Intersil Corporation HCS151MS Datasheet

September 1995

HCS151MS

Radiation Hardened

8-Input Multiplexer

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

/mg

-9

Errors/

Bit-Day (Typ)

• Dose Rate Survivability: >1 x 10

• Dose Rate Upset >10

RAD (Si)/s 20ns Pulse

• Cosmic Ray Upset Immunity 2 x 10

RAD (Si)/s

-9

Error/Gate Day

(Typ)

• Latch-Up Free Under Any Conditions

• Military Temperature Range: -55oC to +125oC

• Signiﬁcant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

- VIL = 30% of VCC Max

- VIH = 70% of VCC Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCS151MS is a Radiation Hardened 8-Input Multiplexer having three binary control inputs (S0, S1, S2) and an active low enable ( select one of eight channels. Outputs are both inverting and non-inverting.

The HCS151MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCS151MS is supplied in a 16 lead Ceramic ﬂatpack (K sufﬁx) or a SBDIP Package (D sufﬁx).

E) input. The three binary signals

Pinouts

I3 I2 I1 I0

Y Y E

GND

16 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T16

TOP VIEW

VCC

I1 I0

5 6

GND

16 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDFP4-F16

TOP VIEW

116 2 3 4 5 6 7 8

15 14 13 12 11 10

VCC I4 I5 I6 I7 S0 S1 S2

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

HCS151DMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead SBDIP

HCS151KMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead Ceramic Flatpack

HCS151D/Sample +25oC Sample 16 Lead SBDIP

HCS151K/Sample +25oC Sample 16 Lead Ceramic Flatpack

HCS151HMSR +25oC Die Die

163

Spec Number 518753

File Number 3077.1

DB NA

Functional Diagram

HCS151MS

I0 I1 I2 I3 I4 I5 I6 I7

VCC

GND

TRUTH TABLE

INPUTS OUTPUTS

ES0S1S2I0I1I2I3I4I5I6I7YY

HXXXXXXXXXXXHL LLLLLXXXXXXXHL LLLLHXXXXXXXLH LLLHXLXXXXXXHL LLLHXHXXXXXXLH LLHLXXLXXXXXHL LLHLXXHXXXXXLH LLHHXXXLXXXXHL LLHHXXXHXXXXLH LHLLXXXXLXXXHL LHLLXXXXHXXXLH LHLHXXXXXLXXHL LHLHXXXXXHXXLH LHHLXXXXXXLXHL LHHLXXXXXXHXLH LHHHXXXXXXXLHL LHHHXXXXXXXHLH

H = High Level, L = Low Level, X = Don’t Care

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Spec Number 518753

Speciﬁcations HCS151MS

Absolute Maximum Ratings Reliability Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classiﬁcation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.

Operating Conditions

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . . .500ns Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W

If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.7mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.8mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . 70% of VCC to VCC

(NOTE 1)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current (Sink)

Output Current (Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 3.15V,

Output Voltage High VOH VCC = 4.5V, VIH = 3.15V,

Input Leakage Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC -0.4V, VIL = 0V

IOL = 50µA, VIL = 1.35V

VCC = 5.5V, VIH = 3.85V, IOL = 50µA, VIL = 1.65V

IOH = -50µA, VIL = 1.35V

VCC = 5.5V, VIH = 3.85V, IOH = -50µA, VIL = 1.65V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-40µA

2, 3 +125oC, -55oC - 750 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1 +25oC -4.8 - mA

2, 3 +125oC, -55oC -4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Noise Immunity Functional Test

NOTES:

1. All voltages reference to device GND.

2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V,

VIH = 0.70(VCC), VIL = 0.30(VCC) (Note 2)

7, 8A, 8B +25oC, +125oC, -55oC---

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Spec Number 518753

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