Intersil Corporation HCS14MS Datasheet

August 1995

HCS14MS

Radiation Hardened

HEX Inverting Schmitt Trigger

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD(Si)

2

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

/mg

-9

Errors/Bit-Day

(Typ)

12

• Dose Rate Survivability: >1 x 10

10

• Dose Rate Upset >10

RAD (Si)/s 20ns Pulse

Rads (Si)/s

• Latch-Up Free Under Any Conditions

o

• Military Temperature Range: -55

C to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

- VIL = 30% of VCC Max

- VIH = 70% of VCC Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCS14MS is a Radiation Hardened HEX Inverting
Schmitt trigger. A high on any input forces the output to a Low
state.

The HCS14MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.

Pinouts

Y1
A2
Y2
A3
Y3

GND

14 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T14

TOP VIEW

A1

1
2

Y1

3

A2

4

Y2

5

A3

6

Y3

7

GND

14 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDFP3-F14

TOP VIEW

1A1
2
3
4
5
6
7

14

VCC

13

A6

12

Y6

11

A5

10

Y5

9

A4

8

Y4

14
13

12
11
10

9
8

VCC
A6
Y6
A5
Y5
A4
Y4

The HCS14MS is supplied in a 14 lead Ceramic flatpack Package
(K suffix) or a 14 lead SBDIP Package (D suffix).

Ordering Information

PART

NUMBER

HCS14DMSR -55oC to +125oC Intersil Class

HCS14KMSR -55oC to +125oC Intersil Class

HCS14D/
Sample

HCS14K/
Sample

HCS14HMSR +25oC Die Die

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

TEMPERATURE

RANGE

+25oC Sample 14 Lead SBDIP

+25oC Sample 14 Lead Ceramic

SCREENING

LEVEL PACKAGE

14 Lead SBDIP

S Equivalent

14 Lead Ceramic

S Equivalent

Flatpack

Flatpack

Functional Diagram

1

TRUTH TABLE

INPUTS

An

LH

HL

NOTE: L = Logic Level Low,

H = Logic level High

OUTPUTS

Yn

YnAn

DB NA

Spec Number 518752

File Number 3049.1

Specifications HCS14MS

Absolute Maximum Ratings Reliability Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..

Operating Conditions

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . Unlimited Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.66W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W

If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.5mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.6mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . .0.0V to 30% of VCC Max.

Input High Voltage (VIH). . . . . . . . . . . . . . 70% of VCC to VCC Min.

JA

θ

JC

GROUP

(NOTE 1)

PARAMETERS SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current
(Sink)

Output Current
(Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 3.15V,

Output Voltage High VOH VCC = 4.5V, VIH = 3.15V,

Input Leakage
Current

Input Switch Point Vt+ VCC = 4.5V 1 +25oC 2.00 3.15 V

Noise Immunity
Functional Test

NOTES:

1. All voltages reference to device GND.

2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

Vt- VCC = 4.5V 1 +25oC 1.35 2.60 V

VH VCC = 4.5V 1 +25oC 0.40 1.40 V

FN VCC = 4.5V,

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC -0.4V,
VIL = 0V

IOL = 50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,

IOL = 50µA, VIL = 1.65V

IOH = -50µA, VIL = 1.35V
VCC = 5.5V, VIH = 3.85V,

IOH = -50µA, VIL = 1.65V

GND

VIH = 0.70(VCC), (Note 2)
VIL = 0.30(VCC)

A SUB-

GROUPS TEMPERATURE

1 +25oC-10µA

2, 3 +125oC, -55oC - 200 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1 +25oC -4.8 - mA

2, 3 +125oC, -55oC -4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

2, 3 +125oC, -55oC 2.00 3.15 V

2, 3 +125oC, -55oC 1.35 2.60 V

2, 3 +125oC, -55oC 0.40 1.40 V

7, 8A, 8B +25oC, +125oC, -55oC---

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Spec Number 518752

2

Specifications HCS14MS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP

(NOTES 1, 2)

PARAMETER SYMBOL

Input to Output TPHL VCC = 4.5V 9 +25oC 2 18 ns

Input to Output TPLH VCC = 4.5V 9 +25oC 2 22 ns

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Capacitance Power
Dissipation

Input Capacitance CIN VCC = 5.0V, VIH = 5.0V,

Output Transition
Time

NOTE:

1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.

CPD VCC = 5.0V, VIH = 5.0V,

TTHL
TTLH

CONDITIONS

VIL = 0V, f = 1MHz

VIL = 0V, f = 1MHz

VCC = 4.5V 1 +25oC - 15 ns

A SUB-

GROUPS TEMPERATURE

10, 11 +125oC, -55oC 2 20 ns

10, 11 +125oC, -55oC 2 25 ns

1 +25oC - 33 pF
1 +125oC, -55oC - 40 pF
1 +25oC - 10 pF
1 +125oC - 10 pF

1 +125oC - 22 ns

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

(NOTES 1, 2)

PARAMETERS SYMBOL

Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.2 mA
Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND,

VOUT = 0.4V

Output Current (Source) IOH VCC = 4.5V, VIN = VCC or GND,

VOUT = VCC -0.4V

Output Voltage Low VOL VCC = 4.5V and 5.5V,

VIH = 0.70(VCC),
VIL = 0.20(VCC), IOL = 50µA

Output Voltage High VOH VCC = 4.5V and 5.5V,

VIH = 0.70(VCC),

VIL = 0.20(VCC), IOH = -50µA
Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC-±5 µA
Noise Immunity Functional Test FN VCC = 4.5V, VIH = 0.70(VCC),

VIL = 0.20(VCC), (Note 3)
Input to Output TPHL VCC = 4.5V +25oC 2 21 ns

TPLH VCC = 4.5V +25oC 2 26 ns

CONDITIONS TEMPERATURE

+25oC 4.0 - mA

+25oC -4.0 - mA

+25oC - 0.1 V

+25oC VCC

+25oC ---

200K RAD LIMITS

UNITSMIN MAX

-V

-0.1

Spec Number 518752

3