Intersil Corporation FSYA254D Datasheet

FSYA254D, FSYA254R
Data Sheet March 1999
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developeda series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity toSingleEvent Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.
File Number
Features
• 21A, 250V, r
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm V
up to 80% of Rated Breakdown and
DS
V
of 10V Off-Bias
GS
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
• Photo Current
- 15nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm
- Usable to 1E14 Neutrons/cm
DS(ON)
= 0.150
2
2
with
2
Symbol
D
G
S
4677
DSS
DM
Formerly available as type TA17658.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NO./BRAND
10K Commercial FSYA254D1 10K TXV FSYA254D3 100K Commercial FSYA254R1 100K TXV FSYA254R3 100K Space FSYA254R4
4-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Packaging
www.intersil.com or 407-727-9207
SMD-1
| Copyright © Intersil Corporation 1999
FSYA254D, FSYA254R
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
FSYA254D, FSYA254R UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
DGR
250 V 250 V
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
D D
DM
GS
21 A 14 A 63 A
±20 V
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T T
150 W
60 W
Derated Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.20 W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . .I
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
AS
S
SM
L
63 A 21 A 63 A
-55 to 150 300
o
C
o
C
(Distance >0.063in (1.6mm) from Case, 10s (Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV Gate Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On-State Voltage V On Resistance r
Turn-On Delay Time t
DS(ON)VGS
DS(ON)12ID
d(ON)
Rise Time t Turn-Off Delay Time t
d(OFF)
Fall Time t Total Gate Charge Q
g(TOT)VGS
Gate Charge at 12V Q Threshold Gate Charge Q Gate Charge Source Q Gate Charge Drain Q Plateau Voltage V
(PLATEAU)ID
Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Thermal Resistance Junction to Case R
DSSID
DSS
GSS
r
f
g(12)
g(TH)
gs
gd
ISS OSS RSS
JC
θ
= 1mA, VGS = 0V 250 - - V
= VDS,
ID = 1mA
VDS = 200V, VGS = 0V
TC = -55oC - - 5.0 V
= 25oC 1.5 - 4.0 V
T
C
= 125oC 0.5 - - V
T
C
TC = 25oC--25µA
= 125oC - - 250 µA
T
C
VGS = ±20V TC = 25oC - - 100 nA
T
= 125oC - - 200 nA
C
= 12V, ID = 21A - - 3.31 V
= 14A,
VGS = 12V VDD = 125V, ID = 21A,
RL = 6.0, VGS = 12V, RGS = 2.35
TC = 25oC - 0.120 0.150 T
= 125oC - - 0.276
C
- - 40 ns
- - 65 ns
- - 80 ns
- - 15 ns
= 0V to 20V VDD = 125V,
VGS = 0V to 12V - 130 150 nC
ID = 21A
- - 260 nC
VGS = 0V to 2V - - 10 nC
-2736nC
-5876nC
= 21A, VDS = 15V - 8 - V
VDS = 25V, VGS = 0V, f = 1MHz
- 3000 - pF
- 550 - pF
- 150 - pF
- - 0.83
o
C/W
4-2
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage V Reverse Recovery Time t
SD
rr
FSYA254D, FSYA254R
ISD = 21A 0.6 - 1.8 V ISD = 21A, dISD/dt = 100A/µs - - 820 ns
Electrical Specifications up to 100K RAD T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS
Drain to Source Breakdown Volts (Note 3) BV Gate to Source Threshold Volts (Note 3) V Gate-Body Leakage (Notes 2, 3) I Zero-Gate Leakage (Note 3) I Drain to Source On-State Volts (Notes 1, 3) V Drain to Source On Resistance (Notes 1, 3) r
DS(ON)VGS
DS(ON)12VGS
DSS
GS(TH)VGS
GSS DSS
VGS = 0, ID = 1mA 250 - V
= VDS, ID = 1mA 1.5 4.0 V VGS = ±20V, VDS = 0V - 100 nA VGS = 0, VDS = 200V - 25 µA
= 12V, ID = 21A - 3.31 V
= 12V, ID = 14A - 0.150
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BV
DSS
.
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
TEST SYMBOL
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
Single Event Effects Safe Operating Area SEESOA Ni 26 43 -20 250
Br 37 36 -5 250 Br 37 36 -10 200 Br 37 36 -15 125 Br 37 36 -20 50
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
APPLIED
VGS BIAS
(V)
(NOTE 6)
MAXIMUM
VDSBIAS (V)
Typical Performance Curves
LET = 26MeV/mg/cm2, RANGE = 43µ
300
200
(V)
DS
V
100
TEMP = 25oC
0
0 -10 -15 -20 -25
LET = 37MeV/mg/cm2, RANGE = 36µ
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
-5 (V)
V
GS
Unless Otherwise Specified
1E-3
1E-4
1E-5
1E-6
LIMITING INDUCTANCE (H)
1E-7
30
DRAIN SUPPLY (V)
ILM = 10A
30A
100A
300A
30010010
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERA TINGAREA FIGURE 2. DRAIN INDUCTANCEREQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
4-3
1000
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