Intersil Corporation FSYC163R, FSYC163D Datasheet

FSYC163D, FSYC163R

Data Sheet May 1999 File Number

Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developeda
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity toSingleEvent Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.

Ordering Information

Features

• 62A, 130V, r

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm
V

up to 80% of Rated Breakdown and

DS

V

of 10V Off-Bias

GS

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 12.5nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

DS(ON)

= 0.030Ω

2

2

with

2

Symbol

D

G

S

Packaging

SMD2

4740

DSS

DM

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K Commercial FSYC163D1
10K TXV FSYC163D3
100K Commercial FSYC163R1
100K TXV FSYC163R3
100K Space FSYC163R4

Formerly available as type TA45203.

4-1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

FSYC163D, FSYC163R

Absolute Maximum Ratings

FSYC163D, FSYC163R UNITS

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DS

DGR

Continuous Drain Current

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

D
D

DM

GS

Maximum Power Dissipation

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T
T

Derated Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .I

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

AS

S

SM

STG

L

(Distance >0.063in (1.6mm) from Case, 10s Max)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

130 V
130 V

62 A

39 A
186 A
±20 V

208 W

83 W

186 A

62 A
186 A

-55 to 150
300

o

C

o

C

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain to Source On-State Voltage V
Drain to Source On Resistance r

DS(ON)12ID

Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate Charge at 12V Q
Threshold Gate Charge Q
Gate Charge Source Q
Gate Charge Drain Q
Plateau Voltage V

(PLATEAU)ID

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R

DSSID

GS(TH)VGS

= 1mA, VGS = 0V 130 - - V

ID = 1mA

DSS

VDS = 104V,
VGS = 0V

GSS

DS(ON)VGS

VGS = ±20V TC = 25oC - - 100 nA

= 39A,

VGS = 12V

d(ON)

d(OFF)

g(TOT)VGS

g(12)

g(TH)

gd

VDD = 65V, ID = 62A,
RL = 1.0Ω, VGS = 12V,

r

RGS = 2.35Ω

f

VGS = 0V to 12V - 170 200 nC
VGS = 0V to 2V - - 8.2 nC

gs

= 62A, VDS = 15V - 8 - V

ISS
OSS
RSS

θ

VDS = 25V, VGS = 0V,
f = 1MHz

JC

= VDS,

TC = -55oC - - 5.0 V
TC = 25oC 1.5 - 4.0 V
TC = 125oC 0.5 - - V
TC = 25oC--25µA
TC = 125oC - - 250 µA

TC = 125oC - - 200 nA

= 12V, ID = 62A - - 1.95 V

TC = 25oC - 0.022 0.030 Ω
TC = 125oC - - 0.049 Ω

- - 50 ns

- - 210 ns

- - 100 ns

- - 45 ns

= 0V to 20V VDD = 65V,

- - 300 nC

ID = 62A

-2834nC

- 94 120 nC

- 4300 - pF

- 1300 - pF

- 500 - pF

- - 0.6

o

C/W

4-2

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V
Reverse Recovery Time t

SD

rr

FSYC163D, FSYC163R

ISD = 62A 0.6 - 1.8 V
ISD = 62A, dISD/dt = 100A/µs - - 670 ns

Electrical Specifications up to 100K RAD T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r

DS(ON)VGS

DS(ON)12VGS

DSS

GS(TH)VGS

GSS
DSS

VGS = 0, ID = 1mA 130 - V

= VDS, ID = 1mA 1.5 4.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = 104V - 25 µA

= 12V, ID = 62A - 1.95 V

= 12V, ID = 39A - 0.030 Ω

NOTES:

1. Pulse test, 300µs max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BV

DSS

.

Single Event Effects (SEB, SEGR) Note 4

ENVIRONMENT (NOTE 5)

TEST SYMBOL

ION

SPECIES

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (µ)

Single Event Effects Safe Operating Area SEESOA Ni 26 43 -20 130

Br 37 36 -5 130
Br 37 36 -10 104
Br 37 36 -15 78
Br 37 36 -20 52

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

APPLIED

VGS BIAS

(V)

(NOTE 6)

MAXIMUM

VDSBIAS (V)

Typical Performance Curves

LET = 26MeV/mg/cm
LET = 37MeV/mg/cm2, RANGE = 36µ

FLUENCE = 1E5 IONS/cm2 (TYPICAL)

140

120

100

80

(V)

DS

V

60

40

20

TEMP = 25oC

0

0 -10 -15 -20 -25-5

(V)

V

GS

Unless Otherwise Specified

2

, RANGE = 43µ

LIMITING INDUCTANCE (HENRY)

1E-3

1E-4

1E-5

1E-6

1E-7

30

DRAIN SUPPLY (V)

ILM = 10A

30A

100A

300A

30010010

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT

GAMMA DOT CURRENT TO I

AS

4-3

1000