Intersil Corporation HCS164MS Datasheet

September 1995

HCS164MS

Radiation Hardened

8-Bit Serial-In/Parallel-Out Register

Features

• 3 Micron Radiation Hardened CMOS SOS

• Total Dose 200K RAD (Si)

2

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

/mg

-9

Errors/

Bit-Day (Typ)

• Dose Rate Survivability: >1 x 10

10

• Dose Rate Upset >10

RAD (Si)/s 20ns Pulse

12

RAD (Si)/s

• Latch-Up-Free Under Any Conditions

• Fanout (Over Temperature Range)

- Standard Outputs - 10 LSTTL Loads

• Military Temperature Range: -55

o

C to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

- VIL = 0.3 VCC Max

- VIH = 0.7 VCC Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCS164MS is a Radiation Hardened 8-bit
Serial-In/Parallel-Out Shift Register that has fully synchro­nous serial data entry and an asynchronous master reset.

The HCS164MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.

Pinouts

DS1
DS2

Q0
Q1
Q2
Q3

GND

14 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T14, LEAD FINISH C

TOP VIEW

DS1

1
2

DS2

3

Q0

4

Q1

5

Q2

6

Q3

7

GND

14 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDFP3-F14, LEAD FINISH C

TOP VIEW

1
2
3
4
5
6
7

14

VCC

13

Q7

12

Q6

11

Q5

10

Q4
MR

9
8

CP

14
13

12
11
10

9
8

VCC
Q7
Q6
Q5
Q4
MR
CP

The HCS164MS is supplied in a 14 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

HCS164DMSR -55oC to +125oC Intersil Class S Equivalent 14 Lead SBDIP

HCS164KMSR -55oC to +125oC Intersil Class S Equivalent 14 Lead Ceramic Flatpack

HCS164D/Sample +25oC Sample 14 Lead SBDIP

HCS164K/Sample +25oC Sample 14 Lead Ceramic Flatpack

HCS164HMSR +25oC Die Die

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

230

Spec Number

File Number 2465.2

518756

Functional Diagram

9

MR

HCS164MS

CP

D1

D2

8

1

2

CL

R

D

Q

R

CL

D

Q

3 4 5 6 10 11 12 13

Q0

R

CL

D

Q

Q1 Q2 Q3 Q4 Q5 Q6 Q7

CL

R

D

Q

CL

D

R

Q

CL

R

D

Q

CL

R

CL

D

D

Q

TRUTH TABLE

INPUTS OUTPUTS

OPERATING MODE

MR CP DS1 DS2 Q0 Q1-Q7

Reset (Clear) L X X X L L-L

Shift H l l L q0 -q6

H l h L q0 - q6

H h l L q0 - q6

R

Q

H h h H q0 - q6

H = High Voltage Level
h = HIGH voltage level one setup time prior to the LOW-to-HIGH clock transistion
L = Low VoltageLevel
l = LOW voltage level one setup time prior to the LOW-to-HIGH clock transition.

= LOW-to-HIGH clock transition

q = Lower case letters indicate the state of the referenced input (or output) one setup time prior to the LOW-to-HIGH clock transition

231

Spec Number 518756

Specifications HCS164MS

Absolute Maximum Ratings Reliability Information

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..

Operating Conditions

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5 VCC (TR, TF) . . . . . . . .500ns Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W

If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.5mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.6mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . 70% of VCC to VCC

JA

θ

JC

(NOTE 1)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current
(Sink)

Output Current
(Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 3.15V,

Output Voltage High VOH VCC = 4.5V, VIH = 3.15V,

Input Leakage
Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC -0.4V,
VIL = 0V

IOL = 50µA, VIL = 1.35V

VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V

IOH = -50µA, VIL = 1.35V

VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-40µA

2, 3 +125oC, -55oC - 750 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1 +25oC -4.8 - mA

2, 3 +125oC, -55oC -4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Noise Immunity
Functional Test

NOTES:

1. All voltages reference to device GND.

2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V,

VIH = 0.70(VCC),
VIL = 0.30(VCC) (Note 2)

7, 8A, 8B +25oC, +125oC, -55oC---

232

Spec Number 518756