Intersil Corporation HCS05MS Datasheet

September 1995

HCS05MS

Radiation Hardened

Hex Inverter with Open Drain

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD (Si)

2

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

/mg

-9

Errors/Bit-Day

(Typ)

• Dose Rate Survivability: >1 x 10

10

• Dose Rate Upset >10

RAD (Si)/s 20ns Pulse

12

RAD (Si)/s

• Latch-Up Free Under Any Conditions

o

• Military Temperature Range: -55

C to +125oC

• Significant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

- VIL = 30% of VCC Max

- VIH = 70% of VCC Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCS05MS is a Radiation Hardened Hex inverter
function with open drain outputs. These open drain outputs can
drive into resistive loads with a separate voltage supply.

The HCS05MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.

Pinouts

14 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T14, LEAD FINISH C

TOP VIEW

A1

1

Y1

2
3

A2
Y2

4
5

A3
Y3

6

GND

7

14 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDFP3-F14, LEAD FINISH C

TOP VIEW

1A1
Y1
A2
Y2
A3
Y3

GND

2

3

4

5

6

7

VCC

14

A6

13

Y6

12

A5

11

Y5

10

A4

9

Y4

8

14
13

12
11
10

9
8

VCC
A6
Y6
A5
Y5
A4
Y4

The HCS05MS is supplied in a 14 lead Ceramic Flatpack (K suffix)
or a Ceramic Dual-In-Line Package (D suffix).

Ordering Information

PART

NUMBER

HCS05DMSR -55oC to +125oC Intersil Class

HCS05KMSR -55oC to +125oC Intersil Class

HCS05D/
Sample

HCS05K/
Sample

HCS05HMSR +25oC Die Die

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

TEMPERATURE

RANGE

+25oC Sample 14 Lead SBDIP

+25oC Sample 14 Lead Ceramic

SCREENING

LEVEL PACKAGE

14 Lead SBDIP

S Equivalent

14 Lead Ceramic

S Equivalent

Flatpack

Flatpack

35

Functional Diagram

An

INPUTS OUTPUTS

NOTES:

1. No pullup resistor

2. With pullup resistor

3. L = Low

4. H = High

Yn

TRUTH TABLE

An Yn

L Z (Note 1) H (Note 2)

HL

Spec Number

518829

File Number 3557.1

Specifications HCS05MS

Absolute Maximum Ratings Reliability Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..

Operating Conditions

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . 100ns/V Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W

Maximum Package Power Dissipation at +125oC Ambient

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.68W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W

If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.5mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.6mW/oC

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . . . 70% of VCC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC

JA

θ

JC

GROUP

(NOTE 1)

PARAMETER SYMBOL

Supply Current ICC VCC = 5.5V,

Output Current
(Sink)

Output Voltage Low VOL VCC = 5.5V, VIH = 3.85V,

Input Leakage
Current

Three-State Output
Leakage Current

Noise Immunity
Functional Test

NOTES:

1. All voltages reference to device GND.

2. Force/Measure functions may be interchanged.

3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

IOL VCC = VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

IOZH VCC = 5.5V,

FN VCC = 4.5V, VIH = 3.15,

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V
(Note 2)

VIL = 1.35V, IOL = 50µA
VCC = 4.5V, VIH = 3.15V,

VIL = 1.35V, IOL = 50µA,

GND

Force Voltage = VCC

VIL = 1.35 (Note 3)

A SUB-

GROUPS TEMPERATURE

1 +25oC-10µA

2, 3 +125oC, -55oC - 200 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

1 +25oC-1µA

2, 3 +125oC, -55oC-50µA

7, 8A, 8B +25oC, +125oC, -55oC- - V

LIMITS

UNITSMIN MAX

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

(NOTES 1, 2)

PARAMETER SYMBOL

Propagation Delay
An to Yn

NOTES:

1. All voltages referenced to device GND.

2. Measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns.

TPLZ
TPZL

CONDITIONS

VCC = 4.5V, VIH = 4.5V,
VIL = 0V

36

GROUP

A SUB-

GROUPS TEMPERATURE

9 +25oC 2 18 ns

10, 11 +125oC, -55oC 2 20 ns

LIMITS

Spec Number 518829

UNITSMIN MAX

Specifications HCS05MS

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

LIMITS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Capacitance Power
Dissipation

Input Capacitance CIN VCC = 5.0V, VIH = 5.0V,

Output Transition
Time

NOTE:

1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.

PARAMETER SYMBOL

CPD VCC = 5.0V, VIH = 5.0V,

VIL = 0.0V, f = 1MHz

VIL = 0.0V, f = 1MHz

TTHL VCC = 4.5V, VIH = 4.5V,

VIL = 0.0V

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

(NOTE 1)

CONDITIONS TEMPERATURE

1 +25oC - 15 pF
1 +125oC, -55oC - 23 pF
1 +25oC - 10 pF
1 +125oC, -55oC - 10 pF
1 +25oC 1 15 ns
1 +125oC, -55oC 1 22 ns

200K RAD

LIMITS

UNITSMIN MAX

UNITSMIN MAX

Supply Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.2 mA

Output Current (Sink) IOL VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0V +25oC 4.0 - mA

Output Voltage Low VOL VCC = 5.5V , VIH = 3.85V, VIL = 1.65V,

IOL = 50µA

VCC = 4.5V , VIH = 3.15V, VIL = 1.35V,
IOL = 50µA

Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC-±5 µA

Three-State Output
Leakage Current

Noise Immunity
Functional Test

Propagation Delay TPLZ

NOTES:

1. All voltages referenced to device GND.

2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

PARAMETER SYMBOL GROUP B SUBGROUP UNITS

IOZH VCC = 5.5V, Force Voltage = 0V or VCC +25oC-±50 µA

FN VCC = 4.5V, VIH =3.15V, VIL = 1.35V,

(Note 2)

VCC = 4.5V, VIH =4.5V, VIL = 0V +25oC 2 20 ns

TPZL

TABLE 5. DELTA PARAMETERS (+25oC)

+25oC - 0.1 V

+25oC - 0.1 V

+25oC--V

Supply Current ICC +3 µA

Three-State Leaking Current IOZH ±200 nA

Output Current IOL -15 %

37

Spec Number 518829