Intersil Corporation FSTJ9055R, FSTJ9055D Datasheet
TM
FSTJ9055D, FSTJ9055R
Data Sheet June 2000
Radiation Hardened, SEGR Resistant
P-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developeda
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Immunity to Single Event Effects (SEE) is combined with
100K RADs of total dose hardness to provide devices which
are ideally suited to harsh space environments. The dose
rate and neutron tolerance necessary for military
applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
File Number 4756.1
Features
• 62A, -60V, r
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
V
up to 80% of Rated Breakdown and
DS
V
of 10V Off-Bias
GS
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
• Photo Current
- 6nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13
Neutrons/cm
- Usable to 3E14 Neutrons/cm
DS(ON)
2
= 0.023Ω
2
with
2
Symbol
D
DSS
DM
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Formerly available as type TA17750T.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSTJ9055D1
10K TXV FSTJ9055D3
100K Commercial FSTJ9055R1
100K TXV FSTJ9055R3
100K Space FSTJ9055R4
G
S
Packaging
TO-254AA
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
1
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
FSTJ9055D, FSTJ9055R
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
FSTJ9055D, FSTJ9055R UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
DGR
-60 V
-60 V
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
D
D
DM
GS
62 A
39 A
186 A
±20 V
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
T
125 W
50 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.20 W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
AS
S
SM
L
186 A
62 A
186 A
-55 to 150
300
o
C
o
C
(Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
DSSID
GS(TH)VGS
= 1mA, VGS = 0V -60 - - V
= VDS,
ID = 1mA
TC = -55oC - - -7.0 V
TC = 25oC -2.0 - -6.0 V
TC = 125oC -1.0 - - V
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
DSS
GSS
VDS = -48V,
VGS = 0V
TC = 25oC--25µA
TC = 125oC - - 250 µA
VGS = ±20V TC = 25oC - - 100 nA
TC = 125oC - 200 nA
Drain to Source On-State Voltage V
Drain to Source On Resistance r
Turn-On Delay Time t
DS(ON)VGS
DS(ON)12ID
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge Q
g(TOT)VGS
Gate Charge at 12V Q
Threshold Gate Charge Q
Gate Charge Source Q
Gate Charge Drain Q
Plateau Voltage V
(PLATEAU)ID
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
r
f
g(12)
g(TH)
gs
gd
ISS
OSS
RSS
JC
θ
= -12V, ID = 62A - - -1.55 V
= 39A,
VGS = -12V
VDD = -30V, ID = 62A,
RL = 0.48Ω, VGS = -12V,
RGS = 2.35Ω
TC = 25oC - 0.016 0.023 Ω
TC = 125oC - - 0.035 Ω
- - 50 ns
- - 120 ns
- - 100 ns
- - 40 ns
= 0V to -20V VDD = -30V,
VGS = 0V to -12V - 160 190 nC
ID = 62A
- - 330 nC
VGS = 0V to -2V - - 18 nC
-5171nC
-3146nC
= 62A, VDS = -15V - -6 - V
VDS = -25V, VGS = 0V,
f = 1MHz
- 7100 - pF
- 2130 - pF
- 370 - pF
- - 0.83
o
C/W
2
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage V
Reverse Recovery Time t
SD
rr
FSTJ9055D, FSTJ9055R
ISD = 62A -0.6 - -1.8 V
ISD = 59A, dISD/dt = 100A/µs - - 110 ns
Electrical Specifications up to 100K RAD T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS
Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r
DS(ON)12VGS
DSS
GS(TH)
GSS
DSS
DS(ON)VGS
VGS = 0, ID = 1mA -60 - V
VGS = VDS, ID = 1mA -2.0 -6.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = -48V - 25 µA
= -12V, ID = 62A - -1.55 V
= -12V, ID = 39A - 0.023 Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BV
DSS
.
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
TEST SYMBOL
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
Single Event Effects Safe Operating Area SEESOA Ni 26 43 20 -60
Br 37 36 10 -60
Br 37 36 15 -36
Br 37 36 20 -24
NOTES:
4. Testing conducted at Brookhaven National Labs; witnessed by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
APPLIED
VGS BIAS
(V)
(NOTE 6)
MAXIMUM
VDSBIAS (V)
Typical Performance Curves Unless Otherwise Specified
2
GS
(V)
, RANGE = 43m
LET = 26MeV/mg/cm
LET = 37MeV/mg/cm2, RANGE = 36m
(V)
DS
V
-70
-60
-50
-40
-30
-20
-10
0
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
TEMP = 25oC
0101520 25
5
V
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING
AREA
3
1E-3
1E-4
1E-5
1E-6
LIMITING INDUCTANCE (HENRY)
1E-7
-30
DRAIN SUPPLY (V)
ILM = 10A
30A
100A
300A
-300-100-10
FIGURE 2. DRAIN INDUCTANCE REQUIRED TOLIMIT
GAMMA DOT CURRENT TO I
AS
-1000
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