Intersil Corporation HCS244MS Datasheet

September 1995

HCS244MS

Radiation Hardened

Octal Buffer/Line Driver, Three-State

Features

• 3 Micron Radiation Hardened CMOS SOS

• Total Dose 200K RAD (Si)/s

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

/mg

-9

Errors/

Bit-Day (Typ)

• Dose Rate Survivability: >1 x 10

• Dose Rate Upset >10

RAD (Si)/s 20ns Pulse

RAD (Si)/s

• Latch-Up Free Under Any Conditions

• Fanout (Over Temperature Range)

- Bus Driver Outputs - 15 LSTTL Loads

• Military Temperature Range: -55

C to +125oC

• Signiﬁcant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

- VIL = 0.3 VCC Max

- VIH = 0.7 VCC Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCS244MS is a Radiation Hardened NonInverting Octal Buffer/Line Driver, Three-State, with two active-low output enables.

The HCS244MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCS244MS is supplied in a 20 lead Ceramic ﬂatpack (K sufﬁx) or a SBDIP Package (D sufﬁx).

Pinouts

GND

20 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T20

TOP VIEW

A0 Y3 A1 Y2 A2 Y1 A3 Y0

GND

VCC

20 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDFP4-F20

TOP VIEW

120 2 3 4 5 6 7 8 9 10

19 18 17 16 15 14 13 12 11

VCC OE

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

HCS244DMSR -55oC to +125oC Intersil Class S Equivalent 20 Lead SBDIP

HCS244KMSR -55oC to +125oC Intersil Class S Equivalent 20 Lead Ceramic Flatpack

HCS244D/Sample +25oC Sample 20 Lead SBDIP

HCS244K/Sample +25oC Sample 20 Lead Ceramic Flatpack

HCS244HMSR +25oC Die Die

312

Spec Number

File Number 2132.2

DB NA

518763

Functional Diagram

HCS244MS

1Y0 1Y1 1Y2 1Y3 2Y0 2Y1 2Y2 2Y3

NPNPNPNPPNPNPNPN

357912141618

1OE

2 4 6 8 11 13 15

1A0 1A1 1A2 1A3 2A0 2A1 2A2 2A3

TRUTH TABLE

INPUTS OUTPUT

1OE, 2OE A Y

LLL

LHH

HXZ

H = High Voltage Level L = Low Voltage Level X = Immaterial Z = High Impedance

2OE

313

Spec Number 518763

Speciﬁcations HCS244MS

Absolute Maximum Ratings Reliability Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classiﬁcation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..

Operating Conditions

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . . .500ns Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 72oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 107oC/W 28oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.69W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W

If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.9mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .9.3mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . 70% of VCC to VCC

(NOTE 1)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current (Sink)

Output Current (Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 3.15V,

Output Voltage High VOH VCC = 4.5V, VIH = 3.15V,

Input Leakage Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC -0.4V, VIL = 0V

IOL = 50µA, VIL = 1.35V

VCC = 5.5V, VIH = 3.85V, IOL = 50µA, VIL = 1.65V

IOH = -50µA, VIL = 1.35V

VCC = 5.5V, VIH = 3.85V, IOH = -50µA, VIL = 1.65V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-40µA

2, 3 +125oC, -55oC - 750 µA

1 +25oC 7.2 - mA

2, 3 +125oC, -55oC 6.0 - mA

1 +25oC -7.2 - mA

2, 3 +125oC, -55oC -6.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Three-State Output Leakage Current

Noise Immunity Functional Test

NOTES:

1. All voltages reference to device GND.

2. For functional tests, VO ≥4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

IOZ Applied Voltage = 0V or

VCC, VCC = 5.5V

FN VCC = 4.5V,

VIH = 0.70(VCC), VIL = 0.30(VCC) (Note 2)

1 +25oC-±1 µA

2, 3 +125oC, -55oC-±50 µA

7, 8A, 8B +25oC, +125oC, -55oC---

314

Spec Number 518763

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