HA-2600/2605 are internally compensated bipolar
operational amplifiersthat feature very high input impedance
(500MΩ, HA-2600)coupled with wideband AC performance.
The high resistance of the input stage is complemented by
low offset voltage (0.5mV, HA-2600) and low bias and offset
current (1nA, HA-2600) to facilitate accurate signal
processing. Input offset can be reduced further by means of
an external nulling potentiometer. 12MHz unity gainbandwidth, 7V/µs slew rate and 150kV/V open-loop gain
enables HA-2600/2605 to perform high-gain amplification of
fast, wideband signals. These dynamic characteristics,
coupled with fastsettling times,makethese amplifiersideally
suited to pulse amplification designs as well as high
frequency (e.g.video) applications. Thefrequency response
of the amplifier can be tailored to exact design requirements
by means of an external bandwidth control capacitor.
In addition to its application in pulse and video amplifier
designs, HA-2600/2605 are particularly suited to other high
performance designs such as high-gain low distortion audio
amplifiers, high-Q and wideband active filters and highspeed comparators. For more information, please refer to
Application Note AN515.
The HA-2600 is offered as /883 Military Grade; product and
data sheet are available upon request.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Maximum Junction Temperature (Hermetic Package) . . . . . . . .175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC
Maximum Storage Temperature Range. . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
Electrical SpecificationsV
PARAMETER
INPUT CHARACTERISTICS
Offset Voltage25-0.54-35mV
Average Offset Voltage DriftFull-5--5-µV/oC
Bias Current25-110-525nA
Offset Current25-110-525nA
Differential Input Resistance (Note 12)25100500-40300-MΩ
Input Noise Voltage Density (f = 1kHz)25-11--11-nV/√Hz
Input Noise Current Density (f = 1kHz)25-0.16--0.16-pA/√Hz
Common Mode RangeFull±11±12-±11±12-V
TRANSFER CHARACTERISTICS
Large Signal Voltage Gain (Notes 3, 6)25100150-80150-kV/V
Common Mode Rejection Ratio (Note 4)Full80100-74100-dB
Minimum Stable Gain251--1--V/V
Gain Bandwidth Product (Note 5)25-12--12-MHz
OUTPUT CHARACTERISTICS
Output Voltage Swing (Note 3)Full±10±12-±10±12-V
Output Current (Note 6)25±15±22-±10±18-mA
Full Power Bandwidth (Notes 6, 13)255075-5075-kHz
TRANSIENT RESPONSE (Note 10)
Rise Time (Notes 3, 7, 8, 9)25-3060-3060ns
Overshoot (Notes 3, 7, 8, 9)25-2540-2540%
Slew Rate (Notes 3, 7, 9, 14)25±4±7-±4±7-V/µs
Settling Time (Notes 3, 7, 15)25-1.5--1.5-µs
= ±15V, Unless Otherwise Specified
SUPPLY
TEMP.
(oC)
Full-26--7mV
Full-1030--40nA
Full-530--40nA
Full70--70--kV/V
HA-2600-2HA-2605-5
UNITSMINTYPMAXMINTYPMAX
2
HA-2600, HA-2605
Electrical SpecificationsV
PARAMETER
= ±15V, Unless Otherwise Specified (Continued)
SUPPLY
TEMP.
(oC)
HA-2600-2HA-2605-5
UNITSMINTYPMAXMINTYPMAX
POWER SUPPLY CHARACTERISTICS
Supply Current25-3 3.7-34mA
Power Supply Rejection Ratio (Note 11)Full8090-7490-dB
NOTES:
2. Typicaland minimumspecifications for -9are identical tothose of-5. All maximumspecifications for -9are identical tothose of-5 except forFull
Temperature Bias and Offset Currents, which are 70nA Max.
3. RL = 2kΩ.
4. VCM = ±10V.
5. V
6. V
OUT
OUT
< 90mV.
= ±10V.
7. CL = 100pF.
8. V
= ±200mV.
OUT
9. AV = +1.
10. See Transient Response Test Circuits and Waveforms.
11. ∆VS = ±5V.
12. This parameter value guaranteed by design calculations.
13. Full Power Bandwidth guaranteed by slew rate measurement:.
14. V
OUT
= ±5V
FPBW
Slew Rate
---------------------------=
2πV
PEAK
15. Settling time is characterized at AV = -1 to 0.1% of a 10V step.
Test Circuits and Waveforms
±200mV
INPUT
0V
±200mV
90%
OUTPUT
10%
0V
NOTE: Measured on both positive and negative transitions from
0V to +200mV and 0V to -200mV at the output.
FIGURE 1. TRANSIENT RESPONSEFIGURE 2. SLEW RATE
IN
+
-
RISE TIME
2kΩ
OUT
100pF
+5V
INPUT
-5V
+5V
90%
OUTPUT
10%
-5VSLEW RATE
∆t
V+
IN
BAL
V-
R
=∆V/∆t
100kΩ
T
∆V
COMP
C
C
OUT
FIGURE 3. SLEW RATE AND TRANSIENT RESPONSE TEST
CIRCUIT
3
NOTE: T ested offset adjustment r ange is |VOS + 1mV| minimum
referred to output. Typical ranges are ±10mV with RT = 100kΩ.
FIGURE 4. SUGGESTED VOS ADJUSTMENT AND
COMPENSATION HOOK UP
Schematic Diagram
HA-2600, HA-2605
COMPENSATION
BAL
+INPUT
-INPUT
V+
R
1K
20
R
4.18K
Q
Q
6
Q
7
Q
Q
10
Q
17
12
Q
18
15
19
8
R
2
1.56K
Q
2
Q
30
Q
29
9
Q
19
R
3
40
Q
4
1.56K
BAL
Q
39
Q
38
Q
37
Q
31
Q
28
Q
26
Q
27
21
R
4.5K
Q
Q
22
9
R
10
2.0K
16pF
Q
36
Q
32
25
Q
24
Q
23
C
4
4pF
C
3
C
9pF
Q
41
Q
42
Q
35
Q
33
Q
46
Q
49
C
1
16pF
R
11
4.0K
R
12
1.6K
Q
Q
Q
Q
45
48
R
13
1.6K
43
44
Q
47
R
2.1K
2
Q55Q
Q
50
14
R
600
Q
R
800
5
60
54
15
R
6
15
Q
61
Q
59
Q
58
Q
57
R
Q
Q
Q
51
18
56
30
OUT
R
17
53
30
Q
52
R
16
15
V-
R
1
1K
Q
1
Q
3
Q
4
Q
5
Q
Q
8
Q
Q
11
13
Q
16
Q
R
7
1.35
R
2.5K
R
P1
Q
Typical Applications
5pF
SILICON PHOTO
DIODE
= 50µA
I
P
I
B
6V
= 1nA
+
R = 40kΩ
-
HA-2600
+
BAL
VO = -R(IP± IB)
50pF (NOTE)
+6V
IN
+2V
1µs
V+
DIGITAL CONTROL
FEATURES:
1. Constant cell voltage.
2. Minimum bias current error.
DRIFT RATE =
NOTE: A small load capacitance is recommended in all applications where practical to prevent possible high frequency oscillations resulting from
external wiring parasitics. Capacitance up to 100pF has negligible effect on the bandwidth or slew rate.
FIGURE 5. PHOTO CURRENT TO VOLTAGE CONVERTERFIGURE 6. SAMPLE AND HOLD
NOTE: A small load capacitance is recommended in all applications where practical to prevent possible high frequency oscillations resulting from
external wiring parasitics. Capacitance up to 100pF has negligible effect on the bandwidth or slew rate.
FIGURE 7. REFERENCE VOLTAGE AMPLIFIERFIGURE 8. VOLTAGE FOLLOWER
+15V
+
HA-2600
-
-15V
OUT
50pF (NOTE)
Typical Performance Curves V
15
10
5
OFFSET
0
CURRENT (nA)
-5
BIAS
-10
-15
-50-250255075100 125
TEMPERATURE (oC)
= ±15V, TA = 25oC, Unless Otherwise Specified
S
FIGURE 9. INPUT BIAS CURRENT AND OFFSET CURRENT
vs TEMPERATURE
120
100
80
60
40
20
0
OPEN LOOP VOLTAGE GAIN (dB)
-20
10Hz
100Hz1kHz 10kHz 100kHz 1MHz 10MHz 100MHz
GAIN
PHASE
FREQUENCY
0
20
60
100
140
PHASE ANGLE (DEGREES)
180
100
EQUIVALENT INPUT
NOISE vs BANDWIDTH
10
10kΩ SOURCE
RESISTANCE
1
EQUIVALENT INPUT NOISE (µV)
0.1
100Hz1kHz10kHz100kHz1MHz
THERMAL NOISE
OF 10K RESISTOR
UPPER 3dB FREQUENCY
(LOWER 3dB FREQUENCY = 10Hz)
0Ω SOURCE
RESISTANCE
FIGURE 10. BROADBAND NOISE CHARACTERISTICS
1000
800
600
400
IMPEDANCE (MΩ)
200
0
-5525-156585
-35545105125
TEMPERATURE (oC)
10MHz
FIGURE 11. OPEN LOOP FREQUENCY RESPONSE
5
FIGURE 12. INPUT IMPEDANCE vs TEMPERATURE (100Hz)
HA-2600, HA-2605
Typical Performance Curves V
20
10
1
±20V SUPPLY
±15V SUPPLY
0.1
PEAK VOLTAGE SWING (±V)
0.01
10kHz
±10V SUPPLY
±5V SUPPLY
100kHz1MHz10MHz100MHz
FREQUENCY
= ±15V, TA = 25oC, Unless Otherwise Specified (Continued)
S
120
100
80
60
40
20
OPEN LOOP VOLTAGE GAIN (dB)
0
-20
10Hz100kHz1kHz
100pF
300pF
1000pF
100Hz10kHz1MHz10MHz
FREQUENCY (Hz)
NOTE: Externalcompensationcomponentsarenot required forstability ,
butmaybe added toreduce bandwidthif desired.If ExternalCompensation is used, also connect 100pF capacitor from output to ground.
0pF
10pF
30pF
FIGURE 13. OUTPUT VOLTAGE SWING vs FREQUENCYFIGURE 14. OPEN LOOP FREQUENCY RESPONSE FOR
VARIOUS VALUES OF CAPACITORS FROM
COMPENSATION PIN TO GROUND
20
-55oC TO 125oC
15
120
±20V SUPPLY
±15V SUPPLY
10
COMMON MODE RANGE (±V)
5
5101520
SUPPLY VOLTAGE (±V)
FIGURE 15. COMMON MODE VOLTAGE RANGE vs SUPPLY
VOLTAGE
120
100
80
60
40
20
COMMON MODE REJECTION RATIO (dB)
0
100Hz1kHz10kHz100kHz1MHz
FREQUENCY
o
C)
±10V SUPPLY
±5V SUPPLY
100
GAIN (dB)
80
-55-35-15525456585105125
TEMPERATURE (
FIGURE 16. OPEN LOOP VOLTAGE GAIN vs TEMPERATURE
1000
100
10
INPUT NOISE VOLTAGE (nV/√Hz)
INPUT NOISE VOLTAGE
1
1101001K10K100K
INPUT NOISE CURRENT
FREQUENCY (Hz)
10
1
0.1
0.01
Hz)
INPUT NOISE CURRENT (pA/√
FIGURE 17. COMMON MODE REJECTIONRA TIOvs FREQUENCYFIGURE 18. NOISE DENSITY vs FREQUENCY
6
Die Characteristics
HA-2600, HA-2605
DIE DIMENSIONS:
69 mils x 56mils x 19 mils
1750µm x 1420µm x 483µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
Å ±2kÅ
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
Metallization Mask Layout
+IN-IN
PASSIVATION:
TRANSISTOR COUNT:
PROCESS:
HA-2600, HA-2605
Type: Nitride (Si
Silox Thickness: 12k
) over Silox (SiO2, 5% Phos.)
3N4
Å ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
140
Bipolar Dielectric Isolation
BAL
V-
COMP
BAL
OUT
V+
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specificationsat any time without notice.Accordingly , the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
7
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