Intersil Corporation FSYC055R, FSYC055D Datasheet

July 1998

FSYC055D,

FSYC055R

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFETs

Features

• 70A (Note), 60V, r

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm
V

up to 80% of Rated Breakdown and

DS

V

of 10V Off-Bias

GS

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 6.0nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cmg

DS(ON)

= 0.012Ω

2

2

with

DSS

Ordering Information

RAD LEVEL SCREENING LEVEL PART NO./BRAND

10K Commercial FSYC055D1
10K TXV FSYC055D3
100K Commercial FSYC055R1
100K TXV FSYC055R3
100K Space FSYC055R4

Formerly available as type TA17650.

DM

Description

The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space environ­ments. The dose rate and neutron tolerance necessary for
military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc­ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula­tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.

Symbol

D

Packaging

SMD-2

NOTE:
Current limited by package capability.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

1

G

S

File Number 4526

FSYC055D, FSYC055R

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

FSYC055D, FSYC055R UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DS

DGR

60 V
60 V

Continuous Drain Current

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

D
D

DM

GS

70 (Note) A

56 A
200 A
±20 V

Maximum Power Dissipation

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T
T

162 W

65 W

Derated Above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.30 W/oC

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . .I

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

AS

S

SM

L

200 A

70 A

200 A

-55 to 150
300

o

C

o

C

(Distance >0.063in (1.6mm) from Case, 10s Max)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE: Current limited by package capability.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

DSSID

GS(TH)VGS

= 1mA, VGS = 0V 60 - - V

= VDS,

ID = 1mA

TC = -55oC - - 5.0 V
TC = 25oC 1.5 - 4.0 V
TC = 125oC 0.5 - - V

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

DSS

GSS

VDS = 48V,
VGS = 0V

TC = 25oC--25µA
TC = 125oC - - 250 µA

VGS = ±20V TC = 25oC - - 100 nA

TC = 125oC - - 200 nA
Drain to Source On-State Voltage V
Drain to Source On Resistance r

Turn-On Delay Time t

DS(ON)VGS

DS(ON)12ID

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 12V Q
Threshold Gate Charge Q
Gate Charge Source Q
Gate Charge Drain Q
Plateau Voltage V

(PLATEAU)ID

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R

r

f

g(12)

g(TH)

gs

gd

ISS
OSS
RSS

JC

θ

= 12V, ID = 70A - - 0.882 V

= 56A,

VGS = 12V
VDD = 30V, ID = 70A,

RL = 0.43Ω, VGS = 12V,
RGS = 2.35Ω

TC = 25oC - 0.008 0.012 Ω
TC = 125oC - - 0.019 Ω

- - 50 ns

- - 65 ns

- - 80 ns

- - 40 ns

= 0V to 20V VDD = 30V,

VGS = 0V to 12V - 150 170 nC

ID = 70A

- - 290 nC

VGS = 0V to 2V - - 15 nC

-4055nC

-5375nC

= 70A, VDS = 15V - 7 - V

VDS = 25V, VGS = 0V,
f = 1MHz

- 4750 - pF

- 2200 - pF

- 475 - pF

- - 0.77

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V
Reverse Recovery Time t

SD

rr

ISD = 70A 0.6 - 1.8 V
ISD = 70A, dISD/dt = 100A/µs - - 300 ns

2

FSYC055D, FSYC055R

Electrical Specifications up to 100K RAD T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate-Body Leakage (Notes 2, 3) I
Zero-Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r

DS(ON)12VGS

DSS

GS(TH)VGS

GSS
DSS

DS(ON)VGS

VGS = 0, ID = 1mA 60 - V

= VDS, ID = 1mA 1.5 4.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = 48V - 25 µA

= 12V, ID = 70A - 0.882 V

= 12V, ID = 56A - 0.012 Ω

NOTES:

1. Pulse test, 300µs max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BV

DSS

.

Single Event Effects (SEB, SEGR) Note 4

ENVIRONMENT (NOTE 5)

APPLIED

VGSBIAS

TEST SYMBOL

Single Event Effects Safe Operating
Area

ION

SPECIES

SEESOA Ni 26 43 -20 60

Br 37 36 -10 60

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (µ)

Br 37 36 -15 48
Br 37 36 -20 36

|6031060
|6031-548
| 60 31 -10 36
| 60 31 -15 24
| 60 31 -20 12

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

(V)

(NOTE 6)

MAXIMUM

VDS BIAS

(V)

Typical Performance Curves

GS

2

2

(V)

, RANGE = 43µ

, RANGE = 31µ

1E-3

1E-4

1

1E-5

2

3

LIMITING INDUCTANCE (HENRY)

1E-6

1E-7

30

DRAIN SUPPLY (V)

GAMMA DOT CURRENT TO I

ILM = 10A

30A

100A

300A

30010010

AS

3

(V)

DS

V

1 ­2 -

3 -

70

60

50

40

30

20

10

0

TEMP = 25oC

0 -10 -15 -20 -25-5

LET = 26MeV/mg/cm
LET = 37MeV/mg/cm2, RANGE = 36µ
LET = 60MeV/mg/cm

FLUENCE = 1E5 IONS/cm2 (TYPICAL)

V

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT

1000