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FSTYC9055R
Datasheet
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Intersil Corporation FSTYC9055R, FSTYC9055D Datasheet

TM
FSTYC9055D, FSTYC9055R
Data Sheet June 2000
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.
Formerly available as type TA17750T.
File Number 4755.1
Features
• 64A, -60V, r
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Typical SEE Immunity
- LET of 36MeV/mg/cm Breakdown and V
- LET of 26MeV/mg/cm Breakdown and V
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
• Photo Current
- 6nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm
- Usable to 3E14 Neutrons/cm
DS(ON)
= 0.023Ω
2
with VDS up to 80% of Rated
of 0V
GS
2
with VDS up to 100% of Rated
of 5V Off-Bias
GS
2
2
Symbol
D
G
S
DSS
DM
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSTYC9055D1 10K TXV FSTYC9055D3 100K Commercial FSTYC9055R1 100K TXV FSTYC9055R3 100K Space FSTYC9055R4
1
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
Packaging
SMD2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
FSTYC9055D, FSTYC9055R
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
FSTYC9055D, FSTYC9055R UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
DGR
-60 V
-60 V
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
D D
DM
GS
64 A
41 A 192 A ±20 V
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T T
162 W
65 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.30 W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
AS
S
SM
L
192 A
64 A
192 A
-55 to 150 300
o
C
o
C
(Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV Gate Threshold Voltage V
DSSID
GS(TH)VGS
= 1mA, VGS = 0V -60 - - V
= VDS,
ID = 1mA
TC = -55oC - - -7.0 V TC = 25oC -2.0 - -6.0 V TC = 125oC -1.0 - - V
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
DSS
GSS
VDS = -48V, VGS = 0V
TC = 25oC--25µA TC = 125oC - - 250 µA
VGS = ±20V TC = 25oC - - 100 nA
TC = 125oC - 200 nA Drain to Source On-State Voltage V Drain to Source On Resistance r
Turn-On Delay Time t
DS(ON)VGS
DS(ON)12ID
d(ON)
Rise Time t Turn-Off Delay Time t
d(OFF)
Fall Time t Total Gate Charge Q
g(TOT)VGS
Gate Charge at 12V Q Threshold Gate Charge Q Gate Charge Source Q Gate Charge Drain Q Plateau Voltage V
(PLATEAU)ID
Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Thermal Resistance Junction to Case R
r
f
g(12)
g(TH)
gs
gd
ISS OSS RSS
JC
θ
= -12V, ID = 64A - - -1.60 V
= 41A,
VGS = -12V VDD = -30V, ID = 64A,
RL = 0.47Ω, VGS = -12V, RGS = 2.35Ω
TC = 25oC - 0.016 0.023 Ω TC = 125oC - - 0.037 Ω
- - 60 ns
- - 45 ns
- - 90 ns
- - 35 ns
= 0V to -20V VDD = -30V,
VGS = 0V to -12V - 160 190 nC
ID = 64A
- - 330 nC
VGS = 0V to -2V - - 18 nC
-5171nC
-3146nC
= 64A, VDS = -15V - -7 - V
VDS = -25V, VGS = 0V, f = 1MHz
- 7100 - pF
- 2130 - pF
- 370 - pF
- - 0.77
o
C/W
2
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage V Reverse Recovery Time t
SD
rr
FSTYC9055D, FSTYC9055R
ISD = 64A -0.6 - -1.8 V ISD = 64A, dISD/dt = 100A/µs - - 120 ns
Electrical Specifications up to 100K RAD T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS
Drain to Source Breakdown Volts (Note 3) BV Gate to Source Threshold Volts (Note 3) V Gate to Body Leakage (Notes 2, 3) I Zero Gate Leakage (Note 3) I Drain to Source On-State Volts (Notes 1, 3) V Drain to Source On Resistance (Notes 1, 3) r
DS(ON)12VGS
DSS
GS(TH)
GSS DSS
DS(ON)VGS
VGS = 0, ID = 1mA -60 - V VGS = VDS, ID = 1mA -2.0 -6.0 V VGS = ±20V, VDS = 0V - 100 nA VGS = 0, VDS = -48V - 25 µA
= -12V, ID = 64A - -1.60 V = -12V, ID = 41A - 0.023 Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BV
DSS
.
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
TEST SYMBOL
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
Single Event Effects Safe Operating Area SEESOA Ni 26 43 20 -60
Br 37 36 10 -60 Br 37 36 15 -36 Br 37 36 20 -24
NOTES:
4. Testing conducted at Brookhaven National Labs; witnessed by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
APPLIED
VGS BIAS
(V)
(NOTE 6)
MAXIMUM
VDSBIAS (V)
Performance Curves Unless Otherwise Specified
LET = 26MeV/mg/cm LET = 37MeV/mg/cm2, RANGE = 36µ
(V)
DS
V
-70
-60
-50
-40
-30
-20
-10
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
TEMP = 25oC
0
0101520 25
5
FIGURE 1. SINGLEEVENT EFFECTS SAFE OPERATINGAREA FIGURE2. DRAININDUCTANCE REQUIRED TO LIMIT
3
2
, RANGE = 43µ
1E-3
1E-4
1E-5
1E-6
LIMITING INDUCTANCE (HENRY)
1E-7
(V)
V
GS
-30 DRAIN SUPPLY (V)
GAMMA DOT CURRENT TO I
ILM = 10A
30A
100A
300A
-300-100-10
AS
-1000
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