Intersil Corporation HCS02MS Datasheet

August 1995

HCS02MS

Radiation Hardened

Quad 2-Input NOR Gate

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD(Si)

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

/mg

-9

Errors/Bit-Day

(Typ)

• Dose Rate Survivability: >1 x 10

• Dose Rate Upset >10

RAD(Si)/s 20ns Pulse

Rads (Si)/s

• Latch-Up Free Under Any Conditions

• Military Temperature Range: -55

C to +125oC

• Signiﬁcant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

- VIL = 30% of VCC Max

- VIH = 70% of VCC Min

• Input Current Levels Ii ≤ 5µA at VOL, VOH

Description

The Intersil HCS02MS is a Radiation Hardened Quad 2-Input NOR Gate. A low on both inputs forces the output to a High state.

The HCS02MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.

Pinouts

A1 B1 Y2 A2 B2

GND

14 LEAD CERAMIC DUAL-IN-LINE

METAL SEAL PACKAGE (SBDIP)

MIL-STD-1835 CDIP2-T14

TOP VIEW

1 2

GND

14 LEAD CERAMIC METAL SEAL

FLATPACK PACKAGE (FLATPACK)

MIL-STD-1835 CDFP3-F14

TOP VIEW

1Y1 2 3 4 5 6 7

VCC

14 13

12 11 10

9 8

VCC Y4 B4 A4 Y3 B3 A3

The HCS02MS is supplied in a 14 lead Ceramic Flatpack Package (K sufﬁx) or a 14 lead SBDIP Package (D sufﬁx).

Ordering Information

PART

NUMBER

HCS02DMSR -55oC to +125oC Intersil Class

HCS02KMSR -55oC to +125oC Intersil Class

TEMPERATURE

RANGE

SCREENING

LEVEL PACKAGE

14 Lead SBDIP

S Equivalent

14 Lead Ceramic

S Equivalent

Flatpack

NOTE: L = Logic Level Low, H = Logic level High

Functional Diagram

HCS02D/ Sample

HCS02K/ Sample

HCS02HMSR +25oC Die Die

+25oC Sample 14 Lead SBDIP

(2, 5, 8, 11)

+25oC Sample 14 Lead Ceramic

Flatpack

(3, 6, 9, 12)

TRUTH TABLE

INPUTS OUTPUTS

An Bn Yn

LLH

LHL HLL HHL

Yn (1, 4, 10, 13)

DB NA

Spec Number 518744

File Number 2433.2

Speciﬁcations HCS02MS

Absolute Maximum Ratings Reliability Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +7.0V

Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA

(All Voltage Reference to the VSS Terminal)

Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC

ESD Classiﬁcation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..

Operating Conditions

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . 100ns/V Max

Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Resistance θ

SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W

Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W

Maximum Package Power Dissipation at +125oC

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.66W

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W

If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate:

SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13.5mW/oC

Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . .8.6mW/oC

Input Low Voltage (VIL). . . . . . . . . . . . . . .0.0V to 30% of VCC Max.

Input High Voltage (VIH). . . . . . . . . . . . . . 70% of VCC to VCC Min.

(NOTE 1)

PARAMETERS SYMBOL

Quiescent Current ICC VCC = 5.5V,

Output Current (Sink)

Output Current (Source)

Output Voltage Low VOL VCC = 4.5V, VIH = 3.15V,

Output Voltage High VOH VCC = 4.5V, VIH = 3.15V,

Input Leakage Current

IOL VCC = 4.5V, VIH = 4.5V,

IOH VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V, VIN = VCC or

CONDITIONS

VIN = VCC or GND

VOUT = 0.4V, VIL = 0V

VOUT = VCC -0.4V, VIL = 0V

IOL = 50µA, VIL = 1.35V

VCC = 5.5V, VIH = 3.85V, IOL = 50µA, VIL = 1.65V

IOH = -50µA, VIL = 1.35V

VCC = 5.5V, VIH = 3.85V, IOH = -50µA, VIL = 1.65V

GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-10µA

2, 3 +125oC, -55oC - 200 µA

1 +25oC 4.8 - mA

2, 3 +125oC, -55oC 4.0 - mA

1 +25oC -4.8 - mA

2, 3 +125oC, -55oC -4.0 - mA

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC VCC

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±5.0 µA

LIMITS

-V

-0.1

-V

-0.1

UNITSMIN MAX

Noise Immunity Functional Test

NOTES:

1. All voltages reference to device GND.

2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

FN VCC = 4.5V,

VIH = 0.70(VCC), VIL = 0.30(VCC) (Note 2)

7, 8A, 8B +25oC, +125oC, -55oC---

Spec Number 518744

Speciﬁcations HCS02MS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP

(NOTES 1, 2)

PARAMETER SYMBOL

Input to Yn TPHL VCC = 4.5V 9 +25oC 2 18 ns

Input to Yn TPLH VCC = 4.5V 9 +25oC 2 20 ns

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE

Capacitance Power Dissipation

Input Capacitance CIN VCC = 5.0V, f = 1MHz 1 +25oC - 10 pF

Output Transition Time

NOTE:

1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.

CPD VCC = 5.0V, f = 1MHz 1 +25oC - 18 pF

TTHL TTLH

CONDITIONS

VCC = 4.5V 1 +25oC - 15 ns

A SUB-

GROUPS TEMPERATURE

10, 11 +125oC, -55oC 2 20 ns

10, 11 +125oC, -55oC 2 22 ns

1 +125oC, -55oC - 26 pF

1 +125oC - 10 pF

1 +125oC - 22 ns

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN MAX

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

(NOTES 1, 2)

PARAMETERS SYMBOL

Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.2 mA Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V +25oC 4.0 - mA Output Current

(Source) Output Voltage Low VOL VCC = 4.5V or 5.5V, VIH = 0.70(VCC),

Output Voltage High VOH VCC = 4.5V or 5.5V, VIH = 0.70(VCC),

Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC-±5 µA Noise Immunity

Functional Test Input to Yn TPHL VCC = 4.5V +25oC 2 20 ns

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.

3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”.

IOH VCC = 4.5V, VIN = VCC or GND,

VOUT = VCC -0.4V

VIL = 0.30(VCC) at 200K RAD, IOL = 50µA

VIL = 0.30(VCC) at 200K RAD, IOH = -50µA

FN VCC = 4.5V, VIH = 0.70(VCC),

VIL = 0.30(VCC) at 200K RAD, (Note 3)

TPLH VCC = 4.5V +25oC 2 22 ns

CONDITIONS TEMPERATURE

+25oC -4.0 - mA

+25oC - 0.1 V

+25oC VCC

+25oC ---

200K RAD LIMITS

UNITSMIN MAX

-V

-0.1

Spec Number 518744

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