Intersil Corporation HA-2557-883 Datasheet

July 1994

HA2557/883

Wideband Four Quadrant Analog

Multiplier (Current Output)

Features

• This Circuit is Processed in Accordance to MIL-STD­883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.

• Low Multiplication Error . . . . . . . . . . . . . . . . 1.5% (Typ)

• Input Bias Currents . . . . . . . . . . . . . . . . . . . . . 8µA (Typ)

• Signal Input Feedthrough at 5MHz. . . . . . . -52dB (Typ)

• Wide Y Channel Bandwidth . . . . . . . . . . 130MHz (Typ)

• Wide X Channel Bandwidth . . . . . . . . . . . 75MHz (Typ)

• Rise Time (R

= 50Ω) . . . . . . . . . . . . . . . . . . . . 7ns (Typ)

L

• Supply Current. . . . . . . . . . . . . . . . . . . . . . . 17mA (Max)

Applications

• Military Avionics

• Missile Guidance Systems

• Medical Imaging Displays

• Video Mixers

• Sonar AGC Processors

• Radar Signal Conditioning

• Voltage Controlled Amplifier

• Vector Generator

Description

The HA-2557/883 is a monolithic, high speed, four quadrant,
analog multiplier constructed in Intersil’ Dielectrically Iso­lated High Frequency Process. The single-ended current
output of the HA-2557/883 has a 130MHz signal bandwidth
(R

= 50Ω). High bandwidth and low distortion make this part

L

an ideal component in video systems.
The suitability for precision video applications is demon-

strated further by low multiplication error (1.5%), low
feedthrough (-52dB), and differential inputs with low bias cur­rents (8µA). The HA-2557/883 is also well suited for mixer
circuits as well as AGC applications for sonar, radar, and
medical imaging equipment.

The current output of the HA-2557/883 allows it to achieve
higher bandwidths than voltage output multipliers. Full scale out­put current is trimmed to 1.6mA. An internal 2500Ω feedback
resistor is also provided to accurately convert the current, if
desired, to a full scale output voltage of ±4V. The HA-2557/883 is
not limited to multiplication applications only; frequency doubling,
power detection, as well as many other configurations are also
possible.

Ordering Information

TEMPERATURE

PART NUMBER

HA1-2557/883 -55oC to +125oC 16 Lead CerDIP

RANGE PACKAGE

Pinout

Schematic

HA-2557/883

(CERDIP)

TOP VIEW

V

V

XIO

8-12

V

BIAS

-

X

+

-

B

GND

V

16

1

GND

V

REF

V

B

YIO

V

A

YIO

+

V

Y

-

V

Y

V-

I

OUT

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

REF

2
3
4
5

Y

6
7
8

X

X

A

XIO

15

B

V

XIO

14

NC

13

+

V

X

12

-

V

X

11

V+

10

R

Z

9

NC

VX+

V

XIO

A

| Copyright © Intersil Corporation 1999

VY+

V

REF

YIO

V+

V

BIAS

I

OUT

Y

-

Y

R

Z

V

A

YIO

B

V-

Spec Number 511064-883

File Number 3638

Specifications HA2557/883

Absolute Maximum Ratings Thermal Information

Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±3mA

ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .< 2000V

Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC

Storage Temperature Range . . . . . . . . . . . . . .-65oC ≤ TA≤ +150oC

Max Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Operating Conditions

Operating Supply Voltage (±VS) . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V Operating Temperature Range . . . . . . . . . . . . -55oC ≤ TA≤ +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Tested at: V

PARAMETERS SYMBOL CONDITIONS

Multiplication Error ME VY, VX = ±4V

Linearity Error LE V
R

Accuracy RZE Nominal 2500Ω 1 +25oC-33%

Z

Offset I

I

OUT

Input Offset Voltage (V

Input Bias Current (V

Input Offset Current (V

Common Mode (V
Rejection Ratio

Power Supply (V

X

Rejection Ratio

Input Offset Voltage (V

Input Bias Current (V

Input Offset Current (V

Common Mode (V
Rejection Ratio

Power Supply (V

Y

Rejection Ratio

Supply Current I

Output Impedance Z

= ±15V, RZ (Pin 10) not connected, Unless Otherwise Specified.

SUPPLY

FS = 1.6mA

, VX = ±4V 1 +25oC -0.25 0.25 %FS

Y

VX, VY = 0V 1 +25oC -10 10 µA

VY = ±4V 1 +25oC -15 15 mV

)VX = 0V, VY = 4V 1 +25oC -15 15 µA

)VX = 0V, VY = 4V 1 +25oC-22µA

)V

X

)I

X

)I

X

)

X

CMRR(VX)VXCM = ±10V

OO

XIO

B(VX

IO(VX

VY = 4V

)

+ PSRR(VX) V+ = +12V to +17V

VY = 4V

- PSRR(V

) V- = -12V to -17V

X

VY= 4V

)V

Y

)I

Y

)I

Y

)

Y

CMRR(VY)VYCM = +9V, -10V

YIO

B(VY

IO(VY

VX = ±4V 1 +25oC -15 15 mV

)VY = 0V, VX = 4V 1 +25oC -15 15 µA

)VY = 0V, VX = 4V 1 +25oC-22µA

VX = 4V

)

+ PSRR(VY) V+ = +12V to +17V

VX = 4V

- PSRR(V

) V- = -12V to -17V

Y

VX= 4V

CC

OUT

VX, VY = 0V 1 +25oC - 17 mA

V

= ±10V 1 +25oC 1.0 - MΩ

OUT

Thermal Resistance θ

JA

θ

CerDIP Package . . . . . . . . . . . . . . . . . . . . 82oC/W 27oC/W

Maximum Package Power Dissipation at +75oC

CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.22W

Package Power Dissipation Derating Factor above +75oC

CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/oC

GROUP A

SUBGROUPS TEMPERATURE

LIMITS

UNITSMIN MAX

1 +25oC -3 3 %FS

2, 3 +125

2, 3 +125

2, 3 +125

2, 3 +125

2, 3 +125

2, 3 +125

o

C, -55oC -6 6 %FS

o

C, -55oC-55%

o

C, -55oC -15 15 µA

o

C, -55oC -25 25 mV

o

C, -55oC -25 25 µA

o

C, -55oC-33µA

1 +25oC65-dB

o

2, 3 +125

C, -55oC65-dB

1 +25oC65-dB

o

2, 3 +125

C, -55oC65-dB

1 +25oC45-dB

2, 3 +125

2, 3 +125

2, 3 +125

2, 3 +125

o

C, -55oC45-dB

o

C, -55oC -25 25 mV

o

C, -55oC -25 25 µA

o

C, -55oC-33µA

1 +25oC65-dB

o

2, 3 +125

C, -55oC65-dB

1 +25oC65-dB

o

2, 3 +125

C, -55oC65-dB

1 +25oC45-dB

o

2, 3 +125

2, 3 +125

C, -55oC45-dB

o

C, -55oC - 17 mA

JC

8-13

Spec Number 511064-883

HA2557/883

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

Table 2 Intentionally Left Blank. See AC Specifications in Table 3

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Tested at: V

PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE

VY, CHARACTERISTICS
Bandwidth BW(VY) -3dB, VX = 4V,

AC Feedthrough V

Rise and Fall Time TR, T

Overshoot +OS, -OS VY = -4V to +4V Step

Differential Input
Resistance

VX CHARACTERISTICS
Bandwidth BW(VX) -3dB, VY = 4V,

AC Feedthrough V

Rise and Fall Time TR, T

Overshoot +OS, -OS VX = -4V to +4V Step

Differential Input
Resistance

NOTE:

1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param­eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.

2. Offset voltage applied to minimize feedthrough signal.

= ±15V, RZ (Pin 10) not connected, Unless Otherwise Specified.

SUPPLY

ISO

VY≤ 200mV
fO = 5MHz,

VY = 200mV

P-P

P-P

VX = Nulled
VY = -4V to +4V Step

F

VX = 4V,
10% to 90% pts

VX = 4V

RIN(VY)VY = ±4V, VX = 0V 1 +25oC 650 - kΩ

ISO

VX≤ 200mV
fO = 5MHz,

VX = 200mV

P-P

P-P

VY = Nulled
VX = -4V to +4V Step

F

VY = 4V, 10% to 90% pts

VY = 4V

RIN(VX)VX = ±4V, VY = 0V 1 +25oC 650 - kΩ

LIMITS

UNITSMIN MAX

1 +25oC 90 - MHz

1, 2 +25oC - -48 dB

1 +25oC - 10 ns

1 +25oC - 10 %

1 +25oC 60 - MHz

1, 2 +25oC - -50 dB

1 +25oC - 10 ns

1 +25oC - 15 %

TABLE 4. ELECTRICAL TEST REQUIREMENTS

MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLE 1)

Interim Electrical Parameters (Pre Burn-In) -

Final Electrical Test Parameters 1 (Note 1), 2, 3

Group A Test Requirements 1, 2, 3

Groups C and D Endpoints 1

NOTE:

1. PDA applies to Subgroup 1 only.

8-14

Spec Number 511064-883

Die Characteristics

DIE DIMENSIONS:

71mils x 100mils x 19mils ± 1mils

METALLIZATION:

Type: Al, 1% Cu
Thickness: 16k

Å ± 2kÅ

GLASSIVATION:

Type: Nitride (Si
Silox Thickness: 12k

) over Silox (SiO2, 5% Phos)

3N4

Å ± 2kÅ

Nitride Thickness: 3.5kÅ ± 1.5kÅ

TRANSISTOR COUNT: 72
SUBSTRATE POTENTIAL: V-
WORST CASE CURRENT DENSITY:

0.47 x 10

5

A/cm2

Metallization Mask Layout

HA2557/883

HA-2557/883

V

YIO

V

YIO

VY+ (5)

VY- (6)

B (3)
A (4)

REF

(2) V

(1) GND

A

XIO

(16) V

B

XIO

(15) V

(13) VX+

(12) VX-

(11) V+

V- (7)

(8)

OUT

I

8-15

(10)

Z

R

Spec Number 511064-883

Test Circuits

NC

1

50Ω

REF

2
3
4
5
6
7
8

X

Y

V

OUT

NC
NC
NC

V

-15V

+

Y

FIGURE 1. AC AND TRANSIENT RESPONSE TEST CIRCUIT

16
15

NC

14

NC

13

+

V

X

X

12
11

+15V

10

NC

9

NC

HA2557/883

VY TRANSIENT RESPONSE

Vertical Scale: Top 5V/Div. Bottom: 100mV/Div.

Horizontal Scale: 20ns/Div.

Burn-In Circuit

- 15.5V

±0.5V

HA-2557/883 CERAMIC DIP

1

REF

2

NC

3

NC

4

NC

+

V

Y

5

Y

6

I

7
8

OUT

D1

0.01µF

D1 = D2 = 1N4002 OR EQUIVALENT (PER BOARD)

X

X

16

NC

15

NC

14

NC
V

+

X

13
12

0.01µF

+15.5 V
±0.5V

11

R

Z

10

9

D2

NC

8-16

Spec Number 511064-883