplied in a 14 lead Ceramic ﬂatpack (K sufﬁx) or a SBDIP Package (D sufﬁx).

Pinouts

Y1 A2 Y2 A3 Y3

GND

14 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T14

TOP VIEW

2 3

A2 Y2

4 5

A3 Y3

GND

14 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDFP3-F14

TOP VIEW

1A1 2 3 4 5 6 7

TRUTH TABLE

VCC

12 11

A5 Y5

14 13

12 11 10

9 8

VCC A6 Y6 A5 Y5 A4 Y4

Ordering Information

PART

NUMBER

HCTS04DMSR -55oC to +125oC Intersil Class

HCTS04KMSR -55oC to +125oC Intersil Class

HCTS04D/ Sample

HCTS04K/ Sample

HCTS04HMSR +25oC Die Die

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207

TEMPERATURE

RANGE

+25oC Sample 14 Lead SBDIP

+25oC Sample 14 Lead Ceramic

SCREENING

LEVEL PACKAGE

14 Lead SBDIP

S Equivalent

14 Lead Ceramic

S Equivalent

Flatpack

Functional Diagram

(1, 3, 5, 9, 11, 13)

380

INPUTS OUTPUTS

An Yn

NOTE: L = Logic Level Low,

H = Logic level High

Yn (2, 4, 6, 8, 10, 12)

Spec Number

518776

File Number 2140.2

DB NA

Speciﬁcations HCTS04MS

Absolute Maximum Ratings Reliability Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classiﬁcation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..

Operating Conditions

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . 100ns/V Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W

If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.5mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.6mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC

(NOTE 1)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current (Sink)

Output Current (Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 2.25V,

Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,

Input Leakage Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC -0.4V, VIL = 0V

IOL = 50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V, IOL = 50µA, VIL = 0.8V

IOH = -50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V, IOH = -50µA, VIL = 0.8V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-10µA

2, 3 +125oC, -55oC - 200 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1 +25oC -4.8 - mA

2, 3 +125oC, -55oC -4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Noise Immunity Functional Test

NOTES:

1. All voltages reference to device GND.

2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V, VIH = 2.25V,

VIL = 0.8V (Note 2)

7, 8A, 8B +25oC, +125oC, -55oC---

381

Spec Number 518776

Speciﬁcations HCTS04MS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP

(NOTES 1, 2)

PARAMETER SYMBOL

Input to Yn TPHL VCC = 4.5V 9 +25oC 2 18 ns

Input to Yn TPLH VCC = 4.5V 9 +25oC 2 20 ns

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = RF = 3ns, VIL = GND, VIH = 3V.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Capacitance Power Dissipation

Input Capacitance CIN VCC = 5.0V, f = 1MHz 1 +25oC - 10 pF

CPD VCC = 5.0V, f = 1MHz 1 +25oC - 50 pF

CONDITIONS

VCC = 4.5V 10, 11 +125oC, -55oC 2 20 ns

VCC = 4.5V 10, 11 +125oC, -55oC 2 22 ns

A SUB-

GROUPS TEMPERATURE

1 +125oC, -55oC - 95 pF

LIMITS

UNITSMIN MAX

1 +125oC - 10 pF

Output Transition Time

NOTE:

1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.2 mA

Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND,

Output Current (Source)

Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = VCC/2,

TTHL TTLH

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

VCC = 4.5V 1 +25oC - 15 ns

1 +125oC - 22 ns

(NOTES 1, 2)

CONDITIONS TEMPERATURE

+25oC 4.0 - mA

VOUT = 0.4V

IOH VCC = 4.5V, VIN = VCC or GND,

VOUT = VCC -0.4V

VIL = 0.8V, IOL = 50µA

+25oC -4.0 - mA

+25oC - 0.1 V

200K RAD

LIMITS

UNITSMIN MAX

Output Voltage High VOH VCC = 4.5V and 5.5V, VIH = VCC/2,

VIL = 0.8V, IOH = -50µA

Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC-±5 µA

+25oC VCC

-0.1

-V

Spec Number 518776

382

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