Intersil Corporation FSR1110R, FSR1110D Datasheet

FSR1110D, FSR1110R

Data Sheet March 2000

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developeda series of Radiation Hardened MOSFETs speciﬁcally designed for commercial and military space applications. Enhanced Power MOSFET immunity toSingleEvent Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacriﬁced.

The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power ﬁeld-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.

File Number 4828.1

Features

• 1.0A, 100V, r

• Contains Four Isolated and Independent N-Channel MOSFETs

• Total Dose

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm

up to 80% of Rated Breakdown and

of 10V Off-Bias

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 0.3nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

DS(ON)

= 0.680Ω

with

DSS

Packaging

14 PIN DIP

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K Commercial FSR1110D1 100K TXV FSR1110R3 100K Space FSR1110R4

Formerly available as type TA45032.

Symbol

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Pinout

1 2

1-888-INTERSIL or 321-724-7143

14 13

FSR1110D, FSR1110R

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Speciﬁed

FSR1110D, FSR1110R UNITS

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

100 V 100 V

Continuous Drain Current

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

D D

1.0 A

0.6 A

3.0 A

±20 V

Maximum Power Dissipation

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

T T

1.25 W

0.5 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.01 W/oC

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

3.0 A

1.0 A

3.0 A

-55 to 150 300

(Distance >0.063in (1.6mm) from Case, 10s Max)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV Gate Threshold Voltage V

DSSID

GS(TH)VGS

= 1mA, VGS = 0V 100 - - V

= VDS,

ID = 1mA

TC = -55oC - - 5.0 V TC = 25oC 1.5 - 4.0 V TC = 125oC 0.5 - - V

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

DSS

GSS

VDS = 80V, VGS = 0V

TC = 25oC--25µA TC = 125oC - - 250 µA

VGS = ±20V TC = 25oC - - 100 nA

TC = 125oC - - 200 nA Drain to Source On-State Voltage V Drain to Source On Resistance r

Turn-On Delay Time t

DS(ON)VGS

DS(ON)12ID

d(ON)

Rise Time t Turn-Off Delay Time t

d(OFF)

Fall Time t Total Gate Charge Q

g(TOT)VGS

Gate Charge at 12V Q Threshold Gate Charge Q Gate Charge Source Q Gate Charge Drain Q Plateau Voltage V

(PLATEAU)ID

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Thermal Resistance Junction to Ambient R

g(12)

g(TH)

ISS OSS RSS

= 12V, ID = 1.0A - - 0.71 V

= 0.6A,

VGS = 12V

VDD = 50V, ID = 1.0A, RL = 50Ω, VGS = 12V, RGS = 7.5Ω

TC = 25oC - 0.570 0.680 Ω TC = 125oC - - 1.09 Ω

- - 15 ns

- - 25 ns

- - 20 ns

= 0V to 20V VDD = 50V,

VGS = 0V to 12V - 8.7 9.7 nC

ID = 1.0A

- - 14 nC

VGS = 0V to 2V - - 0.54 nC

- 1.4 1.7 nC

- 4.2 4.7 nC

= 1.0A, VDS = 15V - 6 - V

VDS = 25V, VGS = 0V, f = 1MHz

- 155 - pF

-70-pF

-20-pF

- - 100

C/W

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V Reverse Recovery Time t

FSR1110D, FSR1110R

ISD = 1.0A 0.6 - 1.8 V ISD = 1.0A, dISD/dt = 100A/µs - - 110 ns

Electrical Speciﬁcations up to 100K RAD T

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

Drain to Source Breakdown Volts (Note 3) BV Gate to Source Threshold Volts (Note 3) V Gate to Body Leakage (Notes 2, 3) I Zero Gate Leakage (Note 3) I Drain to Source On-State Volts (Notes 1, 3) V Drain to Source On Resistance (Notes 1, 3) r

NOTES:

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BV

= 25oC, Unless Otherwise Speciﬁed

DSS

GS(TH)VGS

GSS DSS

DS(ON)VGS

DS(ON)12VGS

VGS = 0, ID = 1mA 100 - V

= VDS, ID = 1mA 1.5 4.0 V VGS = ±20V, VDS = 0V - 100 nA VGS = 0, VDS = 80V - 25 µA

= 12V, ID = 1.0A - 0.710 V

= 12V, ID = 0.6A - 0.680 Ω

DSS

Single Event Effects (SEB, SEGR) Note 4

ENVIRONMENT (NOTE 5)

ION

TEST SYMBOL

Single Event Effects Safe Operating Area SEESOA Ni 28 43 -20 100

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

SPECIES

Br 37 36 -10 100 Br 37 36 -15 80 Br 37 36 -20 50

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (µ)

APPLIED

VGS BIAS

(V)

(NOTE 6)

MAXIMUM

VDSBIAS (V)

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