Intersil Corporation HCS08MS Datasheet

August 1995

HCS08MS

Radiation Hardened

Quad 2-Input AND Gate

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD(Si)

2

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

/mg

-9

Errors/Bit-Day

(Typ)

• Dose Rate Survivability: >1 x 10

10

• Dose Rate Upset >10

RAD(Si)/s 20ns Pulse

12

Rads (Si)/s

• Latch-Up Free Under Any Conditions

o

• Military Temperature Range: -55

C to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

- VIL = 30% of VCC Max

- VIH = 70% of VCC Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCS08MS is a Radiation Hardened Quad 2-Input AND
Gate. A high on both inputs force the output to a High state.

The HCS08MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCS08MS is supplied in a 14 lead Ceramic Flatpack Package
(K suffix) or a 14 lead SBDIP Package (D suffix).

Ordering Information

PART

NUMBER

HCS08DMSR -55oC to +125oC Intersil Class

HCS08KMSR -55oC to +125oC Intersil Class

HCS08D/
Sample

HCS08K/
Sample

HCS08HMSR +25oC Die Die

TEMPERATURE

RANGE

+25oC Sample 14 Lead SBDIP

+25oC Sample 14 Lead Ceramic

SCREENING

LEVEL PACKAGE

14 Lead SBDIP

S Equivalent

14 Lead Ceramic

S Equivalent

Flatpack

Flatpack

Pinouts

14 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T14

TOP VIEW

A1

1
2

B1

3

Y1

4

A2

5

B2

6

Y2

7

GND

14 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDFP3-F14

TOP VIEW

1A1
B1
Y1
A2
B2
Y2

GND

An Bn Yn

LLL

LHL
HLL
HHH

NOTE: L = Logic Level Low, H = Logic level High

2
3
4
5
6
7

TRUTH TABLE

INPUTS OUTPUTS

14

VCC

13

B4

12

A4

11

Y4

10

B3

9

A3

8

Y3

14
13

12
11
10

9
8

Functional Diagram

(1, 4, 9, 12)

An

(2, 5, 10, 13)

Bn

VCC
B4
A4
Y4
B3
A3
Y3

(3, 6, 8, 11)

Yn

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

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DB NA

Spec Number 518746

File Number 3047.1

Specifications HCS08MS

Absolute Maximum Ratings Reliability Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..

Operating Conditions

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . 100ns/V Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W

Maximum Package Power Dissipation at +125oC

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.66W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W

If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.5mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.6mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . 70% of VCC to VCC

JA

θ

JC

(NOTE 1)

PARAMETERS SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current
(Sink)

Output Current
(Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 3.15V,

Output Voltage High VOH VCC = 4.5V, VIH = 3.15V,

Input Leakage
Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC -0.4V,
VIL = 0V

IOL = 50µA, VIL = 1.35V

VCC = 5.5V, VIH = 3.85V,
IOL = 50µA, VIL = 1.65V

IOH = -50µA, VIL = 1.35V

VCC = 5.5V, VIH = 3.85V,
IOH = -50µA, VIL = 1.65V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-10µA

2, 3 +125oC, -55oC - 200 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1 +25oC -4.8 - mA

2, 3 +125oC, -55oC -4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Noise Immunity
Functional Test

NOTES:

1. All voltages reference to device GND.

2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V,

VIH = 0.70(VCC),
VIL = 0.30(VCC) (Note 2)

7, 8A, 8B +25oC, +125oC, -55oC---

2

Spec Number 518746

Specifications HCS08MS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP

(NOTES 1, 2)

PARAMETER SYMBOL

Input to Yn TPHL VCC = 4.5V 9 +25oC 2 18 ns

Input to Yn TPLH VCC = 4.5V 9 +25oC 2 18 ns

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Capacitance Power
Dissipation

Input Capacitance CIN VCC = 5.0V, f = 1MHz 1 +25oC - 10 pF

CPD VCC = 5.0V, f = 1MHz 1 +25oC - 18 pF

CONDITIONS

A SUB-

GROUPS TEMPERATURE

10, 11 +125oC, -55oC 2 20 ns

10, 11 +125oC, -55oC 2 20 ns

1 +125oC, -55oC - 25 pF

LIMITS

LIMITS

UNITSMIN MAX

UNITSMIN MAX

1 +125oC - 10 pF

Output Transition
Time

NOTE:

1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.

PARAMETERS SYMBOL

Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.2 mA

Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND,

Output Current (Source) IOH VCC = 4.5V, VIN = VCC or GND,

Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = 0.70(VCC),

TTHL
TTLH

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

VCC = 4.5V 1 +25oC - 15 ns

1 +125oC - 22 ns

200K RAD LIMITS

(NOTES 1, 2)

CONDITIONS TEMPERATURE

+25oC 4.0 - mA

VOUT = 0.4V

+25oC -4.0 - mA

VOUT = VCC -0.4V

+25oC - 0.1 V
VIL = 0.30(VCC) at 200K RAD,
IOL = 50µA

UNITSMIN MAX

Output Voltage High VOH VCC = 4.5V and 5.5V, VIH = 0.70(VCC),

VIL = 0.30(VCC) at 200K RAD,
IOH = -50µA

Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC-±5 µA

+25oC VCC

-0.1

-V

Spec Number 518746

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