Intersil Corporation HCS240MS Datasheet
September 1995
HCS240MS
Radiation Hardened
Octal Buffer/Line Driver, Three-State
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
2
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
/mg
-9
Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 10
10
• Dose Rate Upset >10
RAD (Si)/s 20ns Pulse
12
RAD (Si)/s
• Latch-Up Free Under Any Conditions
o
• Military Temperature Range: -55
C to +125oC
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current Levels Ii ≤ 5µA at VOL, VOH
Description
The Intersil HCS240MS is a Radiation Hardened Inverting
Octal Buffer/Line Driver, Three-State, with two active-low
output enables.
The HCS240MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS240MS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Pinouts
AE
AI1
BO4
AI2
BO3
AI3
BO2
AI4
BO1
GND
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20, LEAD FINISH C
TOP VIEW
1
AE
2
AI1
3
BO4
4
AI2
5
BO3
6
AI3
7
BO2
8
AI4
9
BO1
10
GND
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20, LEAD FINISH C
TOP VIEW
120
2
3
4
5
6
7
8
9
10
20
VCC
19
BE
18
AO1
17
BI4
16
AO2
15
BI3
14
AO3
13
BI2
12
AO4
11
BI1
19
18
17
16
15
14
13
12
11
VCC
BE
AO1
BI4
AO2
BI3
AO3
BI2
AO4
BI1
Ordering Information
PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE
HCS240DMSR -55oC to +125oC Intersil Class S Equivalent 20 Lead SBDIP
HCS240KMSR -55oC to +125oC Intersil Class S Equivalent 20 Lead Ceramic Flatpack
HCS240D/Sample +25oC Sample 20 Lead SBDIP
HCS240K/Sample +25oC Sample 20 Lead Ceramic Flatpack
HCS240HMSR +25oC Die Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
1
Spec Number
File Number 3562.1
518837
Functional Diagram
HCS240MS
BO4BO3BO2BO1AO4AO3AO2AO1
357912141618
NPNPNPNPPNPNPNPN
1
2 4 6 8 11 13 15
TRUTH TABLE
INPUTS OUTPUT
AE, BE An Yn
LLH
LHL
HXZ
H = High Voltage Level, L =Low Voltage Level
X = Immaterial, Z =High Impedance
17
BI4BI3BI2BI1AI4AI3AI2 BEAI1AE
19
Spec Number 518837
2
Specifications HCS240MS
Absolute Maximum Ratings Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±35mA
Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
(All Voltage Reference to the VSS Terminal)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range. . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Time at 4.5V VCC (tr, tf) . . . . . . . 100ns/V Max.
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Thermal Resistance θ
SBDIP Package. . . . . . . . . . . . . . . . . . . . 72oC/W 24oC/W
Ceramic Flatpack Package . . . . . . . . . . . 107oC/W 28oC/W
Maximum Package Power Dissipation at +125oC Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.9mW/oC
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .9.3mW/oC
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40 Gates
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC
JA
θ
JC
(NOTE 1)
PARAMETER SYMBOL
Supply Current ICC VCC = 5.5V,
Output Current
(Source)
Output Current
(Sink)
Output Voltage High VOH VCC = 5.5V, VIH = 3.85V,
Output Voltage Low VOL VCC = 5.5V, VIH = 3.85V,
Input Leakage
Current
IOH VCC = 4.5V, VIH = 4.5V,
IOL VCC = 4.5V, VIH = 4.5V,
IIN VCC = 5.5V, VIN = VCC or
CONDITIONS
VIN = VCC or GND
VOUT = VCC -0.4V,
VIL = 0V, (Note 2)
VOUT = 0.4V, VIL = 0V,
(Note 2)
VIL = 1.65V, IOH = -50µA
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50µA
VIL = 1.65V, IOL = 50µA
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50µA
GND
GROUP
A SUB-
GROUPS TEMPERATURE
1 +25oC-40µA
2, 3 +125oC, -55oC - 750 µA
1 +25oC -7.2 - mA
2, 3 +125oC, -55oC -6.0 - mA
1 +25oC 7.2 - mA
2, 3 +125oC, -55oC 6.0 - mA
1, 2, 3 +25oC, +125oC, -55oC VCC
1, 2, 3 +25oC, +125oC, -55oC VCC
1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
1 +25oC-±0.5 µA
2, 3 +125oC, -55oC-±5.0 µA
LIMITS
-V
-0.1
-V
-0.1
UNITSMIN MAX
Three-State Output
Leakage Current
Noise Immunity
Functional Test
NOTES:
1. All voltages reference to device GND.
2. Force/Measure functions may be interchanged.
3. For functional tests, VO ≥4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.
IOZ VCC = 5.5V, Force Voltage
= 0V or VCC
FN VCC = 4.5V,
VIH = 3.15V,
VIL = 1.35V, (Note 3)
1 +25oC-±1 µA
2, 3 +125oC, -55oC-±50 µA
7, 8A, 8B +25oC, +125oC, -55oC- - V
3
Spec Number 518837
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