Intersil Corporation FSPS230F, FSPS230R Datasheet

TM

FSPS230R, FSPS230F

Data Sheet May 2000

Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs

Intersil Star*Power™ Rad Hard
MOSFETs have been specifically
developed for high performance

applications in a commercial or
military space environment. Star*Power MOSFETs offer the
system designer both extremely low r
Charge allowing the development of low loss Power
Subsystems. Star*Power FETs combine this electrical
capability with total dose radiation hardness up to 300K
RADs while maintaining the guaranteed performance for
SEE (Single Event Effects) which the Intersil FS families
have always featured.

The Intersil portfolio of Star*PowerFETsincludesafamily of
devices in various voltage, current and package styles. The
Star*Power family consists of Star*Power and Star*Power
Gold products.Star*Power FETsareoptimized for total dose
and r

performance while exhibiting SEE capability at

DS(ON)

full rated voltage up to an LET of 37. Star*Power Gold FETs
have been optimized for SEE and Gate Charge providing
SEE performance to 80% of the rated voltage for an LET of
82 with extremely low gate charge characteristics.

This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.

Reliability screening is available as either TXV or Space
equivalent of MIL-S-19500.

DS(ON)

and Gate

File Number 4866

Features

• 14A, 200V, r

• UIS Rated

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

- Rated to 300K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm
V

up to 100% of Rated Breakdown and

DS

V

of 10V Off-Bias

GS

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 3.0nA Per-RAD (Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

DS(ON)

= 0.145Ω

2

2

with

2

Symbol

D

G

S

Packaging

TO-257AA

S

D

G

DSS

AS

Formerly available as type TA45210W.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K Engineering Samples FSPS230D1
100K TXV FSPS230R3
100K Space FSPS230R4
300K TXV FSPS230F3
300K Space FSPS230F4

1

1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000

CAUTION: Beryllia Warning per MIL-S-19500

refer to package specifications.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

Star*Power™ is a trademark of Intersil Corporation.

FSPS230R, FSPS230F

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

FSPS230R, FSPS230F UNITS

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DS

DGR

200 V
200 V

Continuous Drain Current

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

D
D

DM

GS

14 A

9A

40 A

±30 V

Maximum Power Dissipation

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T
T

56 W
22 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45 W/oC

Single Pulsed Avalanche Current, L = 100µH (See Test Figure). . . . . . . . . . . . . . . . . . . . . . .I

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

AS

S

SM

L

36 A
14 A
40 A

-55 to 150
300

o

C

o

C

(Distance >0.063in (1.6mm) from Case, 10s Max)

Weight (Typical) 4.4 (Typical) g

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

DSSID

GS(TH)VGS

= 1mA, VGS = 0V 200 - - V

= VDS,

ID = 1mA

TC = -55oC - - 5.5 V
TC = 25oC 2.0 - 4.5 V
TC = 125oC 1.0 - - V

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

DSS

GSS

VDS = 160V,
VGS = 0V

TC = 25oC--25µA
TC = 125oC - - 250 µA

VGS = ±30V TC = 25oC - - 100 nA

TC = 125oC - - 200 nA
Drain to Source On-State Voltage V
Drain to Source On Resistance r

Turn-On Delay Time t

DS(ON)VGS

DS(ON)12ID

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge Q
Gate Charge Source Q
Gate Charge Drain Q
Gate Charge at 20V Q
Threshold Gate Charge Q
Plateau Voltage V

(PLATEAU)ID

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R

r

f

g(12)

gs

gd

g(20)

g(TH)

ISS
OSS
RSS

JC

θ

= 12V, ID = 14A - - 2.17 V

= 9A,

VGS = 12V
VDD = 100V, ID = 14A,

RL = 7.1Ω, VGS = 12V,
RGS = 7.5Ω

TC = 25oC - 0.125 0.145 Ω
TC = 125oC - - 0.290 Ω

- - 20 ns

- - 40 ns

- - 35 ns

- - 15 ns

VGS = 0V to 12V VDD = 100V,

ID = 14A

-3033nC

-1012nC

- 8 10 nC
VGS = 0V to 20V - 45 - nC
VGS = 0V to 2V - 3 - nC

= 14A, VDS = 15V - 6.5 - V

VDS = 25V, VGS = 0V,
f = 1MHz

- 1400 - pF

- 230 - pF

-8-pF

- - 2.2

o

C/W

2

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

SD

rr

RR

FSPS230R, FSPS230F

ISD = 14A - - 1.2 V
ISD = 14A, dISD/dt = 100A/µs - - 220 ns

- 1.5 - µC

Electrical Specifications up to 300K RAD T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS

100K RAD 300K RAD

Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r

DS(ON)12VGS

GS(TH)VGS

GSS
DSS

DS(ON)VGS

VGS = 0, ID = 1mA 200 - 200 V

DSS

= VDS, ID = 1mA 2.0 4.5 1.5 4.5 V
VGS = ±30V, VDS = 0V - 100 100 nA
VGS = 0, VDS = 160V - 25 50 µA

= 12V, ID = 14A - 2.17 2.38 V

= 12V, ID = 9A - 0.145 0.160 Ω

NOTES:

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BV

DSS

.

Single Event Effects (SEB, SEGR) Note 4

SYMBOL ENVIRONMENT (NOTE 5)

TEST

ION

SPECIES

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (µ)

Single Event Effects Safe Operating Area SEESOA Br 37 36 -10 200

Br 37 36 -15 160

I 60 32 -2 200

I 60 32 -8 160
Au 82 28 0 160
Au 82 28 -5 120

NOTES:

4. Testing conducted at Brookhaven National Labs.

5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

APPLIED

VGS BIAS

(V)

(NOTE 6)

MAXIMUM

VDSBIAS (V)

Performance Curves Unless Otherwise Specified

GS

2

2

(V)

, RANGE = 36µ

, RANGE = 28µ

TEMP = 25oC

LET = 37MeV/mg/cm
LET = 60MeV/mg/cm2, RANGE = 32µ
LET = 82MeV/mg/cm

240

200

160

(V)

120

DS

V

80

40

0

0 -20

FLUENCE = 1E5 IONS/cm2 (TYPICAL)

-4 -8 -12 -16
V

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA

3

240

LET = 37 BROMINE

200

160

DS

120

V

80

LET = 82 GOLD

40

LET = 60 IODINE

0

V

GS

FIGURE 2. TYPICAL SEE SIGNATURE CURVE

-300 -5 -10 -15 -20 -25