Intersil Corporation HAF70009 Datasheet

HAF70009

Data Sheet August 1999

56A, 100V, 0.025 Ohm, N-Channel
UltraFET Power MOSFET

This N-Channel power MOSFET is
manufactured using the innovative
UltraFET™process. This advanced

process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low­voltage bus switches, and power management in portable
and battery-operated products.

Formerly developmental type TA75639.

Ordering Information

PART NUMBER PACKAGE TEMP. RANGE (oC)

HAF70009 TO-220AB -55 to 175

File Number

Features

• 56A, 100V

• Simulation Models

- Temperature Compensated PSPICE

® and SABER

Electrical Models

- Spice and Saber Thermal Impedance Models

- www.intersil.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

4770

©

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

Absolute Maximum Ratings T

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 150oC.

= 25oC, Unless Otherwise Specified

C

DSS

DGR

GS

DM

AS

STG

pkg

HAF70009 UNITS

100 V
100 V
±20 V

D

D

L

56

Figure 4

Figures 6, 14, 15

200

1.35

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

4-1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.comor 407-727-9207 | Copyright© Intersil Corporation 1999. SABERis a Copyright of Analogy,Inc.

UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

HAF70009

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Reverse Transfer Capacitance Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

DSS

VDS = 90V, VGS = 0V - - 1 µA
VDS = 80V, VGS = 0V, TC = 150oC - - 250 µA

GSS

GS(TH)VGS

DS(ON)ID

θJC
θJA

ON

VGS = ±20V - - ±100 nA

(Figure 3) - - 0.74
TO-220 - - 62

VDD = 50V, ID≅ 56A,
RL = 0.89Ω, VGS= 10V,

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(10)

g(TH)

ISS

RGS = 5.1Ω
(Figures 18,19)

r

f

VGS = 0V to 10V - 57 75 nC
VGS = 0V to 2V - 3.7 4.5 nC

gs

gd

VDS = 25V, VGS = 0V,
f = 1MHz

OSS

RSS

(Figure 12)

= 250µA, VGS = 0V (Figure 11) 100 - - V

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 56A, VGS = 10V (Figure 9) - 0.021 0.025 Ω

o

C/W

o

C/W

- - 110 ns

-15- ns

-60- ns

-20- ns

-25- ns

- - 70 ns

= 0V to 20V VDD = 50V,

- 110 130 nC
ID≅ 56A,
RL = 0.89Ω
I

= 1.0mA

g(REF)

(Figures 13, 16, 17)

- 9.8 - nC

-24-nC

- 2000 - pF

- 500 - pF

-65-pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

4-2

SD

rr

RR

ISD = 56A - - 1.25 V
ISD = 56A, dISD/dt = 100A/µs - - 110 ns
ISD = 56A, dISD/dt = 100A/µs - - 320 nC

Typical Performance Curves

HAF70009

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125 175

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

60

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

25 50 75 100 125 150 175

T

, CASE TEMPERATURE (oC)

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

1000

100

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

10

-5

10

SINGLE PULSE

-4

10

-3

10

-2

10

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

TC = 25oC

VGS = 10V

-4

10

-3

10

t, PULSE WIDTH (s)

-2

10

10

NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z

-1

10

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

-1

I = I

P

DM

θJC

0

10

o

C DERATE PEAK

25

0

10

2

x R

175 - T

150

θJC

t

1

t

2

+ T

C

1

10

C

1

10

4-3

FIGURE 4. PEAK CURRENT CAPABILITY