Intersil Corporation HCS157MS Datasheet

September 1995

HCS157MS

Radiation Hardened

Quad 2-Input Multiplexers

Features

• 3 Micron Radiation Hardened CMOS SOS

• Total Dose 200K RAD (Si)

2

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

/mg

-9

Errors/Bit-Day

(Typ)

12

• Dose Rate Survivability: >1 x 10

10

• Dose Rate Upset >10

RAD (Si)/s, 20ns Pulse

RAD (Si)/s

• Latch-Up Free Under Any Conditions

o

• Military Temperature Range: -55

C to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

- VIL = 30% of VCC Max

- VIH = 70% of VCC Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCS157MS is a Radiation Hardened quad 2-input
multiplexers which select four bits of data from two sources under
the control of a common select input (S). The Enable input (E
NOT) is active low. When the enable pin is high all of the outputs
(1Y-4Y) are forced low regardless of all other input conditions.

Moving data from two groups of registers to four common output
busses is a common use of these devices. The state of the Select
input determines the particular register from which the data comes.
They can also be used as function generators.

Pinouts

16 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T16, LEAD FINISH C

TOP VIEW

1

S

2

1I0
1I1

3

1Y

4
5

2I0

6

2I1

7

2Y

8

GND

16 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDFP4-F16, LEAD FINISH C

TOP VIEW

S
1I0
1I1

1Y
2I0
2I1

2Y

GND

116
2
3
4
5
6
7
8

VCC

16
15

E
4I0

14

4I1

13

4Y

12

3I0

11

3I1

10

3Y

9

VCC
15
14
13
12
11
10

9

E

4I0

4I1

4Y

3I0

3I1

3Y

The HCS157MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of radia­tion hardened, high-speed, CMOS/SOS Logic Family.

The HCS157MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

HCS157DMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead SBDIP

HCS157KMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead Ceramic Flatpack

HCS157D/Sample +25oC Sample 16 Lead SBDIP

HCS157K/Sample +25oC Sample 16 Lead Ceramic Flatpack

HCS157HMSR +25oC Die Die

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

173

Spec Number

File Number 3561.1

DB NA

518833

Functional Block Diagram

1

S

15

E

13

4I1

14

4I0

10

3I1

11

3I0

6

2I1

5

2I0

3

1I1

2

1I0

HCS157MS

3 CIRCUITS IDENTICAL TO CIRCUIT

IN ABOVE DASHED OUTLINE

12

4Y

9

3Y

7

2Y

4

1Y

ENABLE

E S I0 I1 Y

HXXXL

LLLXL

LLHXH

LHXLL

LHXHH

H = High Level
L = Low Level
X = Immaterial

TRUTH TABLE

SELECT

INPUTS DATA INPUTS OUTPUT

174

Spec Number 518833

Specifications HCS157MS

Absolute Maximum Ratings Reliability Information

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.

Operating Conditions

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . . .100ns Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W

If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.7mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.8mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . VCC to 70% of VCC

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . .0V to 30% of VCC

JA

θ

JC

(NOTE 1)

PARAMETER SYMBOL

Supply Current ICC VCC = 5.5V,

Output Current
(Sink)

Output Current
(Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 3.15V,

Output Voltage High VOH VCC = 4.5V, VIH = 3.15V,

Input Leakage
Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V,
(Note 2)

VOUT = VCC - 0.4V,
VIL = 0V, (Note 2)

IOL = 50µA, VIL = 1.35V

VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V

IOH = -50µA, VIL = 1.35V

VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-40µA

2, 3 +125oC, -55oC - 750 µA

1 +25oC 7.2 - mA

2, 3 +125oC, -55oC 6.0 - mA

1 +25oC -7.2 - mA

2, 3 +125oC, -55oC -6.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Noise Immunity
Functional Test

NOTES:

1. All voltages referenced to device GND.

2. Force/Measure functions may be interchanged.

3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V, VIH = 3.15V,

VIL = 1.35V, (Note 3)

7, 8A, 8B +25oC, +125oC, -55oC---

175

Spec Number 518833