Intersil Corporation HCTS00MS Datasheet

August 1995

HCTS00MS

Radiation Hardened

Quad 2-Input NAND Gate

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

/mg

-9

Errors/Bit-Day

(Typ)

• Dose Rate Survivability: >1 x 10

• Dose Rate Upset >10

RAD (Si)/s 20ns Pulse

• Cosmic Ray Upset Immunity < 2 x 10

RAD (Si)/s

-9

Errors/Gate Day (Typ)

• Latch-Up Free Under Any Conditions

• Military Temperature Range: -55

C to +125oC

• Signiﬁcant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• LSTTL Input Compatibility

- VIL = 0.8V Max

- VIH = VCC/2 Min

• CMOS Input Compatibility Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCTS00MS is a Radiation Hardened Quad 2-Input NAND Gate. A high on both inputs forces the output to a Low state.

The HCTS00MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCTS00MS is supplied in a 14 lead Ceramic ﬂatpack (K sufﬁx) or a SBDIP Package (D sufﬁx).

Ordering Information

PART

NUMBER

HCTS00DMSR -55oC to +125oC Intersil Class

TEMPERATURE

RANGE

SCREENING

LEVEL PACKAGE

14 Lead SBDIP

S Equivalent

Pinouts

14 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T14

TOP VIEW

1 2

GND

14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE

(FLATPACK) MIL-STD-1835 CDFP3-F14

TOP VIEW

1A1 B1 Y1 A2 B2 Y2

GND

An Bn Yn

LLH

LHH HLH HHL

NOTE: L = Logic Level Low, H = Logic level High

2 3 4 5 6 7

TRUTH TABLE

INPUTS OUTPUTS

VCC

14 13

12 11 10

9 8

VCC B4 A4 Y4 B3 A3 Y3

HCTS00KMSR -55oC to +125oC Intersil Class

S Equivalent

HCTS00D/ Sample

HCTS00K/ Sample

HCTS00HMSR +25oC Die Die

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207

+25oC Sample 14 Lead SBDIP

+25oC Sample 14 Lead Ceramic

14 Lead Ceramic Flatpack

Flatpack

370

Functional Diagram

(1, 4, 9, 12)

(2, 5, 10, 13)

Yn (3, 6, 8, 11)

Spec Number

518774

File Number 2139.2

DB NA

Speciﬁcations HCTS00MS

Absolute Maximum Ratings Reliability Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classiﬁcation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..

Operating Conditions

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . 100ns/V Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W

If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.5mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.6mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC

(NOTE 1)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current (Sink)

Output Current (Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 2.25V,

Output Voltage High VOH VCC = 4.5V, VIH = 2.25V,

Input Leakage Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC -0.4V, VIL = 0V

IOL = 50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V, IOL = 50µA, VIL = 0.8V

IOH = -50µA, VIL = 0.8V

VCC = 5.5V, VIH = 2.75V, IOH = -50µA, VIL = 0.8V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-10µA

2, 3 +125oC, -55oC - 200 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1 +25oC -4.8 - mA

2, 3 +125oC, -55oC -4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Noise Immunity Functional Test

NOTES:

1. All voltages reference to device GND.

2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V,

VIH = 2.25, VIL = 0.80 (Note 2)

7, 8A, 8B +25oC, +125oC, -55oC---

371

Spec Number 518774

Speciﬁcations HCTS00MS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP

(NOTES 1, 2)

PARAMETER SYMBOL

Input to Yn TPHL VCC = 4.5V 9 +25oC 2 18 ns

Input to Yn TPLH VCC = 4.5V 9 +25oC 2 20 ns

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Capacitance Power Dissipation

Input Capacitance CIN VCC = 5.0V, f = 1MHz 1 +25oC - 10 pF

Output Transition Time

NOTE:

1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics..

CPD VCC = 5.0V, f = 1MHz 1 +25oC - 38 pF

TTHL TTLH

CONDITIONS

VCC = 4.5V 10, 11 +125oC, -55oC 2 20 ns

VCC = 4.5V 10, 11 +125oC, -55oC 2 22 ns

VCC = 4.5V 1 +25oC - 15 ns

A SUB-

GROUPS TEMPERATURE

1 +125oC, -55oC - 72 pF

1 +125oC - 10 pF

1 +125oC - 22 ns

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

200K RAD

(NOTES 1, 2)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.2 mA Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V +25oC 4.0 - mA Output Current

(Source) Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = VCC/2,

Output Voltage High VOH VCC = 4.5V and 5.5V, VIH = VCC/2,

Input Leakage Current

Noise Immunity Functional Test

Input to Yn TPHL VCC = 4.5V +25oC 2 20 ns

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.

3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

IOH VCC = 4.5V, VIN = VCC or GND,

VOUT = VCC -0.4V

VIL = 0.80V, IOL = 50µA

VIL = 0.80V, IOL = -50µA

IIN VCC = 5.5V, VIN = VCC or GND +25oC-±5 µA

FN VCC = 4.5V, VIH = 2.25V,

VIL = 0.80V, (Note 3)

TPLH VCC = 4.5V +25oC 2 22 ns

CONDITIONS TEMPERATURE

+25oC -4.0 - mA

+25oC - 0.1 V

+25oC VCC

+25oC ---

LIMITS

UNITSMIN MAX

-V

-0.1

372

Spec Number 518774

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