Intersil Corporation FSYC360R, FSYC360D Datasheet

FSYC360D, FSYC360R

Data Sheet February 2000 File Number 4791

Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs

The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs
specifically designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100K RADS of total dose
hardness to providedeviceswhichareideallysuitedtoharsh
space environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil Corporation for any desired
deviations from the data sheet.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K Commercial FSYC360D1
100K TXV FSYC360R3
100K Space FSYC360R4

Features

• 21A, 400V, r

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm
V

up to 80% of Rated Breakdown and

DS

V

of 10V Off-Bias

GS

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 35nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications
for 3E12 Neutrons/cm

- Usable to 3E13 Neutrons/cm

DS(ON)

= 0.210Ω

2

2

with

2

Symbol

D

G

S

Packaging

SMD2

DSS

DM

Formerly available as type TA45206.

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

FSYC360D, FSYC360R

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

FSYC360D, FSYC360R UNITS

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DS

DGR

400 V
400 V

Continuous Drain Current

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

D
D

DM

GS

21 A
13 A
63 A

±20 V

Maximum Power Dissipation

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T
T

208 W

83 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .I

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

AS

S

SM

L

63 A
21 A
63 A

-55 to 150
300

o

C

o

C

(Distance >0.063in (1.6mm) from Case, 10s Max)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

DSSID

GS(TH)VGS

= 1mA, VGS = 0V 400 - - V

= VDS,

ID = 1mA

TC = -55oC - - 5.0 V
TC = 25oC 1.5 - 4.0 V
TC = 125oC 0.5 - - V

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

DSS

GSS

VDS = 320V,
VGS = 0V

TC = 25oC--25µA
TC = 125oC - - 250 µA

VGS = ±20V TC = 25oC - - 100 nA

TC = 125oC - - 200 nA
Drain to Source On-State Voltage V
Drain to Source On Resistance r

Turn-On Delay Time t

DS(ON)VGS

DS(ON)12ID

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 12V Q
Threshold Gate Charge Q
Gate Charge Source Q
Gate Charge Drain Q
Plateau Voltage V

(PLATEAU)ID

r

f

g(12)

g(TH)

gs

gd

= 12V, ID = 21A - - 4.85 V

= 13A,

VGS = 12V

VDD = 200V, ID = 21A,
RL = 9.5Ω, VGS = 12V,
RGS = 2.35Ω

TC = 25oC - 0.190 0.210 Ω

TC = 125oC - - 0.410 Ω

- - 45 ns

- - 45 ns

- - 120 ns

- - 25 ns

= 0V to 20V VDD = 200V,

VGS = 0V to 12V - 160 180 nC

ID = 21A

- - 280 nC

VGS = 0V to 2V - - 9 nC

-2630nC

-8292nC

= 21A, VDS = 15V - 7 - V

2

FSYC360D, FSYC360R

Electrical Specifications T

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R

= 25oC, Unless Otherwise Specified (Continued)

C

ISS
OSS
RSS

θ

VDS = 25V, VGS = 0V,
f = 1MHz

JC

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V
Reverse Recovery Time t

SD

rr

Electrical Specifications up to 100K RAD T

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r

NOTES:

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BV

ISD = 21A 0.6 - 1.8 V
ISD = 21A, dISD/dt = 100A/µs - - 1100 ns

= 25oC, Unless Otherwise Specified

C

DSS

GS(TH)VGS

GSS
DSS

DS(ON)VGS

DS(ON)12VGS

VGS = 0, ID = 1mA 400 - V

= VDS, ID = 1mA 1.5 4.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = 320V - 25 µA

= 12V, ID = 21A - 4.85 V

= 12V, ID = 13A - 0.210 Ω

- 4100 - pF

- 520 - pF

- 160 - pF

- - 0.6

.

DSS

o

C/W

Single Event Effects (SEB, SEGR) Note 4

ENVIRONMENT (NOTE 5)

ION

TEST SYMBOL

Single Event Effects Safe Operating Area SEESOA Ni 26 43 -15 400

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

SPECIES

Ni 26 43 -20 360
Br 37 36 -5 400
Br 37 36 -10 320
Br 37 36 -15 200
Br 37 36 -20 80

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (µ)

APPLIED

VGS BIAS

(V)

(NOTE 6)

MAXIMUM

VDSBIAS (V)

3