Intersil Corporation HCS245MS Datasheet

December 1992

HCS245MS

Radiation Hardened

Octal Bus Transceiver, Three-State, Non-Inverting

Features

• 3 Micron Radiation Hardened CMOS SOS

• Total Dose 200K or 1 Mega-RAD(Si)

• Latch-Up Free Under Any Conditions

• Fanout (Over Temperature Range)

- Bus Driver Outputs - 15 LSTTL Loads

o

• Military Temperature Range: -55

C to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• LSTTL Input Compatibility

- VIL = 0.8V Max

- VIH = VCC/2 Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCS245MS is a Radiation Hardened Non-Invert­ing Octal Bidirectional Bus Transceiver, Three-State,
intended for two-way asynchronous communication between
data busses. The HCS245MS allows data transmission from
the A bus to the B bus or from the B bus to the A bus. The
logic level at the direction input (DIR) determines the data
direction. The output enable input (
the high-impedance state when high.

The HCS245MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCS245MS is supplied in a 20 lead Weld Seal Ceramic
flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line
Package (D suffix).

OE) puts the I/O port in

Pinouts

20 PIN CERAMIC DUAL-IN-LINE

MIL-STD-1835 DESIGNATOR CDIP2-T20, LEAD FINISH C

TOP VIEW

1

DIR

2

A0

3

A1

4

A2

5

A3

6

A4

7

A5

8

A6

9

A7

10

GND

20 PIN CERAMIC FLAT PACK

MIL-STD-1835 DESIGNATOR CDFP4-F20, LEAD FINISH C

TOP VIEW

DIR

A0
A1
A2
A3
A4
A5
A6
A7

GND

120
2
3
4
5
6
7
8
9
10

20

VCC

19

OE

18

B0

17

B1

16

B2

15

B3

14

B4

13

B5

12

B6

11

B7

19
18
17
16
15
14
13
12
11

VCC
OE
B0
B1
B2
B3
B4
B5
B6
B7

Truth Table

CONTROL

INPUTS

OPERATIONOE DIR

L L B Data to A Bus

L H A Data to B Bus

H X Isolation

H = High Voltage Level, L = Low Voltage Level,
X = Immaterial

To prevent excess currents in the High-Z (Isolation)
modes, all I/O terminals should be terminated with 10kΩ
to 1MΩ resistors.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

Functional Diagram

ONE OF 8 TRANSCEIVERS

B DATA

11

(18, 17, 16, 15,

14, 13, 12)

DIR

1

OUTPUT
ENABLE

19

7-475

TO OTHER
7 BUFFERS

File Number

A DATA

9
(2, 3, 4, 5,

6, 7, 8)

2468.1

Specifications HCS245MS

Absolute Maximum Ratings Reliability Information

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG). . . . . . . . . . . -65

o

C to +150oC

Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.

Operating Conditions

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . . 500ns Max.

Operating Temperature Range (T

) . . . . . . . . . . . . -55oC to +125oC

A

TABLE 1. DC. ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Impedance . . . . . . . . . . . . . . . . θ

Weld Seal DIC. . . . . . . . . . . . . . . . . . . 75oC/W 16oC/W

Weld Seal Flat Pack . . . . . . . . . . . . . . 64

ja

o

C/W 12oC/W

Power Dissipation per Package (PD)

For T

= -55oC to +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

A

= +100oC to +125oC Derate Linearly at 13mW/oC

For T

o

C

A

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . 70% of VCC to VCC

θ

jc

GROUP

(NOTE 1)

PARAMETERS SYMBOL

CONDITIONS

Quiescent Current ICC VCC = 5.5V,

VIN = VCC or GND

Output Current
(Sink)

Output Current
(Source)

IOL VCC = 4.5V, VIH = 4.5V,

VOUT = 0.4V, VIL = 0V

IOH VCC = 4.5V, VIH = 4.5V,

VOUT = VCC -0.4V,
VIL = 0V

Output Voltage Low VOL VCC = 4.5V, VIH = 3.15V,

A SUB-

GROUPS TEMPERATURE

1 +25

o

C-40µA

2, 3 +125oC, -55oC - 750 µA

1 +25oC 7.2 - mA

2, 3 +125oC, -55oC 6.0 - mA

1 +25oC 7.2 - mA

2, 3 +125oC, -55oC 6.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

IOL = 50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

IOL = 50µA, VIL = 1.65V

Output Voltage High VOH VCC = 4.5V, VIH = 3.15V,

1, 2, 3 +25oC, +125oC, -55oC VCC

IOH = -50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,

1, 2, 3 +25oC, +125oC, -55oC VCC

IOH = -50µA, VIL = 1.65V

Input Leakage
Current

Three-State Output
Leakage Current

Noise Immunity
Functional Test

IIN VCC = 5.5V, VIN = VCC or

GND, VCC = 4.5V and

5.5V

IOZ Applied Voltage = 0V or

VCC

FN VCC = 4.5V,

VIH = 0.70(VCC),

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

1 +25oC-±1 µA

2, 3 +125oC, -55oC-±50 µA

7, 8A, 8B +25oC, +125oC, -55oC---

VIL = 0.30(VCC) (Note 2)

NOTE:

1. All voltages reference to device GND.

2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

LIMITS

UNITSMIN MAX

-V

-0.1

-V

-0.1

7-476

Specifications HCS245MS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP

(NOTES 1, 2)

PARAMETER SYMBOL

Propagation Delay
Data to Output

Enable to Output TPZL

Disable to Output TPLZ

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Capacitance Power
Dissipation

Input Capacitance CIN VCC = Open, f = 1MHz 1 +25oC - 10 pF

Output Transition
Time

NOTES:

1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.

TPLH
TPHL

TPZH

TPHZ

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

CPD VCC = 5.0V, f = 1MHz 1 +25oC Typical 45 pF

TTHL
TTLH

CONDITIONS

VCC = 4.5V 9 +25oC 2 19 ns

VCC = 4.5V 9 +25oC 2 26 ns

VCC = 4.5V 9 +25oC 2 28 ns

VCC = 4.5V 1 +25oC - 12 ns

A SUB-

GROUPS TEMPERATURE

10, 11 +125oC, -55oC 2 23 ns

10, 11 +125oC, -55oC 2 30 ns

10, 11 +125oC, -55oC 2 33 ns

1 +125oC, -55oC Typical 45 pF

1 +125oC, -55oC - 10 pF

1 +125oC, -55oC - 18 ns

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

200K RAD

(NOTES 1, 2)

PARAMETERS SYMBOL

Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.75 - 3.75 mA
Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND,

VOUT = 0.4V

Output Current
(Source)

Output Voltage Low VOL VCC = 4.5V and 5.5V,

Output Voltage High VOH VCC = 4.5V and 5.5V,

Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC-±5-±5 µA
Three-State Output

Leakage Current

IOH VCC = 4.5V, VIN = VCC or GND,

VOUT = VCC -0.4V

VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD,
IOL = 50µA

VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD,
IOH = -50µA

IOZ Applied Voltage = 0V or VCC +25oC-±50 - ±100 µA

CONDITIONS

TEMP-

ERATURE

+25oC 6.0 - 5.0 - mA

+25oC -6.0 - -5.0 - mA

+25oC - 0.1 - 0.1 V

+25oC VCC

LIMITS

- VCC

-0.1

1M RAD

LIMITS

UNITSMIN MAX MIN MAX

-V

-0.1

7-477