Intersil Corporation HCTS02MS Datasheet

August 1995

HCTS02MS

Radiation Hardened

Quad 2-Input NOR Gate

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD(Si)

2

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

/mg

-9

Errors/Bit-Day

(Typ)

12

• Dose Rate Survivability: >1 x 10

10

• Dose Rate Upset >10

RAD(Si)/s 20ns Pulse

Rads (Si)/s

• Latch-Up Free Under Any Conditions

o

• Military Temperature Range: -55

C to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• LSTTL Input Compatibility

- VIL = 0.8V Max

- VIH = VCC/2 Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCTS02MS is a Radiation Hardened Quad 2-Input
NOR Gate. A low on both inputs forces the output to a High state.

The HCTS02MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.

Pinouts

A1
B1
Y2
A2
B2

GND

14 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T14

TOP VIEW

Y1

1
2

A1

3

B1

4

Y2

5

A2

6

B2

7

GND

14 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDFP3-F14

TOP VIEW

1Y1
2
3
4
5
6
7

14

VCC

13

Y4

12

B4

11

A4

10

Y3

9

B3

8

A3

14
13

12
11
10

9
8

VCC
Y4
B4
A4
Y3
B3
A3

The HCTS02MS is supplied in a 14 lead Ceramic Flatpack Pack­age (K suffix) or a 14 lead SBDIP Package (D suffix).

Ordering Information

PART

NUMBER

HCTS02DMSR -55oC to +125oC Intersil Class

HCTS02KMSR -55oC to +125oC Intersil Class

TEMPERATURE

RANGE

SCREENING

LEVEL PACKAGE

14 Lead SBDIP

S Equivalent

14 Lead Ceramic

S Equivalent

Flatpack

NOTE: L = Logic Level Low, H = Logic level High

Functional Diagram

HCTS02D/
Sample

HCTS02K/
Sample

HCTS02HMSR +25oC Die Die

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

+25oC Sample 14 Lead SBDIP

+25oC Sample 14 Lead Ceramic

Flatpack

| Copyright © Intersil Corporation 1999

1

(2, 5, 8, 11)

(3, 6, 9, 12)

TRUTH TABLE

INPUTS OUTPUTS

An Bn Yn

LLH

LHL
HLL
HHL

An

Yn
(1, 4, 10, 13)

Bn

DB NA

Spec Number 518841

File Number 2137.2

Specifications HCTS02MS

Absolute Maximum Ratings Reliability Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..

Operating Conditions

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . 100ns/V Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W

Maximum Package Power Dissipation at +125oC

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.66W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W

If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.5mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.6mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC

JA

θ

JC

(NOTE 1)

PARAMETERS SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current
(Sink)

Output Current
(Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 2.25V,

Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,

Input Leakage
Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC -0.4V,
VIL = 0V

IOL = 50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V

IOH = -50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-10µA

2, 3 +125oC, -55oC - 200 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1 +25oC -4.8 - mA

2, 3 +125oC, -55oC -4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Noise Immunity
Functional Test

NOTES:

1. All voltages reference to device GND.

2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V,

VIH = 2.25V,
VIL = 0.8V, (Note 2)

7, 8A, 8B +25oC, +125oC, -55oC 4.0 0.5 V

2

Spec Number 518841

Specifications HCTS02MS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP

(NOTES 1, 2)

PARAMETER SYMBOL

Input to Output TPHL VCC = 4.5V 9 +25oC 2 18 ns

TPLH VCC = 4.5V 9 +25oC 2 20 ns

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Capacitance Power
Dissipation

Input Capacitance CIN VCC = 5.0V, f = 1MHz 1 +25oC - 10 pF

Output Transition
Time

NOTE:

1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.

CPD VCC = 5.0V, f = 1MHz 1 +25oC - 45 pF

TTHL
TTLH

CONDITIONS

VCC = 4.5V 1 +25oC - 15 ns

A SUB-

GROUPS TEMPERATURE

10, 11 +125oC, -55oC 2 20 ns

10, 11 +125oC, -55oC 2 22 ns

1 +125oC, -55oC - 68 pF

1 +125oC - 10 pF

1 +125oC - 22 ns

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

(NOTES 1, 2)

PARAMETERS SYMBOL

Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.2 mA
Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V +25oC 4.0 - mA
Output Current

(Source)
Output Voltage Low VOL VCC = 4.5V or 5.5V, VIH = VCC/2,

Output Voltage High VOH VCC = 4.5V or 5.5V, VIH = VCC/2,

Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC -5.0 +5.0 µA
Noise Immunity

Functional Test
Input to Output TPHL VCC = 4.5V +25oC 2 20 ns

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.

3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

IOH VCC = 4.5V, VIN = VCC or GND,

VOUT = VCC -0.4V

VIL = 0.8V at 200K RAD, IOL = 50µA

VIL = 0.8V at 200K RAD, IOH = -50µA

FN VCC = 4.5V, VIH = 2.25V,

VIL = 0.8V at 200K RAD, (Note 3)

TPLH VCC = 4.5V +25oC 2 22 ns

CONDITIONS TEMPERATURE

+25oC -4.0 - mA

+25oC - 0.1 V

+25oC VCC

+25oC ---

200K RAD LIMITS

UNITSMIN MAX

-V

-0.1

Spec Number 518841

3

Specifications HCTS02MS

TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC)

GROUP B

PARAMETER

ICC 5 3µA

IOL/IOH 5 -15% of 0 Hour

TABLE 6. APPLICABLE SUBGROUPS

SUBGROUP DELTA LIMIT

GROUP A SUBGROUPS

COMFORMANCE GROUP MIL-STD-883 METHOD

Initial Test 100% 5004 1, 7, 9 1 (Note 2)

Interim Test 100% 5004 1, 7, 9, ∆ 1, ∆ (Note 2)

PDA 100% 5004 1, 7, ∆

Final Test 100% 5004 2, 3, 8A, 8B, 10, 11

Group A (Note 1) Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11

Subgroup B5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, ∆ 1, 2, 3,∆ (Note 2)

Subgroup B6 Sample 5005 1, 7, 9

Group D Sample 5005 1, 7, 9

NOTES:

1. Alternate Group A testing in accordance with MIL-STD-883 Method 5005 may be exercised.

2. Table 5 parameters only.

TABLE 7. TOTAL DOSE IRRADIATION

TEST READ AND RECORD

CONFORMANCE

GROUPS METHOD

PRE RAD POST RAD PRE RAD POST RAD

TESTED RECORDED

Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9 Table 4 (Note 1)

NOTE:

1. Except FN test which will be performed 100% Go/No-Go.

Spec Number 518841

4