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FSS913A0D, FSS913A0R
Data Sheet June 1999
10A, -100V, 0.280 Ohm, Radiation
Hardened, SEGR Resistant, P-Channel
Power MOSFETs
The Discrete Products Operation of Intersil has developeda
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity toSingleEvent Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
File Number
4451.3
Features
• 10A, -100V, r
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
to 80% of Rated Breakdown and V
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
• Photo Current
- 1.5nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm
- Usable to 3E14 Neutrons/cm
DS(ON)
= 0.280Ω
2
with VDS up
of 10V Off-Bias
GS
DSS
DM
2
Symbol
D
G
S
2
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSS913A0D1
10K TXV FSS913A0D3
100K Commercial FSS913A0R1
100K TXV FSS913A0R3
100K Space FSS913A0R4
Formerly available as type TA17796.
4-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Package
TO-257AA
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
http://www.intersil.com or 407-727-9207
S
D
G
| Copyright © Intersil Corporation 1999
FSS913A0D, FSS913A0R
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
FSS913A0D, FSS913A0R UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
DGR
-100 V
-100 V
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
D
D
DM
GS
10 A
6A
30 A
±20 V
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
T
56 W
22 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45 W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
AS
S
SM
L
30 A
10 A
30 A
-55 to 150
300
o
C
o
C
(Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
DSSID
GS(TH)VGS
= 1mA, VGS = 0V -100 - - V
= VDS,
ID = 1mA
TC = -55oC - - -7.0 V
TC = 25oC -2.0 - -6.0 V
TC = 125oC -1.0 - - V
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
DSS
GSS
VDS = -80V,
VGS = 0V
TC = 25oC--25µA
TC = 125oC - - 250 µA
VGS = ±20V TC = 25oC - - 100 nA
TC = 125oC - - 200 nA
Drain to Source On-State Voltage V
Drain to Source On Resistance r
Turn-On Delay Time t
DS(ON)VGS
DS(ON)12ID
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge Q
g(TOT)VGS
Gate Charge at 12V Q
Threshold Gate Charge Q
Gate Charge Source Q
Gate Charge Drain Q
Plateau Voltage V
(PLATEAU)ID
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
r
f
g(12)
g(TH)
gs
gd
ISS
OSS
RSS
JC
θ
JA
θ
= -12V, ID = 10A - - -3.36 V
= 6A,
VGS = -12V
VDD = -50V, ID = 10A,
RL = 5.0Ω, VGS = -12V,
RGS = 7.5Ω
TC = 25oC - 0.190 0.280 Ω
TC = 125oC - - 0.500 Ω
- - 20 ns
- - 55 ns
- - 45 ns
- - 35 ns
= 0V to -20V VDD = -50V,
VGS = 0V to -12V - 36 40 nC
ID = 10A
- - 60 nC
VGS = 0V to -2V - - 2.5 nC
- 6.6 7.4 nC
-1719nC
= 10A, VDS = -15V - -7 - V
VDS = -25V, VGS = 0V, f = 1MHz - 940 - pF
- 320 - pF
- 100 - pF
- - 2.2
o
C/W
--60oC/W
4-2
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage V
Reverse Recovery Time t
SD
rr
FSS913A0D, FSS913A0R
ISD = 10A -0.6 - -1.8 V
ISD = 10A, dISD/dt = 100A/µs - - 160 ns
Electrical Specifications up to 100K RAD T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS
Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
GS(TH)
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r
DS(ON)
DS(ON)12
DSS
GSS
DSS
VGS = 0, ID = 1mA -100 - V
VGS = VDS, ID = 1mA -2.0 -6.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = -80V - 25 µA
VGS = -12V, ID = 10A - -3.36 V
VGS = -12V, ID = 6A - 0.280 Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BV
DSS
.
Single Event Effects (SEB, SEGR) (Note 4)
ENVIRONMENT (NOTE 5)
TEST SYMBOL
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
Single Event Effects Safe Operating Area SEESOA Ni 26 43 20 -100
Br 37 36 10 -100
Br 37 36 15 -80
Br 37 36 20 -50
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
APPLIED
VGS BIAS
(V)
(NOTE 6)
MAXIMUM
VDSBIAS (V)
Typical Performance Curves
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ
V
(V)
GS
(V)
DS
V
-120
-100
-80
-60
-40
-20
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
TEMP = 25oC
0
0101520255
Unless Otherwise Specified
LIMITING INDUCTANCE (HENRY)
1E-3
1E-4
1E-5
1E-6
1E-7
-30
DRAIN SUPPLY (V)
ILM = 10A
30A
100A
300A
-300-100-10
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TOLIMIT
GAMMA DOT CURRENT TO I
AS
4-3
-1000