Intersil Corporation FSYC9055R, FSYC9055D Datasheet
July 1999
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Features
FSYC9055D, FSYC9055R
OBSOLETE PRODUCT
POSSIBLE SUBSTITUTE PRODUCT
FSTYC9055D, FSTYC9055R
Radiation Hardened, SEGR Resistant
P-Channel Power MOSFETs
Description
[ /Title
(FSYC
9055D,
FSYC
9055R)
Sub-
ect
(Radiation
Hardened,
SEGR
Resistant
PChannel
Power
MOSFETs)
Autho
r ()
Keywords
(Radiation
Hardened,
SEGR
Resistant PChannel
Power
MOSFETs)
Creator ()
DOCI
• 59A, -60V, r
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
V
up to 80% of Rated Breakdown and
DS
V
of 10V Off-Bias
GS
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
• Photo Current
- 6nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm
- Usable to 3E14Neutrons/cm2g
DS(ON)
= 0.027Ω
2
2
with
DSS
DM
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSYC9055D1
10K TXV FSYC9055D3
100K Commercial FSYC9055R1
100K TXV FSYC9055R3
100K Space FSYC9055R4
Formerly available as type TA17750.
Package
The Discrete Products Operation of Harris Semiconductor
has developed a series of Radiation Hardened MOSFETs
specifically designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh
space environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Harris portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Harris Semiconductor for any
desired deviations from the data sheet.
Symbol
D
G
S
SMD-2
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
© Harris Corporation 1999
1
File Number 4525.1
FSYC9055D, FSYC9055R
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
FSYC9055D, FSYC9055R UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
DGR
-60 V
-60 V
Continuous Drain Current
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
D
D
DM
GS
59 A
38 A
177 A
±20 V
Maximum Power Dissipation
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
T
162 W
65 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.30 W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . .I
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
AS
S
SM
L
177 A
59 A
177 A
-55 to 150
300
o
C
o
C
(Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
DSSID
GS(TH)VGS
= 1mA, VGS = 0V -60 - - V
= VDS,
ID = 1mA
TC = -55oC - - -7.0 V
TC = 25oC -2.0 - -6.0 V
TC = 125oC -1.0 - - V
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
DSS
GSS
VDS = -48V,
VGS = 0V
TC = 25oC--25µA
TC = 125oC - - 250 µA
VGS = ±20V TC = 25oC - - 100 nA
TC = 125oC - - 200 nA
Drain to Source On-State Voltage V
Drain to Source On Resistance r
Turn-On Delay Time t
DS(ON)VGS
DS(ON)12ID
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge Q
g(TOT)VGS
Gate Charge at 12V Q
Threshold Gate Charge Q
Gate Charge Source Q
Gate Charge Drain Q
Plateau Voltage V
(PLATEAU)ID
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
r
f
g(12)
g(TH)
gs
gd
ISS
OSS
RSS
JC
θ
= -12V, ID = 59A - - -1.79 V
= 38A,
VGS = -12V
VDD = -30V, ID = 59A,
RL = 0.51Ω, VGS = -12V,
RGS = 2.35Ω
TC = 25oC - 0.017 0.027 Ω
TC = 125oC - - 0.043 Ω
- - 55 ns
- - 35 ns
- - 85 ns
- - 35 ns
= 0V to -20V VDD = -30V,
VGS = 0V to -12V - 140 160 nC
ID = 59A
- - 280 nC
VGS = 0V to -2V - - 17 nC
-3849nC
-2638nC
= 59A, VDS = -15V - -6 - V
VDS = -25V, VGS = 0V,
f = 1MHz
- 6100 - pF
- 2200 - pF
- 300 - pF
- - 0.77
o
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage V
Reverse Recovery Time t
SD
rr
ISD = 59A -0.6 - -1.8 V
ISD = 59A, dISD/dt = 100A/µs - - 120 ns
2
FSYC9055D, FSYC9055R
Electrical Specifications up to 100K RAD T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS
Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r
DS(ON)VGS
DS(ON)12VGS
DSS
GS(TH)VGS
GSS
DSS
VGS = 0, ID = 1mA -60 - V
= VDS, ID = 1mA -2.0 -6.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = -48V - 25 µA
= -12V, ID = 59A - -1.79 V
= -12V, ID = 38A - 0.027 Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BV
DSS
.
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
APPLIED
V
GS
TEST SYMBOL
Single Event Effects Safe Operating
Area
ION
SPECIES
SEESOA Ni 26 43 20 -60
Br 37 36 10 -60
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
Br 37 36 15 -48
Br 37 36 20 -36
I 60 31 0 -60
I 60 31 5 -48
I 60 31 10 -36
I 60 31 15 -24
I 60 31 20 -12
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
2
5. Fluence = 1E5 ions/cm
(typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
BIAS
(V)
(NOTE 6)
MAXIMUM
VDS BIAS
(V)
Typical Performance Curves
1 2 3 -
(V)
DS
V
-70
-60
-50
-40
-30
-20
-10
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
TEMP = 25oC
0
0101520 25
LET = 26MeV/mg/cm
LET = 37MeV/mg/cm2, RANGE = 36µ
LET = 60MeV/mg/cm
5
V
(V)
GS
Unless Otherwise Specified
2
, RANGE = 43µ
2
, RANGE = 31
µ
1
2
3
1E-3
1E-4
1E-5
1E-6
LIMITING INDUCTANCE (HENRY)
1E-7
-30
DRAIN SUPPLY (V)
ILM = 10A
30A
100A
300A
-300-100-10
-1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
3
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