Intersil Corporation HCS160MS Datasheet

September 1995

HCS160MS

Radiation Hardened

BCD Decade Synchronous Counter

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

2

/mg

-9

Errors/Bit-Day

(Typ)

• Dose Rate Survivability: >1 x 10

• Dose Rate Upset: >10

10

RAD (Si)/s 20ns Pulse

12

RAD (Si)/s

• Latch-Up Free Under Any Conditions

• Fanout (Over Temperature Range)

-Standard Outputs: 10 LSTTL Loads

-Bus Driver Outputs: 15 LSTTL Loads

• Military Temperature Range: -55

o

C to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

-VIL = 30% of VCC Max

-VIH = 70% of VCC Min

• Input Current Levels Ii ≤ 5µA @ VOL, VOH

Description

The Intersil HCS160MS is a Radiation Hardened high speed
presettable BCD decade synchronous counter that features an
asynchronous reset and look-ahead carry logic. Counting and
parallel presetting are accomplished synchronously with the low­to-high transition of the clock. A low level on the synchronous
parallel enable input,
the preset inputs, P0 - P3, to be loaded into the counter. The
counter is reset by a low on the master reset input,
enables, PE and TE are provided for n-bit cascading. TE also
controls the terminal count output, TC. The terminal count output
indicates a maximum count for one clock pulse and is used to
enable the next cascaded stage to count.

SPE, disables counting and allows data at

MR. Two count

Pinouts

16 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T16, LEAD FINISH C

TOP VIEW

1

MR

2

CP

3

P0

4

P1

5

P2

6

P3

7

PE

8

GND

16 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDFP4-F16, LEAD FINISH C

TOP VIEW

MR

CP

P0
P1
P2
P3

PE

GND

116
2
3
4
5
6
7
8

16

VCC
TC

15
14

Q0

13

Q1

12

Q2
Q3

11
10

TE

9

SPE

VCC
15
14
13
12
11
10

9

TC

Q0

Q1

Q2

Q3

TE

SPE

The HCS160MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCS160MS is supplied in a 16 lead Ceramic flatpack (K suffix)
or a SBDIP Package (D suffix.)

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

HCS160DMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead SBDIP
HCS160KMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead Ceramic Flatpack
HCS160D/Sample +25oC Sample 16 Lead SBDIP
HCS160K/Sample +25oC Sample 16 Lead Ceramic Flatpack
HCS160HMSR +25oC Die Die

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

183

Spec Number

File Number 2296.2

DB NA

518834

Functional Block Diagram

3456

SPE

MR

MR
D0
T0
CP

Q3 Q0 Q3 Q0

P

Q0
Q0

CP

PE

TE

HCS160MS

Q2 Q3

MR

P
D1
T1

Q1

CP

Q0 Q1

MR
D2
T2
CP

Q2

P

Q0Q1Q2

Q0 Q3

P3P2P1P0

Q3
Q0

P

Q3 Q3

MR
D3
T3
CP

GND VCC

168

14 15

Q0

TC

Q1

13

Q0

12

11

Q1

TRUTH TABLE

INPUTS OUTPUTS

OPERATING MODE

MR CP PE TE SPE Pn Qn TC

Reset (Clear) L XXXXXLL

Parallel Load H X X l l L L

H X X l h H (Note 1)

Count H h h h (Note 3) X Count (Note 1)

Inhibit H X l (Note 2) X h (Note 3) X qn (Note 1)

H X X l (Note 2) h (Note 3) X qn L

H = HIGH Voltage Level
L = LOW Voltage Level
h = HIGH voltage level one setup time prior to the LOW-to-HIGH clock transition
l = LOW voltage level one setup time prior to the LOW-to-HIGH clock transition
X = Immaterial
q = Lower case letterindicate the state of the referenced output prior to the LOW-to-HIGH clock transition

= LOW-to-HIGH clock transition

NOTES:

1. The TC output is HIGH when TE is HIGH and the counter is at terminal count (HHHH for 161 and HLLH for 160)

2. The HIGH-to-LOW transition of PE or TE on the 54/74161 and 54/74160 should only occur while CP is high for conventional operation

3. The LOW-to-HIGH transition of SPE on the 54/74161 and 54/74160 should only occur while CP is high for conventional operation

Spec Number 518834

184

Specifications HCS160MS

Absolute Maximum Ratings Reliability Information

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.

Operating Conditions

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . . .100ns Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W

If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.7mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.8mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . 70% of VCC to VCC

JA

θ

JC

(NOTE 1)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current
(Sink)

Output Current
(Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 3.15V,

Output Voltage High VOH VCC = 4.5V, VIH = 3.15V,

Input Leakage
Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC - 0.4V,
VIL = 0V

IOL = 50µA, VIL = 1.35V

VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V

IOH = -50µA, VIL = 1.35V

VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-40µA

2, 3 +125oC, -55oC - 750 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1 +25oC -4.8 - mA

2, 3 +125oC, -55oC -4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Noise Immunity
Functional Test

NOTES:

1. All voltages referenced to device GND.

2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V, VIH = 3.15V,

VIL = 1.35V, (Note 2)

7, 8A, 8B +25oC, +125oC, -55oC---

185

Spec Number 518834