Intersil Corporation HA-2556-883 Datasheet

July 1994

HA2556/883

Wideband Four Quadrant Analog

Multiplier (Voltage Output)

Features

• This Circuit is Processed in Accordance to MIL-STD­883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.

• High Speed Voltage Output. . . . . . . . . . . 450V/µs (Typ)

• Low Multiplication error . . . . . . . . . . . . . . . . 1.5% (Typ)

• Input Bias Currents . . . . . . . . . . . . . . . . . . . . . 8µA (Typ)

• Signal Input Feedthrough . . . . . . . . . . . . . . -50dB (Typ)

• Wide Y Channel Bandwidth . . . . . . . . . . . 57MHz (Typ)

• Wide X Channel Bandwidth . . . . . . . . . . . 52MHz (Typ)

• 0.1dB Gain Flatness (V

). . . . . . . . . . . . . . 5.0MHz (Typ)

Y

Applications

• Military Avionics

• Missile Guidance Systems

• Medical Imaging Displays

• Video Mixers

• Sonar AGC Processors

• Radar Signal Conditioning

• Voltage Controlled Amplifier

• Vector Generator

Description

The HA-2556/883 is a monolithic, high speed, four quadrant,
analog multiplier constructed in Intersil’ Dielectrically
Isolated High Frequency Process. The voltage output
simplifies many designs by eliminating the current-to-voltage
conversion stage required for current output multipliers. The
HA-2556/883 provides a 450V/µs output slew rate and
maintains 52MHz and 57MHz bandwidths for the X and Y
channels respectively, making it an ideal part for use in video
systems.

The suitability for precision video applications is
demonstrated further by the Y Channel 0.1dB gain flatness
to 5.0MHz, 1.5% multiplication error, -50dB feedthrough and
differential inputs with 8µA bias current. The HA-2556 also
has low differential gain (0.1%) and phase (0.1

o

) errors.

The HA-2556/883 is well suited for AGC circuits as well as
mixer applications for sonar, radar, and medical imaging
equipment. The HA-2556/883 is not limited to multiplication
applications only; frequency doubling, power detection, as
well as many other configurations are possible.

Ordering Information

TEMPERATURE

PART NUMBER

HA1-2556/883 -55oC to +125oC 16 Lead CerDIP

RANGE PACKAGE

Pinout

Simplified Schematic

HA-2556/883

(CERDIP)

TOP VIEW

V

XIO

VX-

BIAS

B

+

-

8-7

GND

+

V

Y

REF

V

AV

YIO

16

V

1

GND

V

REF

V

YIO

V

YIO

V

V

V

OUT

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

REF

2
3

B

4

A

5

+

Y

Y

6

-

Y

7

V-

8

X

+

-

Σ

Z

A

XIO

15

B

V

XIO

14

NC

13

+

V

X

V

12

-

X

V+

11
10

VZ-

9

+

V

Z

VX+

V

AV

XIO

| Copyright © Intersil Corporation 1999

VY-

YIO

V+

V

BIAS

+

V

Z

B

VZ-

V+

OUT

V-

Spec Number 511063-883

File Number 3619

Specifications HA2556/883

Absolute Maximum Ratings Thermal Information

Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±40mA

ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .< 2000V

Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC

Storage Temperature Range . . . . . . . . . . . . . .-65oC ≤ TA≤ +150oC

Max Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Operating Conditions

Operating Supply Voltage (±VS) . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V Operating Temperature Range . . . . . . . . . . . . -55oC ≤ TA≤ +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Tested at: V

PARAMETERS SYMBOL CONDITIONS

Multiplication Error ME VY, VX = ±5V 1 +25oC -3 3 %FS

Linearity Error LE4V VY, VX = ±4V 1 +25oC -0.5 0.5 %FS

Input Offset Voltage (VX)V

Input Bias Current (VX)I

Input Offset Current (VX)IIO (VX)VX = 0V, VY = 5V 1 +25oC-22µA

Common Mode (VX)
Rejection Ratio

Power Supply (VX)
Rejection Ratio

Input Offset Voltage (VY)V

Input Bias Current (VY)I

Input Offset Current (VY)IIO (VY)VY = 0V, VX = 5V 1 +25oC-22µA

Common Mode (VY)
Rejection Ratio

Power Supply (VY)
Rejection Ratio

= ±15V, RF = 50Ω, RL = 1kΩ, CL = 20pF, Unless Otherwise Specified.

SUPPLY

LE5V VY, VX = ±5V 1 +25oC -1 1 %FS

XIO

(VX)VX = 0V, VY = 5V 1 +25oC -15 15 µA

B

VY = ±5V 1 +25oC -15 15 mV

CMRR (VX)VXCM = ±10V

VY = 5V

+PSRR (VX)VCC = +12V to +17V

VY = 5V

-PSRR (VX)VEE = -12V to -17V
VY= 5V

YIO

(VY)VY = 0V, VX = 5V 1 +25oC -15 15 µA

B

VX = ±5V 1 +25oC -15 15 mV

CMRR (VY)VYCM = +9V, -10V

VX = 5V

+PSRR (VY)VCC = +12V to +17V

VX = 5V

-PSRR (VY)VEE = -12V to -17V
VX= 5V

Thermal Resistance θ

JA

CerDIP Package . . . . . . . . . . . . . . . . . . . 82oC/W 27oC/W

Maximum Package Power Dissipation at +75oC

CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.22W

Package Power Dissipation Derating Factor above +75oC

CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/oC

GROUP A

SUBGROUPS TEMPERATURE

LIMITS

UNITSMIN MAX

2, 3 +125oC, -55oC -6 6 %FS

2, 3 +125oC, -55oC -25 25 mV

2, 3 +125oC, -55oC -25 25 µA

2, 3 +125oC, -55oC-33µA

1 +25oC65-dB

2, 3 +125oC, -55oC65-dB

1 +25oC65-dB

2, 3 +125oC, -55oC65-dB

1 +25oC45-dB

2, 3 +125oC, -55oC45-dB

2, 3 +125oC, -55oC -25 25 mV

2, 3 +125oC, -55oC -25 25 µA

2, 3 +125oC, -55oC-33µA

1 +25oC65-dB

2, 3 +125oC, -55oC65-dB

1 +25oC65-dB

2, 3 +125oC, -55oC65-dB

1 +25oC45-dB

2, 3 +125oC, -55oC45-dB

θ

JC

8-8

Spec Number 511063-883

Specifications HA2556/883

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

Device Tested at: V

PARAMETERS SYMBOL CONDITIONS

Input Offset Voltage (VZ)V

Input Bias Current (VZ)I

Input Offset Current (VZ)IIO (VZ)VX= 0V, VY= 0V 1 +25oC-22µA

Common Mode (VZ)
Rejection Ratio

Power Supply (VZ)
Rejection Ratio

Output Current +I

Output Voltage Swing +V

Supply Current ±I

= ±15V, RF = 50Ω, RL = 1kΩ, CL = 20pF, Unless Otherwise Specified.

SUPPLY

GROUP A

SUBGROUPS TEMPERATURE

ZIO

VX = 0V, VY = 0V 1 +25oC -15 15 mV

2, 3 +125oC, -55oC -25 25 mV

(VZ)VX = 0V, VY = 0V 1 +25oC -15 15 µA

B

2, 3 +125oC, -55oC -25 25 µA

2, 3 +125oC, -55oC-33µA

CMRR (VZ)VZCM = ±10V

VX = 0V, VY = 0V

+PSRR (VZ)VCC = +12V to +17V

VX = 0V, VY = 0V

-PSRR (VZ)VEE = -12V to -17V
VX= 0V, VY = 0V

V

OUT

= 5V, RL = 250Ω 1 +25oC20-mA

OUT

1 +25oC65-dB

2, 3 +125oC, -55oC65-dB

1 +25oC65-dB

2, 3 +125oC, -55oC65-dB

1 +25oC45-dB

2, 3 +125oC, -55oC45-dB

2, 3 +125oC, -55oC20-mA

-I

OUT

V

= 5V, RL = 250Ω 1 +25oC - -20 mA

OUT

2, 3 +125oC, -55oC - -20 mA

OUT

RL = 250Ω 1 +25oC5-V

2, 3 +125oC, -55oC5-V

-V

OUT

RL = 250Ω 1 +25oC - -5 V

2, 3 +125oC, -55oC - -5 V

CC

VX, VY = 0V 1 +25oC - 22 mA

2, 3 +125oC, -55oC - 22 mA

LIMITS

UNITSMIN MAX

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

Table 2 Intentionally Left Blank. See AC Specifications in Table 3.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Tested: at V

= ±15V, RF = 50Ω, RL = 1kΩ, CL = 20pF, Unless Otherwise Specified.

SUPPLY

PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE

VY, VZ CHARACTERISTICS (NOTE 2)
Bandwidth BW(VY) -3dB, VX = 5V,

VY≤ 200mV

P-P

Gain Flatness GF(VY) 0.1dB, VX = 5V,

AC Feedthrough V

ISO

VY≤ 200mV
fO = 5MHz,

VY = 200mV

P-P

P-P

1 +25oC 30 - MHz

1 +25oC 4.0 - MHz

1, 3 +25oC - -45 dB

VX = Nulled

Rise and Fall Time TR, T

VY = 200mV Step,

F

VX = 5V,
10% to 90% pts

1 +25oC - 9.5 ns
1 +125oC, -55oC - 10 ns

8-9

LIMITS

UNITSMIN MAX

Spec Number 511063-883

Specifications HA2556/883

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

Device Tested: at V

PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE

Overshoot +OS, -OS VY = 200mV step,

Slew Rate +SR, -SR VY = 10V step,

Differential Input
Resistance

VX CHARACTERISTICS
Bandwidth BW (VX) -3dB, VY = 5V,

Gain Flatness GF (VX) 0.1dB, VY = 5V,

AC Feedthrough V

Rise & Fall Time TR, T

Overshoot +OS, -OS VX = 200mV step,

Slew Rate +SR, -SR VX = 10V step,

Differential Input
Resistance

OUTPUT CHARACTERISTICS
Output Resistance R

NOTES:

1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param­eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.

2. VZ AC characteristics may be implied from VY due to the use of VZ as feedback in the test circuit.

3. Offset voltage applied to minimize feedthrough signal.

= ±15V, RF = 50Ω, RL = 1kΩ, CL = 20pF, Unless Otherwise Specified.

SUPPLY

1 +25oC - 35 %

VX = 5V

1 +125oC, -55oC - 50 %
1 +25oC 410 - V/µs

VX = 5V

1 +125oC, -55oC 360 - V/µs

RIN (VY)VY = ±5V, VX = 0V 1 +25oC 650 - kΩ

1 +25oC 30 - MHz

VX≤ 200mV

P-P

1 +25oC 2.0 - MHz

ISO

VX≤ 200mV
fO = 5MHz,

VX = 200mV

P-P

1, 3 +25oC--45dB

P-P

VY = Nulled
VX = 200mV step,

F

VY = 5V,
10% to 90% pts

1 +25oC - 9.5 ns
1 +125oC, -55oC - 10 ns

1 +25oC - 35 %

VY = 5V

1 +125oC, -55oC - 50 %
1 +25oC 410 - V/µs

VY = 5V

1 +125oC, -55oC 360 - V/µs

RIN (VX)VX = ±5V, VY = 0V 1 +25oC 650 - kΩ

OUT

VY = ±5V, VX = 5V

1 +25oC-1Ω

RL = 1kΩ to 250Ω

LIMITS

UNITSMIN MAX

TABLE 4. ELECTRICAL TEST REQUIREMENTS

MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLE 1)

Interim Electrical Parameters (Pre Burn-In) -

Final Electrical Test Parameters 1 (Note 1), 2, 3

Group A Test Requirements 1, 2, 3

Groups C and D Endpoints 1

NOTE:

1. PDA applies to Subgroup 1 only. No other subgroups are included in PDA.

8-10

Spec Number 511063-883

Die Characteristics

DIE DIMENSIONS:

71mils x 100mils x 19mils ± 1mils

METALLIZATION:

Type: Al, 1% Cu
Thickness: 16k

GLASSIVATION:

Type: Nitride (Si
Silox Thickness: 12k
Nitride Thickness: 3.5kÅ ± 1.5kÅ

TRANSISTOR COUNT: 84
SUBSTRATE POTENTIAL: V-

Å ±2kÅ

) over Silox (SiO2, 5% Phos)

3N4

Å ± 2kÅ

HA2556/883

WORST CASE CURRENT DENSITY:

0.47 x 105A/cm

2

Metallization Mask Layout

V

B (3)

YIO

V

A(4)

YIO

V

+(5)

Y

HA-2556/883

V

GND

REF

(2)

(1)

V

XIO

(16)

V

XIO

(15)

B

+(13)

V

X

-(12)

V

X

A

-(6)

V

Y

V+(11)

(7)
V-

(8)

V

OUT

(9)

(10)

V

+

VZ-

Z

Spec Number 511063-883

8-11

Test Waveforms

HA2556/883

LARGE AND SMALL SIGNAL RESPONSE TEST CIRCUIT

1
NC
NC
NC

VY+

-15V

2

3

4

5

6

7

8

LARGE SIGNAL RESPONSE SMALL SIGNAL RESPONSE

0ns 500ns 1µs

8

4

REF

+

-

50Ω

16

NC

15

NC

14

NC

13

V

+

+

-

+

-

-

Σ

+

X

12
11

+15 V

VZ-

10

9

VZ+

1K

0ns 250ns 500ns

200

100

V

OUT

20pF

0

OUTPUT (V)

-4

= ±4V PULSE

V

X

= 5V

V

Y

-8

DC

Burn-In Circuit

0

OUTPUT (mV)

-100

-200

VY = ±100mV PULSE

= 5V

V

X

DC

2V/DIV; 100ns/DIV 50mV/DIV; 50ns/DIV

HA-2556/883 CERAMIC DIP

NC

16

NC

15
14

NC

+

V

13

+

-

12
11

+

10

-

-

Σ

+

9

VZ-

V

X

+15.5V
±0.5V

D2

+

Z

0.01µF

-15.5V

±0.5V

D1

V

Y

NC
NC
NC

+

0.01µF

V

OUT

1

REF

2
3
4
5

+

-

6
7
8

D1 = D2 = 1N4002 OR EQUIVALENT (PER BOARD)

8-12

Spec Number 511063-883