Intersil Corporation HCS125MS Datasheet

September 1995

HCS125MS

Radiation Hardened

Quad Buffer, Three-State

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

2

/mg

-9

Errors/Bit-Day

(Typ)

• Dose Rate Survivability: >1 x 10

• Dose Rate Upset >10

10

RAD (Si)/s, 20ns Pulse

12

RAD (Si)/s

• Latch-Up Free Under Any Conditions

• Military Temperature Range: -55

o

C to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

- VIL = 30% of VCC Max

- VIH = 70% of VCC Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCS125MS is a Radiation Hardened quad three-state
buffer, each having its own output enable input. A high level on the
enable input puts the output in a high impedance state.

The HCS125MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCS125MS is supplied in a 14 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).

Pinouts

14 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T14, LEAD FINISH C

TOP VIEW

OE1

1

A1

2
3

Y1

OE2

4
5

A2

6

Y2

7

GND

14 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDFP3-F14, LEAD FINISH C

TOP VIEW

OE1

A1
Y1

OE2

A2
Y2

GND

1
2
3
4
5
6
7

14

VCC
OE4

13
12

A4

11

Y4
OE3

10

A3

9

Y3

8

14
13

12
11
10

9
8

VCC
OE4
A4
Y4
OE3
A3
Y3

Ordering Information

PART

NUMBER

HCS125DMSR -55oC to +125oC Intersil Class

HCS125KMSR -55oC to +125oC Intersil Class

HCS125D/
Sample

HCS125K/
Sample

HCS125HMSR +25oC Die Die

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

TEMPERATURE

RANGE

+25oC Sample 14 Lead SBDIP

+25oC Sample 14 Lead Ceramic

SCREENING

LEVEL PACKAGE

14 Lead SBDIP

S Equivalent

14 Lead Ceramic

S Equivalent

Flatpack

Flatpack

123

Functional Diagram

An

OEn

L = Low, H = High, X = Don’t Care, Z = High Impedance

Yn

P

n

TRUTH TABLE

INPUTS OUTPUT

An OEn Yn

HLH

LLL

XHZ

Spec Number

518831

File Number 3559.1

Specifications HCS125MS

Absolute Maximum Ratings Reliability Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±35mA

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

(All Voltage Reference to the VSS Terminal)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Operating Conditions

Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Time at 4.5V VCC (tr, tf) . . . . . . . 100ns/V Max.

Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W

If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.5mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.6mW/oC

Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 Gates

Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . VCC to 70% of VCC

Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC

JA

θ

JC

(NOTE 1)

PARAMETER SYMBOL

Supply Current ICC VCC = 5.5V,

Output Current
(Source)

Output Current
(Sink)

Output Voltage High VOH VCC = 5.5V, VIH = 3.85V,

Output Voltage Low VOL VCC = 5.5V, VIH = 3.85V,

Input Leakage
Current

IOH VCC = 4.5V, VIH = 4.5V,

IOL VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V,

CONDITIONS

VIN = VCC or GND

VOUT = VCC -0.4V,
VIL = 0V, (Note 2)

VOUT = 0.4V, VIL = 0V,
(Note 2)

VIL = 1.65V, IOH = -50µA

VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50µA

VIL = 1.65V, IOL = 50µA

VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50µA

VIN = VCC or GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-40µA

2, 3 +125oC, -55oC - 750 µA

1 +25oC -7.2 - mA

2, 3 +125oC, -55oC -6.0 - mA

1 +25oC 7.2 - mA

2, 3 +125oC, -55oC 6.0 - mA

1, 2, 3 +25oC, +125oC, -55oC VCC

1, 2, 3 +25oC, +125oC, -55oC VCC

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Three-State Output
Leakage Current

Noise Immunity
Functional Test

NOTES:

1. All voltages reference to device GND.

2. Force/Measure functions may be interchanged.

3. For functional tests, VO ≥4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

IOZ VCC = 5.5V, Force Voltage

= 0V or VCC

FN VCC = 4.5V, VIH = 3.15V,

VIL = 1.35V, (Note 3)

1 +25oC-±1.0 µA

2, 3 +125oC, -55oC-±50 µA

7, 8A, 8B +25oC, +125oC, -55oC- - V

124

Spec Number 518831

Specifications HCS125MS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP

(NOTES 1, 2)

PARAMETER SYMBOL

Propagation Delay
Input to Y

Enable Delay
OE toY

Disable Delay
OE toY

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns.

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Capacitance Power
Dissipation

TPHL
TPLH

TPZL

TPZH

TPLZ
TPHZ

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

CPD VCC = 5.0V, VIH = 5.0V,

CONDITIONS

VCC = 4.5V, VIH = 4.5V,
VIL = 0V

VCC = 4.5V, VIH = 4.5V,
VIL = 0V

VCC = 4.5V, VIH = 4.5V,
VIL = 0V

VIL = 0V, f = 1MHz

A SUB-

GROUPS TEMPERATURE

9 +25oC 2 21 ns

10, 11 +125oC, -55oC 2 25 ns

9 +25oC 2 25 ns

10, 11 +125oC, -55oC 2 30 ns

9 +25oC 2 25 ns

10, 11 +125oC, -55oC 2 30 ns

1 +25oC - 60 pF

1 +125oC, -55oC - 90 pF

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

Input Capacitance CIN VCC = 5.0V, VIH = 5.0V,

VIL = 0V, f = 1MHz

Output Capacitance COUT VCC = 5.0V, VIH = 5.0V,

VIL = 0V, f = 1MHz

Output Transition
Time

NOTE:

1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.

PARAMETER SYMBOL

Supply Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.75 mA

Output Current
(Source)

TTHL
TTLH

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

VCC = 4.5V, VIH = 4.5V,
VIL = 0V

(NOTE 1)

CONDITIONS TEMPERATURE

IOH VCC = VIH = 4.5V,

VOUT = VCC -0.4V, VIL = 0

1 +25oC - 10 pF

1 +125oC, -55oC - 10 pF

1 +25oC 1 20 pF

1 +125oC, -55oC 1 20 pF

1 +25oC 1 15 ns

1 +125oC, -55oC 1 22 ns

200K RAD

LIMITS

UNITSMIN MAX

+25oC -6.0 - mA

Output Current (Sink) IOL VCC = VIH = 4.5V,

VOUT = 0.4V, VIL = 0

+25oC 6.0 - mA

Spec Number 518831

125