Intersil Corporation HCS241MS Datasheet

September 1995

HCS241MS

Radiation Hardened Inverting

Octal Three-State Buffer/Line Driver

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD (Si)

2

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

/mg

-9

Errors/

Bit-Day (Typ)

• Dose Rate Survivability: >1 x 10

10

• Dose Rate Upset >10

RAD (Si)/Sec. 20ns Pulse

12

RAD (Si)/s

• Latch Up Free Under Any Conditions

o

• Military Temperature Range: -55

C to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

- VIL = 30% VCC Max

- VIH = 70% VCC Min

• Input Compatibility Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCS241MS is a Radiation Hardened inverting
octal three-state buffer/line driver with two output enables,
one active low, and one active high.

The HCS241MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCS241MS is supplied in a 20 lead ceramic flatpack
(K suffix) or a SBDIP package (D suffix).

Pinouts

AE

AI1

BO4

AI2

BO3

AI3

BO2

AI4

BO1

GND

20 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T20, LEAD FINISH C

TOP VIEW

1

AE

2

AI1

3

BO4

4

AI2

5

BO3

6

AI3

7

BO2

8

AI4

9

BO1

10

GND

20 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDFP4-F20, LEAD FINISH C

TOP VIEW

120
2
3
4
5
6
7
8
9
10

20

VCC

19

BE

18

AO1

17

BI4

16

AO2

15

BI3

14

AO3

13

BI2

12

AO4

11

BI1

19
18
17
16
15
14
13
12
11

VCC
BE
AO1
BI4
AO2
BI3
AO3
BI2
AO4
BI1

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

HCS241DMSR -55oC to +125oC Intersil Class S Equivalent 20 Lead SBDIP

HCS241KMSR -55oC to +125oC Intersil Class S Equivalent 20 Lead Ceramic Flatpack

HCS241D/Sample +25oC Sample 20 Lead SBDIP

HCS241K/Sample +25oC Sample 20 Lead Ceramic Flatpack

HCS241HMSR +25oC Die Die

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

302

Spec Number

File Number 3122.1

518838

Functional Diagram

HCS241MS

AO1 AO2 AO3 AO4 BO1 BO2 BO3 BO4

NPNPNPNPPNPNPNPN

1

AE

2 4 6 8 11 13 15

AI1 AI2 AI3 AI4 BI1 BI2 BI3 BI4

TRUTH TABLE

INPUTS OUTPUT INPUTS OUTPUT

AE AIn AOn BE BIn BOn

LLLLXZ

LHHHLL

357912141618

19

BE

17

HXZHHH

H = High Voltage Level
L = Low Voltage Level
X = Immaterial
Z = High Impedance

303

Spec Number 518838

Specifications HCS241MS

Absolute Maximum Ratings Reliability Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±35mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.

Operating Conditions

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . 100ns/V Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 72oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 107oC/W 28oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.69W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W

If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.9mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .9.3mW/oC

Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40 Gates

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . VCC to 70% of VCC

JA

θ

JC

PARAMETER SYMBOL CONDITIONS

Supply Current ICC VCC = 5.5V,

VIN = VCC or GND

Output Current (Sink) IOL VCC = VIH = 4.5V,

VOUT = 0.4V,
VIL = 0 (Note 2)

Output Current
(Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 3.15V,

Output Voltage High VOH VCC = 4.5V, VIH = 3.15V,

Input Leakage
Current

IOH VCC = VIH = 4.5V,

VOUT = VCC - 0.4V,
VIL = 0 (Note 2)

VIL = 1.35V, IOL = 50µA
VCC = 5.5V, VIH = 3.85V,

VIL = 1.65V, IOL = 50µA

VIL = 1.35V, IOH = -50µA
VCC = 5.5V, VIH = 3.85V,

VIL = 1.35V, IOH = -50µA

IIN VCC = 5.5V

VIN = VCC or GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-40µA

2, 3 +125oC, -55oC - 750

1 +25oC 7.2 - mA

2, 3 +125oC, -55oC 6.0 -

1 +25oC -7.2 - mA

2, 3 +125oC, -55oC -6.0 -

1, 2, 3 +25oC, +125oC,

-55oC

1, 2, 3 +25oC, +125oC,

-55oC

1, 2, 3 +25oC, +125oC,

-55oC

1, 2, 3 +25oC, +125oC,

-55oC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0

LIMITS

- 0.1 V

- 0.1 V

VCC-

0.1

VCC-

0.1

-V

-V

UNITSMIN MAX

Three-State Output
Leakage Current

Noise Immunity
Functional Test

NOTES:

1. All voltages referenced to device GND.

2. Force/Measure function may be interchanged.

3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

IOZ VCC = 5.5V, Force

Voltage = 0V or VCC

FN VCC = 4.5V, VIH = 3.15V,

VIL = 1.35V (Note 3)

1 +25oC-±1.0 µA

2, 3 +125oC, -55oC-±50

7, 8A, 8B +25oC, +125oC,

-55oC

304

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Spec Number 518838