Intersil Corporation FSPYE234R, FSPYE234F Datasheet
TM
FSPYE234R, FSPYE234F
Data Sheet June 2000
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Intersil Star*Power Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment.
Star*Power MOSFETs offer the system designer both
extremely low r
development of low loss Power Subsystems. Star*Power
FETs combine this electrical capability with total dose
radiation hardness up to 300K RADs while maintaining the
guaranteed performance for Single Event Effects (SEE)
which the Intersil FS families have always featured.
The Intersil portfolio of Star*PowerFETsincludesafamily of
devices in various voltage, current and package styles. The
Star*Power family consists of Star*Power and Star*Power
Gold products.Star*Power FETsareoptimized for total dose
and r
performance while exhibiting SEE capability at
DS(ON)
full rated voltage up to an LET of 37. Star*Power Gold FETs
have been optimized for SEE and Gate Charge providing
SEE performance to 80% of the rated voltage for an LET of
82 with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV or Space
equivalent of MIL-S-19500.
and Gate Charge allowing the
DS(ON)
File Number 4873
Features
• 9A, 250V, r
• UIS Rated
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
V
up to 100% of Rated Breakdown and
DS
V
of 10V Off-Bias
GS
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
• Photo Current
- 4.0nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
- Usable to 1E14 Neutrons/cm
DS(ON)
= 0.215Ω
2
2
with
2
Symbol
D
G
S
Packaging
SMD.5
DSS
AS
Formerly available as type TA45216W.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Engineering samples FSPYE234D1
100K TXV FSPYE234R3
100K Space FSPYE234R4
300K TXV FSPYE234F3
300K Space FSPYE234F4
1
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
FSPYE234R, FSPYE234F
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
FSPYE234R, FSPYE234F UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
DGR
250 V
250 V
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
D
D
DM
GS
9A
6A
32 A
±30 V
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
T
42 W
17 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.33 W/oC
Single Pulsed Avalanche Current, L = 100µH (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
AS
S
SM
L
30 A
9A
32 A
-55 to 150
300
o
C
o
C
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) 1.0 (Typical) g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
DSSID
GS(TH)VGS
= 1mA, VGS = 0V 250 - - V
= VDS,
ID = 1mA
TC = -55oC - - 5.5 V
TC = 25oC 2.0 - 4.5 V
TC = 125oC 1.0 - - V
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
DSS
GSS
VDS = 200V,
VGS = 0V
TC = 25oC--25µA
TC = 125oC - - 250 µA
VGS = ±30V TC = 25oC - - 100 nA
TC = 125oC - - 200 nA
Drain to Source On-State Voltage V
Drain to Source On Resistance r
Turn-On Delay Time t
DS(ON)VGS
DS(ON)12ID
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge Q
Gate Charge Source Q
Gate Charge Drain Q
Gate Charge at 20V Q
Threshold Gate Charge Q
Plateau Voltage V
(PLATEAU)ID
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
r
f
g(12)
gs
gd
g(20)
g(TH)
ISS
OSS
RSS
JC
θ
= 12V, ID = 9A - - 1.98 V
= 6A,
VGS = 12V
VDD = 125V, ID = 9A,
RL = 13.9Ω, VGS = 12V,
RGS = 7.5Ω
TC = 25oC - 0.185 0.215 Ω
TC = 125oC - - 0.413 Ω
- - 20 ns
- - 25 ns
- - 30 ns
- - 15 ns
VGS = 0V to 12V VDD = 125V,
ID = 9A
-3033nC
-1012nC
- 8 10 nC
VGS = 0V to 20V - 45 - nC
VGS = 0V to 2V - 3 - nC
= 9A, VDS = 15V - 6.5 - V
VDS = 25V, VGS = 0V,
f = 1MHz
- 1400 - pF
- 200 - pF
-8-pF
- - 3.0
o
C/W
2
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
SD
rr
RR
FSPYE234R, FSPYE234F
ISD = 9A - - 1.2 V
ISD = 9A, dISD/dt = 100A/µs - - 310 ns
- 1.9 - µC
Electrical Specifications up to 300K RAD T
= 25oC, Unless Otherwise Specified
C
MIN MAX MIN MAX
PARAMETER SYMBOL TEST CONDITIONS
Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r
DS(ON)12VGS
GS(TH)VGS
GSS
DSS
DS(ON)VGS
VGS = 0, ID = 1mA 250 - - - V
DSS
= VDS, ID = 1mA 2.0 4.5 1.5 4.5 V
VGS = ±30V, VDS = 0V - 100 100 nA
VGS = 0, VDS = 200V - 25 50 µA
= 12V, ID = 9A - 1.98 - 2.97 V
= 12V, ID = 6A - 0.215 - 0.270 Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BV
DSS
.
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
TEST SYMBOL
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
Single Event Effects Safe Operating Area SEESOA Br 37 36 -10 250
Br 37 36 -15 200
I 60 32 -2 200
I 60 32 -8 150
Au 82 28 0 150
Au 82 28 -5 100
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
APPLIED
VGS BIAS
(V)
(NOTE 6)
MAXIMUM
VDSBIAS (V)ION SPECIES
UNITS100K RAD 300K RAD
Performance Curves Unless Otherwise Specified
LET = 37MeV/mg/cm
LET = 60MeV/mg/cm2, RANGE = 32µ
LET = 82MeV/mg/cm
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
280
240
200
(V)
160
DS
V
120
80
40
0
0 -20
-4 -8 -12
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. TYPICAL SEE SIGNATURE CURVE
3
2
, RANGE = 36µ
2
, RANGE = 28µ
TEMP = 25oC
V
(V)
GS
-16
(V)
DS
V
280
240
200
160
120
80
40
0
LET = 37 BROMINE
LET = 82 GOLD
LET = 60 IODINE
VGS (V)
-300 -5 -10 -15 -20 -25
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