Intersil Corporation HCS10MS Datasheet

September 1995

HCS10MS

Radiation Hardened

Triple 3-Input NAND Gate

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

/mg

-9

Errors/Bit-Day

(Typ)

• Dose Rate Survivability: >1 x 10

• Dose Rate Upset >10

RAD (SI)/s 20ns Pulse

• Cosmic Ray Upset Immunity < 2 x 10

RAD (Si)/s

-9

Errors/Gate Day (Typ)

• Latch-Up Free Under Any Conditions

• Military Temperature Range: -55

C to +125oC

• Signiﬁcant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

- VIL = 30% of VCC Max

- VIH = 70% of VCC Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCS10MS is a Radiation Hardened Triple 3-Input NAND Gate. A high on all inputs forces the output to a Low state.

Pinouts

14 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-183S CDIP2-T14, LEAD FINISH C

TOP VIEW

1 2

GND

14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-183S CDFP3-F14, LEAD FINISH C

TOP VIEW

1A1 B1 A2 B2 C2 Y2

GND

VCC

14 13

12 11 10

9 8

VCC C1 Y1 C3 B3 A3 Y3

The HCS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCS10MS is supplied in a 14 lead Ceramic ﬂatpack (K sufﬁx) or a SBDIP Package (D sufﬁx).

Ordering Information

PART

NUMBER

HCS05DMSR -55oC to +125oC Intersil Class

HCS05KMSR -55oC to +125oC Intersil Class

HCS05D/ Sample

HCS05K/ Sample

HCS05HMSR +25oC Die Die

TEMPERATURE

RANGE

+25oC Sample 14 Lead SBDIP

+25oC Sample 14 Lead Ceramic

SCREENING

LEVEL PACKAGE

14 Lead SBDIP

S Equivalent

14 Lead Ceramic

S Equivalent

Flatpack

Functional Diagram

(1, 3, 9)

Bn Yn

(2, 4, 10)

(5, 11, 13)

An Bn Cn Yn

LLL H LLH H LHL H

LHH H HLL H HLH H HHL H HHH L

NOTE: L = Logic Level Low, H = Logic level High

(12, 6, 8)

TRUTH TABLE

INPUTS OUTPUTS

Spec Number

518747

File Number 2435.2

Speciﬁcations HCS10MS

Absolute Maximum Ratings Reliability Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classiﬁcation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semi conductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..

Operating Conditions

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . 100ns/V Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W

If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.5mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.6mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . 70% of VCC to VCC

(NOTE 1)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current (Sink)

Output Current (Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 3.15V,

Output Voltage High VOH VCC = 4.5V, VIH = 3.15V,

Input Leakage Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC -0.4V, VIL = 0V

IOL = 50µA, VIL = 1.35V

VCC = 5.5V, VIH = 3.85V, IOL = 50µA, VIL = 1.65V

IOH = -50µA, VIL = 1.35V

VCC = 5.5V, VIH = 3.85V, IOH = -50µA, VIL = 1.65V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-10µA

2, 3 +125oC, -55oC - 200 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1 +25oC -4.8 - mA

2, 3 +125oC, -55oC -4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Noise Immunity Functional Test

NOTES:

1. All voltages reference to device GND.

2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V,

VIH = 0.70(VCC), VIL = 0.30(VCC) (Note 2)

7, 8A, 8B +25oC, +125oC, -55oC---

Spec Number 518747

Speciﬁcations HCS10MS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP

(NOTES 1, 2)

PARAMETER SYMBOL

Input to Yn TPHL VCC = 4.5V 9 +25oC 2 18 ns

Input to Yn TPLH VCC = 4.5V 9 +25oC 2 20 ns

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Capacitance Power Dissipation

Input Capacitance CIN VCC = 5.0V, f = 1MHz 1 +25oC - 10 pF

Output Transition Time

NOTE:

1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.

CPD VCC = 5.0V, f = 1MHz 1 +25oC - 39 pF

TTHL TTLH

CONDITIONS

VCC = 4.5V 1 +25oC - 15 ns

A SUB-

GROUPS TEMPERATURE

10, 11 +125oC, -55oC 2 20 ns

10, 11 +125oC, -55oC 2 22 ns

1 +125oC, -55oC - 47 pF

1 +125oC, -55oC - 10 pF

1 +125oC, -55oC - 22 ns

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

(NOTES 1, 2)

PARAMETER SYMBOL

Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.2 mA Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND,

VOUT = 0.4V

Output Current (Source) IOH VCC = 4.5V, VIN = VCC or GND,

VOUT = VCC -0.4V

Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = 0.70(VCC),

VIL = 0.30(VCC), IOL = 50µA

Output Voltage High VOH VCC = 4.5V and 5.5V, VIH = 0.70(VCC),

VIL = 0.30(VCC), IOH = -50µA Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC-±5 µA Noise Immunity

Functional Test Input to Yn TPHL VCC = 4.5V +25oC 2 20 ns

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.

3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V, VIH = 0.70(VCC),

VIL = 0.30(VCC), (Note 3)

TPLH VCC = 4.5V +25oC 2 22 ns

CONDITIONS TEMPERATURE

+25oC 4.0 - mA

+25oC -4.0 - mA

+25oC - 0.1 V

+25oC VCC

+25oC ---

200K RAD LIMITS

UNITSMIN MAX

-V

-0.1

Spec Number 518747

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