Intersil Corporation FSS913AOR, FSS913AOD Datasheet

4-1

File Number

4451.3

FSS913A0D, FSS913A0R

10A, -100V, 0.280 Ohm, Radiation
Hardened, SEGR Resistant, P-Channel
Power MOSFETs

The Discrete Products Operation of Intersil has developeda
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity toSingleEvent Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.

Formerly available as type TA17796.

Features

• 10A, -100V, r

DS(ON)

= 0.280Ω

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm

2

with VDS up

to 80% of Rated Breakdown and V

GS

of 10V Off-Bias

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

DM

• Photo Current

- 1.5nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm

2

- Usable to 3E14 Neutrons/cm

2

Symbol

Package

TO-257AA

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K Commercial FSS913A0D1
10K TXV FSS913A0D3
100K Commercial FSS913A0R1
100K TXV FSS913A0R3
100K Space FSS913A0R4

G

D

S

CAUTION: Beryllia Warning per MIL-S-19500

refer to package specifications.

G

S

D

Data Sheet June 1999

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

4-2

Absolute Maximum Ratings T

C

= 25oC, Unless Otherwise Specified

FSS913A0D, FSS913A0R UNITS

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DS

-100 V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

-100 V

Continuous Drain Current

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

10 A

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

6A

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

DM

30 A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

GS

±20 V

Maximum Power Dissipation

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

T

56 W

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

T

22 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45 W/oC

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . . I

AS

30 A

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

S

10 A

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

SM

30 A

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

-55 to 150

o

C

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

L

(Distance >0.063in (1.6mm) from Case, 10s Max)

300

o

C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications T

C

= 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 1mA, VGS = 0V -100 - - V

Gate Threshold Voltage V

GS(TH)VGS

= VDS,

ID = 1mA

TC = -55oC - - -7.0 V
TC = 25oC -2.0 - -6.0 V
TC = 125oC -1.0 - - V

Zero Gate Voltage Drain Current I

DSS

VDS = -80V,
VGS = 0V

TC = 25oC--25µA
TC = 125oC - - 250 µA

Gate to Source Leakage Current I

GSS

VGS = ±20V TC = 25oC - - 100 nA

TC = 125oC - - 200 nA

Drain to Source On-State Voltage V

DS(ON)VGS

= -12V, ID = 10A - - -3.36 V

Drain to Source On Resistance r

DS(ON)12ID

= 6A,

VGS = -12V

TC = 25oC - 0.190 0.280 Ω
TC = 125oC - - 0.500 Ω

Turn-On Delay Time t

d(ON)

VDD = -50V, ID = 10A,
RL = 5.0Ω, VGS = -12V,
RGS = 7.5Ω

- - 20 ns

Rise Time t

r

- - 55 ns

Turn-Off Delay Time t

d(OFF)

- - 45 ns

Fall Time t

f

- - 35 ns

Total Gate Charge Q

g(TOT)VGS

= 0V to -20V VDD = -50V,

ID = 10A

- - 60 nC

Gate Charge at 12V Q

g(12)

VGS = 0V to -12V - 36 40 nC

Threshold Gate Charge Q

g(TH)

VGS = 0V to -2V - - 2.5 nC

Gate Charge Source Q

gs

- 6.6 7.4 nC

Gate Charge Drain Q

gd

-1719nC

Plateau Voltage V

(PLATEAU)ID

= 10A, VDS = -15V - -7 - V

Input Capacitance C

ISS

VDS = -25V, VGS = 0V, f = 1MHz - 940 - pF

Output Capacitance C

OSS

- 320 - pF

Reverse Transfer Capacitance C

RSS

- 100 - pF

Thermal Resistance Junction to Case R

θ

JC

- - 2.2

o

C/W

Thermal Resistance Junction to Ambient R

θ

JA

--60oC/W

FSS913A0D, FSS913A0R

4-3

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V

SD

ISD = 10A -0.6 - -1.8 V

Reverse Recovery Time t

rr

ISD = 10A, dISD/dt = 100A/µs - - 160 ns

Electrical Specifications up to 100K RAD T

C

= 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

Drain to Source Breakdown Volts (Note 3) BV

DSS

VGS = 0, ID = 1mA -100 - V

Gate to Source Threshold Volts (Note 3) V

GS(TH)

VGS = VDS, ID = 1mA -2.0 -6.0 V

Gate to Body Leakage (Notes 2, 3) I

GSS

VGS = ±20V, VDS = 0V - 100 nA

Zero Gate Leakage (Note 3) I

DSS

VGS = 0, VDS = -80V - 25 µA

Drain to Source On-State Volts (Notes 1, 3) V

DS(ON)

VGS = -12V, ID = 10A - -3.36 V

Drain to Source On Resistance (Notes 1, 3) r

DS(ON)12

VGS = -12V, ID = 6A - 0.280 Ω

NOTES:

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BV

DSS

.

Single Event Effects (SEB, SEGR) (Note 4)

TEST SYMBOL

ENVIRONMENT (NOTE 5)

APPLIED

VGS BIAS

(V)

(NOTE 6)

MAXIMUM

VDSBIAS (V)

ION

SPECIES

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (µ)

Single Event Effects Safe Operating Area SEESOA Ni 26 43 20 -100

Br 37 36 10 -100
Br 37 36 15 -80
Br 37 36 20 -50

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

Typical Performance Curves

Unless Otherwise Specified

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TOLIMIT

GAMMA DOT CURRENT TO I

AS

-120

-100

-80

-60

-40

-20

0

0101520255

V

DS

(V)

LET = 37MeV/mg/cm2, RANGE = 36µ

FLUENCE = 1E5 IONS/cm2 (TYPICAL)

TEMP = 25oC

LET = 26MeV/mg/cm2, RANGE = 43µ

V

GS

(V)

-300-100-10

LIMITING INDUCTANCE (HENRY)

DRAIN SUPPLY (V)

-1000

ILM = 10A

300A

1E-4

1E-5

1E-6

-30

100A

30A

1E-3

1E-7

FSS913A0D, FSS913A0R